NTE NTE2556 Silicon npn transistor darlington, motor/relay driver Datasheet

NTE2556
Silicon NPN Transistor
Darlington, Motor/Relay Driver
Features:
D High DC Current Gain
D High Current Capacity
D Wide ASO Range
Applications:
D Motor Drivers
D Printer Hammer Drivers
D Relay Drivers
D Voltage Regulator Control
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 80V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
3.0
mA
DC Current Gain
hFE
VCE = 3V, IC = 4A
fT
VCE = 5V, IC = 4A
–
20
–
MHz
Collector Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 8mA
–
0.9
1.5
V
Base Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 8mA
–
–
2.0
V
Gain–Bandwidth Product
1500 4000
–
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0
V(BR)CEO IC = 50mA, RBE = ∞
Collector Emitter Breakdown Voltage
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
VCC = 50V, VBE = –5V,
500IB1 = –500IB2 = IC = 4A,
Pulse Width = 50µs,
Duty Cycle ≤ 1%
.402 (10.2)
Min
Typ
Max
Unit
110
–
–
V
100
–
–
V
–
0.6
–
µs
–
4.8
–
µs
–
1.6
–
µs
.177 (4.5)
.035
(0.9)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
NPN
.100 (2.54)
C
B
E
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