ON EFC4612R N-channel power mosfet Datasheet

Ordering number : ENA1477B
EFC4612R
N-Channel Power MOSFET
http://onsemi.com
24V, 6A, 45mΩ, Dual EFCP
Features
•
•
•
•
•
2.5V drive
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Common-drain type
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Source-to-Source Voltage
Conditions
Ratings
VSSS
VGSS
Gate-to-Source Voltage
Source Current (DC)
IS
ISP
Source Current (Pulse)
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
24
V
±12
V
6
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7064-001
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
EFC4612R-TR
1.26
Taping Type : TR
3
Marking
1.26
4
FN
TR
1
2
0.22
Electrical Connection
0.15
1
Rg
2
0.65
2
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.65
1
4
LOT No.
3
0.3
Rg
3
EFCP1313-4CC-037
Rg=200Ω
Semiconductor Components Industries, LLC, 2013
July, 2013
4
O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8
EFC4612R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Source-to-Source Breakdown Voltage
V(BR)SSS
Zero-Gate Voltage Source Current
ISSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Ratings
Conditions
min
Unit
max
24
V
IS=1mA, VGS=0V
VSS=20V, VGS=0V
Test Circuit 1
VGS(off)
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
Test Circuit 3
| yfs |
VSS=10V, IS=3A
Test Circuit 4
RSS(on)1
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
Test Circuit 5
24
39
45
mΩ
RSS(on)2
Test Circuit 5
25
41
48
mΩ
RSS(on)3
IS=3A, VGS=3.7V
Test Circuit 5
27.5
43
50
mΩ
RSS(on)4
IS=3A, VGS=3.1V
Test Circuit 5
31.5
48
57
mΩ
RSS(on)5
IS=3A, VGS=2.5V
Test Circuit 5
33.5
58
72
mΩ
td(on)
tr
Test Circuit 1
typ
Test Circuit 2
See specified Test Circuit.
Fall Time
td(off)
tf
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
Forward Source-to-Source Voltage
VF(S-S)
IS=3A, VGS=0V
Test Circuit 7
Test Circuit 6
0.5
1
μA
±10
μA
1.3
3.1
V
S
20
ns
230
ns
130
ns
210
ns
7
nC
0.8
1.2
V
Ordering Information
Device
EFC4612R-TR
Package
Shipping
memo
EFCP
5,000pcs./reel
Pb Free and Halogen Free
No. A1477-2/8
EFC4612R
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
Test Circuit 2
IGSS(+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
IT11565
Test Circuit 3
VGS(off)
IT11566
Test Circuit 4
| yfs |
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
IT11567
Test Circuit 5
RSS(on)
IT11568
Test Circuit 6
VF(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 7
td(on), tr, td(off), tf
VDD=10V
IS=3A
RL=3.33Ω
V
S2 OUT
VIN
G2
PW=10μs
D.C.≤1%
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1477-3/8
EFC4612R
IS -- VSS
VSS=10V
5
3.5
V GS=1.5V
3.0
2.5
2.0
1.5
4
3
2
1
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Source-to-Source Voltage, VSS -- V
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
100
80
60
40
20
0
2
4
6
8
IS -- VF(S-S)
0.01
0
0.2
0.4
0.6
0.8
1.0
Forward Source-to-Source Voltage, VF(S-S) -- V
VGS -- Qg
2.5
2.0
1.5
1.0
0.5
1
2
3
4
3A
.0V, I S=
V GS=4
--40 --20
0
20
40
5
Total Gate Charge, Qg -- nC
6
7
IT14686
60
80
100
120
140
5
160
IT14683
SW Time -- IS
VSS=10V
VGS=4.5V
3
td(off)
2
tf
100
7
tr
5
3
td(on)
2
2
3
5 7 0.1
2
3
2
5 7 1.0
3
100
7
5
3
2
10
7
5
3
2
ISP=60A
PW≤10μs
10
0μ
s
1m
s
IS=6A
1.0
7
5
3
2
0.1
7
5
3
2
5 7 10
IT14685
ASO
2
3.0
0
20
Source Current, IS -- A
3.5
0
40
IT14684
VSS=10V
IS=6A
4.0
60
10
0.01
1.2
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
4.5
=3A
V, I S
=2.5
=3A
S
VG
V, I S
=3.1
VGS
A
, I S=3
=4.5V
VGS
Ambient Temperature, Ta -- °C
Switching Time, SW Time -- ns
Ta=7
5°C
25°C
--25°C
Source Current, IS -- A
3
2
3
2
=3.7
VGS
80
7
1.0
7
5
2.0
IT14681
=3A
V, I S
100
1000
3
2
1.5
120
IT14682
VGS=0V
0.1
7
5
1.0
RSS(on) -- Ta
0
--60
10
Gate-to-Source Voltage, VGS -- V
10
7
5
0.5
Gate-to-Source Voltage, VGS -- V
140
Ta=25°C
IS=3A
120
0
0
IT14720
RSS(on) -- VGS
140
0
2.0
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
0
25°C --25°C
4.0
Ta=7
5°C
4.5
Source Current, IS -- A
Source Current, IS -- A
5.0
4.0V 3.1V
5.5
IS -- VGS
6
2.5V
10.0V 4.5V
6.0
10
ms
1
DC 00m
op s
era
tio
n
Operation in this area
is limited by RSS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Source-to-Source Voltage, VSS -- V
2 3
5
IT14721
No. A1477-4/8
EFC4612R
PT -- Ta
1.8
When mounted on ceramic substrate
(5000mm2×0.8mm)
Total Dissipation, PT -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14722
No. A1477-5/8
EFC4612R
Taping Specification
EFC4612R-TR
No. A1477-6/8
EFC4612R
Outline Drawing
EFC4612R-TR
Land Pattern Example
Mass (g) Unit
(0.0011) mm
* For reference
Unit: mm
0.65
0.65
0.3
No. A1477-7/8
EFC4612R
Note on usage : Since the EFC4612R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1477-8/8
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