Zetex FMMV105G Silicon planar variable capacitance diode Datasheet

SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
FMMV105G
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
1
2
1
PARTMARKING DETAILS
FMMV105G – 4EZ
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
VALUE
UNIT
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Reverse Breakdown
Voltage
V BR
30
Reverse current
IR
Series Inductance
LS
Diode Capacitance
Temperature
Coefficient
T CC
TYP.
MAX.
UNIT
CONDITIONS.
V
I R = 10µA
nA
V R = 28V
3.0
nH
f=250MHz
280
ppm/ °C V R = 3V, f=1MHz
10
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Diode Capacitance
Cd
Capacitance Ratio
Figure of MERIT
TYP.
MAX.
UNIT
CONDITIONS.
1.8
2.8
pF
V R = 25V, f=1MHz
Cd / Cd
4.0
6.0
Q
250
350
Spice parameter data is available upon request for this device
V R = 3V/25V, f=1MHz
V R = 3V, f=50MHz
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