ADPOW MDS800 800 watts, 50 volts pulsed avionics at 1090 mhz Datasheet

MDS800
800 Watts, 50 Volts
Pulsed Avionics at 1090 MHz
CASE OUTLINE
55ST-1
(Common Base)
GENERAL DESCRIPTION
The MDS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1090 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
1458
Maximum Voltage and Current
Collector to Base Voltage (BVces)
60
Emitter to Base Voltage (BVebo)
3.5
60
Collector Current (Ic)
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°°C
SYMBOL
CHARACTERISTICS
Pout
Pin
Pg
ηc
RL
Pd
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Return Loss
Power Droop
Load Mismatch Tolerance1
TEST CONDITIONS
F = 1090 MHz
Vcc = 50 Volts
Burst width = 128µs
LTDF = 2%
MIN
TYP
MAX
800
UNITS
W
110
8.6
40
-12
0.5
F = 1090 MHz
dB
%
dB
dB
4.0:1
FUNCTIONAL CHARACTERISTICS @ 25°°C
BVebo
BVces
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
NOTES:
1. At rated output power and pulse conditions
2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period
Ie = 30 mA
Ic = 50 mA
Vce = 5V, Ic = 1A
3.5
65
20
V
V
0.12
°C/W
Rev. B– Dec 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
MDS800
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
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