Central BDW51A Power transistor Datasheet

2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
2N6674
450
VEB=7.0V
IC=200mA (2N6674)
BVCEO
VCE(SAT)
IC=200mA (2N6675)
IC=10A, IB=2.0A
VCE(SAT)
VCE(SAT)
UNITS
V
400
V
300
VEBO
IC
7.0
V
15
A
ICM
IB
20
A
5.0
A
175
W
PD
TJ, Tstg
-65 to +200
°C
ΘJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE=1.5V
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
IEBO
BVCEO
2N6675
650
MAX
0.1
UNITS
mA
1.0
mA
2.0
mA
300
V
400
V
1.0
V
IC=10A, IB=2.0A, TC=100°C
IC=15A, IB=5.0A
2.0
V
5.0
V
VBE(SAT)
hFE
IC=10A, IB=2.0A
VCE=2.0V, IC=10A
1.5
V
IS/b
IS/b
VCE=30V, IC=5.9A
VCE=100V, IC=250mA
1.0
hfe
ft
VCE=10V, IC=1.0A, f=5.0MHz
VCE=10V, IC=1.0A, f=5.0MHz
3.0
15
50
MHz
Cob
VCB=10V, IE=0, f=100kHz
150
500
pF
8.0
20
s
1.0
s
10
R1 (10-March 2011)
2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
td*
VEB=6.0V, IC=10A, IB=2.0A
0.1
tr*
VEB=6.0V, IC=10A, IB=2.0A
0.6
tr*
ts*
ts*
tf*
tf*
VEB=6.0V, IC=10A, IB=2.0A, TC=100°C
VEB=6.0V, IC=10A, IB1=IB2=2.0A
VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C
VEB=6.0V, IC=10A, IB1=IB2=2.0A
VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C
1.0
UNITS
µs
µs
µs
2.5
µs
4.0
µs
0.5
µs
1.0
µs
* VCC=135V, tp=20µs
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (10-March 2011)
w w w. c e n t r a l s e m i . c o m
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