TSC HS3BB 3.0amps high efficient surface mount rectifier Datasheet

HS3AB - HS3MB
creat by ART
3.0AMPS High Efficient Surface Mount Rectifiers
SMB/DO-214AA
Pb
RoHS
COMPLIANCE
Features
—
Glass passivated junction chip.
—
For surface mounted application
—
Low forward voltage drop
—
Low profile package
—
Built-in stain relief, ideal for automatic
placement
—
Fast switching for high efficiency
—
High temperature soldering:
260℃/10 seconds at terminals
—
Plastic material used carries Underwriters
Laboratory Classification 94V-0
—
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
Case: Molded plastic
Terminal: Pure tin plated, lead free
HS3XB = Specific Device Code
G
= Green Compound
—
Polarity: Indicated by cathode band
Y
= Year
—
Packing: 12mm tape per EIA STD RS-481
M
= Work Month
—
Weight: 0.093 grams
—
—
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Repetitive Peak Reverse Voltage
VRRM
HS
3AB
50
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified Current
IF(AV)
3
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
100
A
Type Number
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
@3A
Maximum Reverse Current @ Rated VR
T A=25 ℃
T A=125 ℃
VF
HS
3BB
100
HS
3DB
200
HS
3FB
300
HS
3GB
400
HS
3JB
600
HS
3KB
800
HS
3MB
1000
1.0
1.3
uA
250
Maximum Reverse Recovery Time (Note 2)
Trr
50
75
Cj
80
50
Operating Temperature Range
Storage Temperature Range
V
10
IR
RθjA
V
1.7
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Unit
nS
pF
O
60
C/W
TJ
- 55 to + 150
O
C
TSTG
- 55 to + 150
O
C
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G11
RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
1000
3
2.5
2
1.5
RESISTIVE OR
INDUCTIVE LOAD
1
0.5
0
0
25
50
75
100
125
LEAD TEMPERATURE (oC)
150
175
INSTANTANEOUS REVERSE CURRENT (uA)
AVERAGE FORWARD
CURRENT (A)
3.5
TA=125℃
100
10
TA=25℃
1
0.1
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
0
PEAK FORWARD SURGE
URRENT (A)
300
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
8.3mS Single Half Sine Wave
JEDEC Method
250
200
150
100
50
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
1000
100
INSTANTANEOUS FORWARD CURRENT (A)
TA=25℃
FIG. 4 TYPICAL JUNCTION CAPACITANCE
175
CAPACITANCE (pF)
150
125
100
HS3AB-HS3GB
75
50
10
HS3AB-HS3DB
HS3GB
1
HS3JB-HS3MB
0.1
HS3JB-HS3MB
25
0
0.01
0.1
1
10
REVERSE VOLTAGE (V)
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
FORWARD VOLTAGE (V)
1.4
1.6
1.8
Version:G11
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