Rohm MP6T11 Midium power transistors (-30v / -1a) Datasheet

Midium Power Transistors (-30V / -1A)
MP6T11
 Structure
PNP Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
MPT6
(Dual)
 Features
Low saturation voltage
V CE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
 Applications
Low Frequency Amplifier
Driver
 Packaging specifications
Type
Emitter
Base
Collector
Emitter
Base
Collector
(6)
(5)
(4)
(1)
(2)
(3)
 Inner circuit (Unit : mm)
Package
MPT6
Code
TR
Basic ordering unit (pieces) 1000
(6)
(5)
(4)
Tr.2
Tr.1
Absolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr.1 and Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
Limits
-30
-30
VCEO
VEBO
-6
IC
-1
ICP *1
-2
*2
PD
2.0
1.4
PD *2
Tj
150
Tstg
-55 to 150
Unit
V
V
V
A
A
W/Total
W/Element
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
(1)
(2)
(3)
C
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board
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1/5
2010.12 - Rev.A
MP6T11
Data Sheet
Electrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr.1 and Tr.2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
-30
-
-
V
IC= -1mA
Collector-base breakdown voltage
BVCBO
-30
-
-
V
IC= -10μA
Emitter-base breakdown voltage
Parameter
Conditions
BVEBO
-6
-
-
V
IE= -10μA
Collector cut-off current
ICBO
-
-
-100
nA
VCB= -30V
Emitter cut-off current
IEBO
-
-
-100
nA
VEB= -6V
VCE(sat)
-
-150
-350
mV IC= -500mA, I B= -25mA
hFE
270
-
680
-
VCE= -2V, I C= -100mA
fT
-
320
-
MHz
VCE= -2V
IE=100mA, f=100MHz
Cob
-
7
-
pF
Turn-on time
ton *
-
60
-
ns
Storage time
tstg *
-
160
-
ns
tf *
-
50
-
ns
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Fall time
VCB= -10V, I E=0A
f=1MHz
IC= -500mA, I B1= -25mA,
_ -5V
IB2=25mA, VCC ~
* See switching time test circuit
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2/5
2010.12 - Rev.A
Data Sheet
MP6T11
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics
-5.0mA -4.0mA
Fig.2 DC Current Gain vs. Collector Current(Ⅰ)
-3.0mA
-0.50
1000
-0.45
-0.40
-1.5mA
DC CURRENT GAIN :hFE
COLLECTOR CURRENT :IC[A]
Ta=25°C
-2.0mA
-0.35
-0.30
-1.0mA
-0.25
-0.20
-0.15
VCE=-5V
-2V
100
IB=-0.5mA
-0.10
-0.05
Ta=25°C
0.00
10
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-1
-10
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Fig.3 DC Current Gain vs. Collector Current(Ⅱ)
1000
-10
COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
DC CURRENT GAIN :hFE
-1000
COLLECTOR CURRENT :IC[mA]
COLECTOR TO EMITTER VOLTAGE:VCE[V]
Ta=125°C
75°C
25°C
-40°C
100
VCE=-2V
Pulsed
Ta=25°C
Pulsed
-1
IC/IB=50
20
10
-0.1
-0.01
10
-1
-10
-100
-1
-1000
-10
-100
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ)
Fig.6 Ground Emitter Propagation Characteristics
-1000
-1000
-1
VCE=-2V
Pulsed
COLLECTOR CURRENT :IC[mA]
COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
-100
-0.1
Ta=125°C
75°C
25°C
-40°C
IC/IB=20
Pulsed
Ta=125°C
75°C
25°C
-40°C
-100
-10
-1
-0.01
-1
-10
-100
0
-1000
COLLECTOR CURRENT :IC[mA]
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-0.5
-1
-1.5
BASE TO EMITTER VOLTAGE :VBE[V]
3/5
2010.12 - Rev.A
Data Sheet
MP6T11
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs.Collector-Base Voltage
Fig8. Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
f=1MHz
IC=0A
Cib
TRANSITION FREQUENCY : fT [MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
100
10
Cob
100
Ta=25°C
VCE=-2V
f=100MHz
1
10
-0.1
-1
-10
-100
10
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
100
1000
EMITTER CURRENT :IE[mA]
Fig9. SAFE OPERATING AREA
-10
COLLECTOR CURRENT : IC (A)
1ms
10ms
-1
100ms
-0.1
DC
(Mounted on a ceramic board)
-0.01
Ta=25°C
When one element operated
Single non repetitive pulse
-0.001
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.12 - Rev.A
MP6T11
Data Sheet
 Switching time test circuit
RL=10Ω
VIN
IB1
IC
Pw
VCC
_ -5V
~
IB2
_ 50μs
Pw ~
DUTY CYCLE≦1%
IB2
BASE CURENT WAVEFORM
IB1
ton
tstg
tf
90%
COLLECTOR CURRENT WAVEFORM
IC
10%
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5/5
2010.12 - Rev.A
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R1010A
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