Mitsubishi FS3KM-14A High-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS3KM-14A
HIGH-SPEED SWITCHING USE
FS3KM-14A
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡VDSS ................................................................................ 700V
¡rDS (ON) (MAX) .............................................................. 4.75Ω
¡ID ............................................................................................ 3A
¡Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
PD
Tch
Tstg
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Viso
—
Isolation voltage
Weight
Conditions
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
Ratings
Unit
700
±30
3
9
V
V
A
A
30
–55 ~ +150
–55 ~ +150
2000
W
°C
°C
Vrms
2
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 700V, VGS = 0V
Gate-source threshold voltage
Drain-source on-state resistance
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
Typ.
Max.
700
±30
—
—
—
—
—
—
±10
V
V
µA
—
2
—
—
—
3
3.65
5.48
1
4
4.75
7.13
mA
V
Ω
V
1.4
—
—
—
2.4
460
50
9
—
—
—
—
S
pF
pF
pF
—
—
—
—
12
15
52
22
—
—
—
—
ns
ns
ns
ns
—
1.0
1.5
V
—
—
4.17
°C/W
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
40
30
20
10
0
0
50
100
150
DRAIN CURRENT ID (A)
tw = 10ms
100ms
100
7
5
3
2
1ms
10ms
100ms
10–1
7
5
3
2
TC = 25°C
Single Pulse
DC
10–2 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
TC = 25°C
Pulse Test
8
VGS = 20V
6
10V
4
5V
2
10
20
TC = 25°C
Pulse Test
VGS = 20V
10V
5V
PD = 30W
1.6
4.5V
1.2
0.8
4V
0.4
PD = 30W
4V
0
101
7
5
3
2
CASE TEMPERATURE TC (°C)
10
0
MAXIMUM SAFE OPERATING AREA
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
10
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
50
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
ID = 6A
30
20
3A
10
TC = 25°C
Pulse Test
8
VGS = 10V
6
20V
4
2
1A
0
4
8
12
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
101
7
5
TC = 25°C
VDS = 50V
Pulse Test
8
6
4
2
0
VDS = 10V
Pulse Test
TC = 25°C
3
75°C
2
125°C
100
7
5
3
2
0
4
8
12
16
10–1 –1
10
20
2 3
5 7 100
5 7 101
2 3
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
103
7
5
Ciss
102
7
5
3
2
Coss
101
7
5
3 Tch = 25°C
2 f = 1MHZ
100
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
GATE-SOURCE VOLTAGE VGS (V)
10
CAPACITANCE
Ciss, Coss, Crss (pF)
16
Crss
VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
0
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
td(off)
3
tf
2
101 –1
10
tr
td(on)
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-14A
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 250V
12
400V
600V
8
4
0
4
8
12
16
75°C
4
25°C
2
0
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
–50
0
50
100
3.0
2.0
1.0
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
CHANNEL TEMPERATURE Tch (°C)
0.4
TC = 125°C
6
GATE CHARGE Qg (nC)
101
7
5
10–1
VGS = 0V
Pulse Test
8
20
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
10
Tch = 25°C
ID = 3A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5 D = 1.0
3 0.5
2
100 0.2
7 0.1
5
3
2
10–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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