Marktech LSF872C1S Infrared emitting diode Datasheet

LSF872C1S
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
CONDITIONS
ITEM
SYMBOL
IF=50mA
Power Output
PO
IF=50mA
Forward Voltage
VF
VR=5V
Reverse Current
IR
Peak Wavelength
λp IF=50mA
Spectral Line Half Width
Δλ IF=50mA
IF=50mA
Half Intensity Beam Angle
θ
Junction Capacitance
Cj
1MHz ,V=0V
Temp. Coefficient of PO
IF=10mA
P/T
Temp. Coefficient of VF
IF=10mA
V/T
120
80
60
40
20
0
0
1
2
200
150
100
50
0
3
0
FORWARD VOLTAGE(V)
OPTRANS
100
40
20
0
770
870
WAVELENGTH(nm)
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
970
RELATIVE POWER OUTPUT(%)
60
100
80
60
40
20
0
-30
100
125
0
30
60
60
40
20
0
-90
-60
-30
0
30
60
90
BEAM ANGLE(deg.)
140
120
80
75
80
POWER OUTPUT vs TEMPERATURE
IF=10mA
THERMAL DERATING CURVE
FORWARD CURRENT(mA)
RELATIVE POWER OUTPUT(%)
UNIT
mA
A
V
mW
℃
℃
℃
℃
50
100
FORWARD CURRENT(mA)
120
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
ITEM
RATINGS
SYMBOL
Forward Current (DC)
60
IF
Forward Current (Pulse)*1
0.5
IFP
5
Reverse Voltage
VR
100
Power Dissipation
PD
Operating Temp.
Topr
-20 TO 85
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
100
Tj
Lead Soldering Temp.*2
260
Tls
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
25
1.6
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
120
FORWARD VOLTAGE(V)
SPECTRAL OUTPUT
UNIT
mW
V
μA
nm
nm
deg.
pF
%/℃
mV/℃
RADIATION PATTERN
RELATIVE POWER OUTPUT(%)
100
MAX
20.0
2.0
10
120
250
RELATIVE POWER OUTPUT(%)
FORWARD CURRENT(mA)
① Anode
② Cathode
Dimensions (Unit:mm)
・High-output Power
・Compact
・High Reliability
APPLICATIONS ・Optical Switches
・Optical Sensors
TYP
17.0
1.55
870
45
±25
50
-0.3
-2.1
RELATIVE POWER vs FORWARD
CURRENT
FORWARD I-V CHARACTERISTICS
FEATURES
MIN
14.0
100
90
AMBIENT TEMPERATURE(℃)
Marktech
Optoelectronics
www.marktechopto.com
80
60
40
20
0
-30
0
30
60
AMBIENT TEMPERATURE(℃)
90
1.5
1.4
1.3
1.2
1.1
1
-30
0
30
60
90
AMBIENT TEMPERATURE(℃)
2006/5/24
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