APTM10SKM02G VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Buck chopper MOSFET Power Module Application Q1 • • OUT Features • S1 CR2 0/VBUS • • • G1 VBUS 0/VBUS OUT S1 Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 495 370 1900 ±30 2.5 1250 100 50 3000 Unit V A V mΩ W A July, 2006 G1 AC and DC motor control Switched Mode Power Supplies mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10SKM02G– Rev 1 VBUS APTM10SKM02G All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min Tj = 25°C Tj = 125°C VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min IRM IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit Max Unit Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 400A R G = 1.25Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 400A, R G =1.25Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 400A, R G = 1.25Ω Test Conditions nC 160 240 500 ns 160 2.2 mJ 2.41 2.43 mJ 2.56 Min Typ Max IF = 400A VR = 133V di/dt =800A/µs 750 1000 Tj = 125°C 400 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 800 Tj = 125°C 3360 www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 400A IF = 800A IF = 400A mΩ V nA nF 200 VR=200V µA 720 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 40 15.7 5.9 1360 Max 400 2000 2.5 4 ±400 240 Chopper diode ratings and characteristics VRRM 2.25 2 VGS = 10V VBus = 50V ID = 400A Symbol Characteristic Typ µA A V ns July, 2006 Symbol nC 2-6 APTM10SKM02G– Rev 1 Electrical Characteristics APTM10SKM02G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.14 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10SKM02G– Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM10SKM02G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 V GS=15V, 10V & 9V 2000 ID, Drain Current (A) 1500 8V 1000 7V 6V 500 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 160 T J=25°C 80 0 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 200A 1.1 VGS =10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 500 RDS(on) vs Drain Current ID, DC Drain Current (A) 400 300 200 100 0.8 0 0 100 200 300 400 500 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4-6 APTM10SKM02G– Rev 1 ID, Drain Current (A) 2500 APTM10SKM02G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 200A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 100µs limited by RDSon 1000 1ms 100 0.6 10ms Single pulse TJ=150°C TC=25°C 10 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 Crss 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=400A TJ=25°C 14 V DS =20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 400 800 1200 1600 2000 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 5-6 APTM10SKM02G– Rev 1 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10SKM02G Delay Times vs Current Rise and Fall times vs Current 300 600 250 400 t d(off) VDS=66V RG=1.25Ω T J=125°C L=100µH 300 200 t r and tf (ns) t d(on) and td(off) (ns) 500 td(on) 200 tf 150 VDS=66V RG=1.25Ω T J=125°C L=100µH 100 50 100 0 0 50 150 250 350 450 550 I D, Drain Current (A) 650 50 250 350 450 550 ID, Drain Current (A) 650 9 VDS=66V RG=1.25Ω TJ=125°C L=100µH 3 Switching Energy (mJ) 4 E off Eon 2 1 Eoff 0 V DS =66V ID=400A T J=125°C L=100µH 8 7 6 Eoff 5 4 Eon 3 2 1 50 150 250 350 450 550 650 0 2.5 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 30 20 ZVS 10 0 100 VDS=66V D=50% RG=1.25Ω T J=125°C T C=75°C 200 Hard switching 300 400 7.5 10 12.5 15 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 50 40 5 Gate Resistance (Ohms) 60 Frequency (kHz) 150 Switching Energy vs Gate Resistance Switching Energy vs Current 5 Eon and Eoff (mJ) tr 1000 TJ=150°C 100 TJ=25°C 10 500 ID, Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10SKM02G– Rev 1 July, 2006 VSD, Source to Drain Voltage (V)