Infineon HYB18L256160BC-7.5 Bjawbmspecialty drams mobile-ram Datasheet

Infineon Specialty DRAMs
Mobile-RAM
w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M
Never stop thinking.
Mobile-RAM – Extended Battery
Lifetime for Handhelds
A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of
leading-edge Mobile-RAM devices (low-power SDRAMs) targeted specifically at:
PDAs
Cellphones (smart and feature phones)
Digital cameras
MP3 players
I N F I N E O N ’ S M O B I L E - R A M product line combines
Ultra low-power consumption for battery-powered systems with
Extra compact chip-scale packages for space-constrained applications
I N F I N E O N ’ S M O B I L E - R A M cuts power consumption by up to 80 % (depending on operating conditions
and system design) – thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated
power management features.
M O B I L E - R A M D E V I C E S come in a Fine-pitch Ball Grid Array (FBGA) package. These packages leverage
Infineon’s proprietary wire bonding Board-On-Chip (BOC) technology for smallest form factors. The latest product
generation further improves form factor by reducing package heights from 1.2 to 1 mm.
Impressive Power Consumption Savings
I N F I N E O N ’ S M O B I L E - R A M devices achieve these dramatic power consumption savings by measuring
the temperature with an integrated sensor and automatically adjusting the refresh interval accordingly.
F O R U S E R S , this means that their devices can either run twice as long on a single battery charge or can
offer completely new features that would have been previously unthinkable. The fact that nearly half of all PDAs produced
today contain Mobile-RAMs from Infineon confirms the company’s pioneering role in this segment.
Mobile-RAM for Lowest Power Consumption also in Operating Mode
Standard SDRAM
“low power sort”
215 mW
77 %
100 %
163 mW
58 %
76 %
100 %
108 mW
38 %
50 %
66 %
3.3 V - 256 M
65 mA*
2.5 V - 256 M
65 mA*
1.8 V - 256 M
60 mA*
Power consumption
281 mW
100 %
3.3 V - 256 M
85 mA*
* operating current (lcc1)
Mobile-RAM for Unlimited Memory Supply in Standby Mode
Standard SDRAM
“low power sort”
Power consumption
2.8 mW
100 %
3.3 V - 256 M
850 µA (70°C)*
* standby current (lcc6)
1.6 mW
57 %
100 %
1.19 mW
43 %
74 %
100 %
3.3 V - 256 M
475 µA (70°C)*
2.5 V - 256 M
475 µA (70°C)*
0.68
24
43
57
mW
%
%
%
1.8 V - 256 M
375 µA (70°C)*
Ahead of the Trend
2003
2004
2005
3.3 V
Voltage
conversion
2.5 V
1.8 V
Trend towards
green package
TSOP
Trend towards
KGD
BGA
FGBA
Known Good Die
SDR
Trend towards
DDR
DDR
Source: IFX
M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
I N A N T I C I P A T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
A N D T O R E D U C E P O W E R consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Industry-wide Standard
I N F I N E O N W O R K E D C L O S E L Y with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM
Product Portfolio
Density
128 Mb
8 M x 16
Temp.
Power
Power
# of
range
supply core
supply I/O
banks
HYB39L128160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
TSOP-54
HYB39L128160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
FBGA-54
HYB25L128160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
–
X
X
X
–
–
FBGA-54
HYE25L128160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
–
X
X
X
–
–
FBGA-54
Part number
OCTS TCSR PASR DPD
DS
GREEN
Package
product
NEW!
HYB18L128160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYE18L128160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYB18L128160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
NEW!
HYE18L128160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
256 Mb
16 M x 16
HYB39L256160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
TSOP-54
HYB39L256160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
FBGA-54
HYB25L256160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
–
–
FBGA-54
HYE25L256160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
–
–
FBGA-54
HYB25L256160AF-7.5
0 - 70°C
3.3 V
3.3 V or
or 2.5 V
2.5 V / 1.8 V
4
X
X
X
X
–
X
FBGA-54
4
X
X
X
X
–
X
FBGA-54
HYE25L256160AF-7.5
3.3 V
3.3 V or
or 2.5 V
2.5 V / 1.8 V
-25 - 85°C
NEW!
HYB18L256160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYE18L256160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYB18L256160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
NEW!
HYE18L256160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
HYB25L512160AC-7.5
3.3 V
3.3 V or
0 - 70°C
or 2.5 V
2.5 V / 1.8 V
4
X
–
X
X
–
–
FBGA-54
512 Mb,Dual
16 M x 16
Speed: 133 MHz CAS Latency: 3-3-3
OCTS (On-Chip Temperature Sensor):
PASR (Partial Array Self-Refresh):
The built-in temperature sensor adapts the refresh
Allows user to select volume of memory needed to
rate to the actual junction temperature of the chip
further reduce power consumption
without draining any CPU power. (Note: with
Adjustable from all 4 banks to 1/16 array
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
DPD (Deep Power-Down):
Maximum power consumption reduction by cutting
TCSR (Temperature-Compensated Self-Refresh):
Same as OCTS but externally triggered
off power supply to Mobile-RAM
Data is not retained
CPU power required
DS (Selectable Drive Strength):
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
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