LRC L2SD2114KVLT1G Epitaxial planar type npn silicon transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
L2SD2114K*LT1
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
3
1
2
SOT– 23 (TO–236AB)
4) Pb-Free package is available.
COLLECTOR
3
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
25
V
1
Collector-emitter voltage
VCEO
20
V
BASE
Emitter-base voltage
VEBO
12
V
Collector current
IC
Collector power
dissipation
PC
0.5
A(DC)
1
A(Pulse)
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55∼+150
°C
2
EMITTER
∗
∗ Single pulse Pw=100ms
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
25
−
−
V
IC=10µA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
12
−
−
V
IE=10µA
ICBO
−
−
0.5
µA
VCB=20V
Parameter
Collector cutoff current
Conditions
IEBO
−
−
0.5
µA
VEB=10V
VCE(sat)
−
0.18
0.4
V
IC/IB=500mA/20mA
hFE
820
−
2700
−
VCE=3V, IC=10mA
fT ∗
−
350
−
MHz
Output capacitance
Cob
−
8.0
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.8
−
pF
IB=1mA, Vi=100mV(rms), f=1kHz
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE=10V, IE=−50mA, f=100MHz
∗ Measured using pulse current
ƽ h FE
Values Classification, Device Marking and Ordering Information
Device
hFE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV
3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW
3000/Tape&Reel
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1G
L2SD2114K*LT1–1/4
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1
zElectrical characteristic curves
1.4µA
1.8µA
1.2µA
1.2
1.0µA
0.8µA
0.8
0.6µA
0.4µA
0.4
0.2µA
IB=0
0
0
0.1
0.2
0.3
0.4
DC CURRENT GAIN : hFE
2000
1000
500
3V
1V
200
100
50
400
0.4mA
0.2mA
200
VCE=3V
Measured using
pulse current.
2000
1000
Ta=100°C
25°C
−25°C
500
200
100
50
20
1
2
5
10 20
10
50 100 200 500 1000
1
IC/IB=25
Measured using
pulse current.
1000
500
200
100
Ta=100°C
25°C
−25°C
50
20
10
5
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current(ΙΙ)
5
10 20
50 100 200
500 1000
Fig.5 DC current gain vs.
collector current(ΙΙ)
BASE SATURATION VOLTAGE : VBE(sat)(mV)
2000
2
10000
Ta=25°C
Pulsed
5000
IC/IB=10
25
50
100
2000
1000
500
200
100
50
20
10
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current(Ι)
Ta=100°C
25°C
−25°C
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Grounded emitter propagation
characteristics
2000
Ta=25°C
Measured using
pulse current.
1000
500
200
100
50
IC/IB=100
50
25
20
10
10
5
2
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC(mA)
Fig.4 DC current gain vs. collector
current(Ι)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
2
5000
COLLECTOR CURRENT : IC(mA)
2
Ta=25°C
Measured using
IB=0mA pulse current.
4
6
8
10
10000
20
10
0.6mA
Fig.2 Grounded emitter output
characteristics(ΙΙ)
DC CURRENT GAIN : hFE
Ta=25°C
Measured using
pulse current.
VCE=5V
0.8mA
600
VCE=3V
Measured using
pulse current.
500
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics(Ι)
5000
1.2mA
1.0mA
0
0
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
10000
800
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
2.0µA
1.6
1000
1.8mA 2.0mA
1.6mA
1.4mA
Fig.6 Collector-emitter saturation
voltage vs. collector current(Ι)
BASE SATURATION VOLTAGE : VBE(sat) (mV)
1.6µA
COLLECTOR CURRENT : IC(mA)
1000
Ta=25˚C
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC(mA)
2.0
10000
lC/lB=10
Measured using
pulse current.
5000
Ta=−25°C
25°C
100°C
2000
1000
500
200
100
50
20
10
1
2
5 10
20
50 100 200
5001000
COLLECTOR CURRENT : IC(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current(ΙΙ)
L2SD2114K*LT1-2/4
LESHAN RADIO COMPANY, LTD.
Ta=25°C
VCE=10V
Measured using
pulse current.
5000
2000
1000
500
200
100
50
20
10
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
1000
Ta=25°C
f=1MHz
IE=0A
500
200
100
50
20
10
5
2
0.5 1
2
5
10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.10 Gain bandwidth product vs.
emitter current
Ta=25°C
f=1kHz
Vi=100mV(rms)
RL=1kΩ
50
20
10
5
2
1
0.5
0.2
1
0.1 0.2
EMITTER CURRENT : IE(mA)
100
ON RESISTANCE : Ron(Ω)
TRANSITION FREQUENCY : fT (MHz)
10000
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
L2SD2114K*LT1
Fig.11 Collector output capacitance
vs. collector-base voltage
0.1
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
BASE CURRENT : IB(mA)
Fig.12 Output-on resistance vs.
base current
zRon measurement circuit
RL=1kΩ
Input
vi
1kHz
100mV(rms)
IB
V Output
v0
Ron=
v0
vi−v0
×RL
L2SD2114K*LT1-3/4
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
L2SD2114K*LT1-4/4
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