ON MBR130T1G Surface mount schottky power rectifier Datasheet

MBR130T1, MBR130T3
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style.
Features
•
•
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
30 VOLTS
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C;
Human Body Model, 3
Pb−Free Packages are Available
SOD−123
CASE 425
STYLE 1
Mechanical Characteristics
• Reel Options: MBR130T1 = 3,000 per 7 in reel/8 mm tape
•
•
•
•
•
•
MBR130T3 = 10,000 per 13 in reel/8 mm tape
Device Marking: S3
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MARKING DIAGRAM
1
S3MG
G
S3
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
MBR130T1
SOD−123
3000/Tape & Reel
MBR130T1G
SOD−123
(Pb−Free)
3000/Tape & Reel
MBR130T3
SOD−123
10,000/Tape & Reel
MBR130T3G
SOD−123
(Pb−Free)
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 2
1
Publication Order Number:
MBR130T1/D
MBR130T1, MBR130T3
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR) TL = 65°C
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
5.5
A
Storage Temperature Range
Tstg
−65 to +125
°C
Operating Junction Temperature
TJ
−65 to +125
°C
dv/dt
1000
V/ms
Symbol
Value
Unit
RθJA
230
°C/W
A
1.0
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Lead (Note 1)
RθJL
108
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A, TJ = 25°C)
(IF = 0.7 A, TJ = 25°C)
(IF = 1.0 A, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(VR = 5 V, TC = 25°C)
IR
Typ
Max
−
−
0.47
0.35
0.45
−
V
mA
60
10
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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2
Unit
MBR130T1, MBR130T3
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
1
TJ = 125°C
75°C
0.1
0.2 0.25
0.3
0.35
25°C
0.4
0.45 0.5
0.55
0.6
1
TJ = 125°C
75°C
0.1
0.65
0.2 0.25
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.4
0.45 0.5
0.55
0.6 0.65
Figure 2. Typical Forward Voltage
0.01
200
TJ = 125°C
180
0.001
C, CAPACITANCE (pF)
IR, REVERSE CURRENT (AMPS)
0.35
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
75°C
0.0001
0.00001
25°C
0.000001
160
140
120
100
80
60
40
20
0.0000001
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
30
0
0
Figure 3. Typical Reverse Current
1.8
1.6
dc
1.4
RATED
VOLTAGE
APPLIED
1.2
SQUARE
WAVE
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
TL, LEAD TEMPERATURE (°C)
5
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
35
Figure 4. Typical Capacitance
PF(AV), AVERAGE FORWARD POWER
DISSIPATION (WATTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0.3
25°C
120
0.9
0.8
0.7
SQUARE
WAVE
0.6
dc
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6 1.8
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
Figure 5. Current Derating, Lead, RqJL = 1085C/W
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3
MBR130T1, MBR130T3
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
E
L
2
MIN
0.037
0.000
0.020
−−−
0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
−−−
0.063
0.106
0.145
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
STYLE 1:
PIN 1. CATHODE
2. ANODE
C
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
−−−
−−−
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
−−−
−−−
0.25
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR130T1/D
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