IRF IRHNA7264SE Transistor n-channel(bvdss=250v, rds(on)=0.110ohm, id=34a) Datasheet

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Provisional Data Sheet No. PD-9.1432A
REPETITIVE AVALANCHE AND dv/dt RATED
®
HEXFET
IRHNA7264SE
TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Ω, (SEE) RAD HARD HEXFET
250Volt, 0.110Ω
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the
user can expect the highest quality and reliability in the
industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Part Number
IRHNA7264SE
BV DSS
250V
R DS(on)
0.110Ω
ID
34A
Features:
■
■
■
■
■
■
■
■
■
■
■
■
■
Radiation Hardened up to 1 x 10 5 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Product Summary
Pre-Radiation
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25o C
ID @ VGS = 12V, TC = 100o C
IDM
PD @ TC = 25oC
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHNA7264SE
34
21
136
300
2.4
±20
500
34
30
4.0
-55 to 150
Units
A
W
W/K ➄
V
mJ
A
mJ
V/ns
oC
300 (for 5 sec.)
3.3 (typical)
g
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IRHNA7264SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
250
—
—
—
—
—
V
o
V/ C
—
—
2.5
4
—
—
—
—
—
—
—
—
0.110
0.123
4.5
—
50
250
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
185
55
180
35
200
140
75
—
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7800
1250
550
—
—
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, I D = 1.0 mA
nC
VGS = 12V, ID =24A
➃
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0 mA
VDS > 15V, I DS = 21A ➃
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 34A
VDS = Max. Rating x 0.5
ns
VDD = 125V, ID =34A,
RG = 2.35Ω
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nH
pF
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
34
136
A
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
875
12
V
ns
µC
Forward Turn-On Time
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, I S = 34A, VGS = 0V ➃
Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
0.42
RthJ-PCB
Junction-to-PC board
—
TBD
—
To Order
Test Conditions
K/W ➄
soldered to a copper-clad PC board
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IRHNA7264SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a V DSS
bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and
are presented in Table 1. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used.
Table 1. Low Dose Rate ➅ ➆
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown in Table 3.
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance One
Diode Forward Voltage ➃
Test Conditions ➉
Units
100K Rads (Si)
min.
VSD
High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/
Sec.
IRHNA7264SE
Parameter
BVDSS
VGS(th)
IGSS
IGSS
I DSS
RDS(on)1
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105 Rads
(Si), no change in limits are specified in DC parameters.
max.
250
2.0
—
—
—
—
—
4.5
100
-100
50
0.110
µA
Ω
VGS = 0V, ID = 1.0 mA
VGS = VDS , ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID =21A
—
1.4
V
TC = 25o C, IS = 34A,VGS = 0V
V
nA
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
—
— 200 —
—
200
V
Applied drain-to-source voltage
during gamma-dot
—
10
—
—
10
—
A
Peak radiation induced photo-current
—
16 —
— 2.3
— A/µsec Rate of rise of photo-current
—
1
—
—
20
—
µH
Circuit inductance required to limit di/dt
Drain-to-Source Voltage
IPP
di/dt
L1
Table 3. Single Event Effects ➈
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
250
V
Ni
28
1 x 105
~35
200
-5
To Order
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IRHNA7264SE Devices
Radiation Characteristics
➅ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
➁
➂
➃
➄
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25oC,
EAS = [0.5 * L * ( ) * [BVDSS/(BV DSS-V DD)]
Peak IL = 34A, VGS = 12V, 25 ≤ RG ≤ 200Ω
ISD ≤ 34A, di/dt ≤ 170 A/µs,
VDD ≤ BVDSS, TJ ≤ 150oC
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = oC/W
W/K = W/o C
➆
➇
➈
➉
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — SMD-2
LEAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2. CONTROLLING DIMENSION: INCH
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4 DIMENSION INCLUDES METALLIZATION FLASH
5 DIMENSION DOES NOT INCLUDE METALLIZATION FLASH
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Data and specifications subject to change without notice.
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