NTE NTE3029A Infrared-emitting diode Datasheet

NTE3029A
Infrared–Emitting Diode
Description:
The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D Low Cost
D Low Degradation
D New Mold Technology Improves Performance under Variable Environmental Conditions
D New Lens Design offers Improved Optical Performance
Applications:
D Low Bit Rate Communication Systems
D Keyboards
D Coin Handlers
D Paper Handlers
D Touch Screens
D Shaft Encoders
D General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Leakage Current
IR
VR = 6V
–
0.05
100
µA
Forward Voltage
VF
IF = 50mA
–
1.3
1.5
V
–
–1.6
–
mV/°C
–
24
50
pF
Temperature Coefficient of Forward Voltage
Capacitance
∆VF
C
V = 0V, f = 1MHz
Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
930
940
950
nm
Spectral Half Power Wavelength
–
48
–
nm
Spectral Output Temperature Shift
–
0.3
–
nm/°C
λP
Peak Emission Wavelength
Test Conditions
IF = 50mA
Axial Power Output Intensity
PO
IF = 20mA, Note 4
50
150
–
µW/ sq cm
Intensity Per Unit Solid Angle
Ee
IF = 20mA, Note 4
0.2
0.65
–
mW/Sr
Power Half–Angle
Ω
–
±20
–
°
tr, tf
–
1.0
–
µs
Rise Time and Fall Time
Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under
test.
.160 (4.06)
.045 (1.14) Dia
.120
(3.04)
.125
(3.17)
.168
(4.27)
.750
(19.05)
Max
.020 (.508)
K
A
.100 (2.54)
.060 (1.52)
.103
(2.62)
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