BSI BS62UV2006SIG85 Ultra low power/voltage cmos sram 256k x 8 bit Datasheet

Ultra Low Power/Voltage CMOS SRAM
256K X 8 bit
BSI
„ FEATURES
• Wide Vcc operation voltage :
C-grade: 1.8V~3.6V
I-grade: 1.9V~3.6V
(Vcc_min.=1.65V at 25oC)
• Ultra low power consumption :
Vcc = 2.0V C-grade : 8mA (Max.) operating current
I- grade : 10mA (Max.) operating current
0.20uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade : 11mA (Max.) operating current
I- grade : 13mA (Max.) operating current
0.30uA (Typ.) CMOS standby current
• High speed access time :
-85
85ns (Max.)
-10
100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
BS62UV2006
• Data retention supply voltage as low as 1.0V
• Easy expansion with CE2, CE1, and OE options
„ DESCRIPTION
The BS62UV2006 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.2uA at 2.0V /25oC and maximum access time of 85ns at 85oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV2006 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
POWER DISSIPATION
STANDBY
Operating
SPEED
( ns )
( ICCSB1, Max )
C-grade:1.8~3.6V
I-grade:1.9~3.6V
BS62UV2006DC
BS62UV2006TC
BS62UV2006STC
BS62UV2006SC
BS62UV2006DI
BS62UV2006TI
BS62UV2006STI
BS62UV2006SI
Vcc=2.0V
85/100
3.0uA
2.0uA
11mA
8mA
-40 O C to +85 O C
1.9V ~ 3.6V
85/100
5.0uA
3.0uA
13mA
10mA
BS62UV2006TC
BS62UV2006STC
BS62UV2006TI
BS62UV2006STI
1
2
3
4
5
6
7 BS62UV2006SC
8 BS62UV2006SI
9
10
11
12
13
14
15
16
•
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
Vcc=3.0V
1.8V ~3.6V
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Vcc=2.0V
+0 O C to +70 O C
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DICE
TSOP-32
STSOP-32
SOP-32
DICE
TSOP-32
STSOP-32
SOP-32
„ BLOCK DIAGRAM
„ PIN CONFIGURATIONS
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
PKG TYPE
( ICC, Max )
Vcc=3.0V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A13
A17
A15
A16
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
20
Row
1024
Memory Array
1024 x 2048
Decoder
2048
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
CE1
CE2
WE
OE
Vdd
Gnd
8
8
Data
Input
Buffer
Data
Output
Buffer
Column I/O
8
8
Write Driver
Sense Amp
256
Column Decoder
16
Control
Address Input Buffer
A11 A9 A8 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62UV2006
1
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ PIN DESCRIPTIONS
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
WE
CE1
CE2
OE
Not selected
(Power Down)
X
H
X
X
X
X
L
X
Output Disabled
H
L
H
Read
H
L
H
Write
L
L
H
PARAMETER
I CCSB, I CCSB1
H
High Z
I CC
L
D OUT
I CC
X
D IN
I CC
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
V TERM
Terminal Voltage with
Respect to GND
TBIAS
Temperature Under Bias
-40 to +85
O
TSTG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
C
RANGE
AMBIENT
TEMPERATURE
Commercial
0 O C to +70 O C
Industrial
-40 C to +85 C
O
O
Vcc
1.8V ~ 3.6V
1.9V ~ 3.6V
C
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS62UV2006
Vcc CURRENT
High Z
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
I/O OPERATION
2
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not 100% tested.
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
V IL
V IH
IIL
ILO
V OL
VOH
ICC
ICCSB
ICCSB1(4)
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(2)
Voltage
MIN.
Vcc=2.0V
Vcc=2.0V
Vcc=3.0V
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
Output Leakage Current
Vcc = Max, CE1 = V IH or CE2=VIL
or OE = V IH, VI/O = 0V to Vcc
Vcc
Vcc
Vcc
Vcc
1.4
2.0
---
--
1
------
0.2
0.4
--10
(5)
V
Vcc+0.3
V
1
uA
uA
Vcc=2.0V
Operating Power Supply
Current
Vcc = Max, CE1= V IL, CE2=V IH
(3)
IDQ = 0mA, F = Fmax
Vcc=2.0V
--V cc-0.2
2.4
--
Vcc=3.0V
--
--
13
Standby Current-TTL
Vcc = Max, CE1 = V IH or
CE2=V IL
IDQ = 0mA
Vcc=2.0V
--
--
0.1
Vcc=3.0V
--
--
0.5
Vcc=2.0V
--
0.20
3.0
Vcc=3.0V
--
0.30
5.0
Output High Voltage
Standby Current-CMOS
Vcc = Max, CE1≧Vcc-0.2V or
CE2≦0.2V ;V IN≧ Vcc - 0.2V or
V IN≦0.2V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
UNITS
0.6
0.8
Max, IOL = 0.1mA
Max, IOL = 2.0mA
Min, IOH = -0.1mA
Min, IOH = -1.0mA
Output Low Voltage
=
=
=
=
MAX.
------
-0.3
Vcc=3.0V
TYP. (1)
V
V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC . 4. IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC. 5. VIL = -1.5V for pulse width less than 30ns.
„ DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.0
--
--
V
ICCDR(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
--
--
ns
--
--
ns
tR
See Retention Waveform
Operation Recovery Time
0
TRC
(2)
1. Vcc = 1.0V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR is 0.7uA at TA=70oC.
„ LOW VCC DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.0V
Vcc
CE1
Vcc
tR
t CDR
CE1 ≥ Vcc - 0.2V
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2)
VIH
( CE2 Controlled )
Data Retention Mode
Vcc
VDR ≧ 1.0V
Vcc
CE2
R0201-BS62UV2006
VIL
Vcc
tR
t CDR
CE2 ≦ 0.2V
3
VIL
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ KEY TO SWITCHING WAVEFORMS
„AC TEST CONDITIONS
(Test Load and Input/Output Reference)
WAVEFORM
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 100pF+1TTL
CL = 30pF+1TTL
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC)
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tRC
Read Cycle Time
tAVQV
tAA
Address Access Time
tE1LQV
tACS1
Chip Select Access Time
(CE1)
tE2HOV
tACS2
Chip Select Access Time
tGLQV
tOE
Output Enable to Output Valid
t E1LQX
tCLZ1
tE2HOX
DESCRIPTION
CYCLE TIME : 100ns
CYCLE TIME : 85ns
MIN. TYP. MAX.
MIN. TYP. MAX.
(Vcc = 1.9~3.6V)
(Vcc = 1.9~3.6V)
100
--
--
85
--
--
--
100
--
--
85
ns
--
--
100
--
--
85
ns
(CE2)
--
--
100
--
--
85
ns
--
--
45
--
--
40
ns
Chip Select to Output Low Z
(CE1)
15
--
--
15
--
--
ns
tCLZ2
Chip Select to Output Low Z
(CE2)
15
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output in Low Z
15
--
--
10
--
--
ns
tE1HQZ
tCHZ1
Chip Deselect to Output in High Z
(CE1)
--
--
40
--
--
35
ns
tE2HQZ
tCHZ2
Chip Deselect to Output in High Z
(CE2)
--
--
40
--
--
35
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
35
--
--
30
ns
tAXOX
tOH
Data Hold from Address Change
15
--
--
15
--
--
ns
R0201-BS62UV2006
4
--
UNIT
ns
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2
(1,3,4)
CE1
CE2
t
t
ACS1
t
ACS2
t
(5)
(5)
CHZ1,
t
CHZ2
CLZ
D OUT
READ CYCLE3
(1,4)
t RC
ADDRESS
t
AA
OE
t
t
CE1
t
CE2
(5)
t
OH
OLZ
t ACS1
CLZ1
t
t
OE
t OHZ (5)
(1,5)
t CHZ1
ACS2
t
(5)
(2,5)
CHZ2
CLZ2
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS62UV2006
5
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
t WC
t CW
t AS
t AW
t WP
t WR1
t WR2
t WHZ
t DW
t DH
t OHZ
tWHOX
t OW
DESCRIPTION
CYCLE TIME : 100ns
CYCLE TIME : 85ns
MIN. TYP. MAX.
MIN. TYP. MAX.
(Vcc = 1.9~3.6V)
(Vcc = 1.9~3.6V)
UNIT
Write Cycle Time
100
--
--
85
--
--
ns
Chip Select to End of Write
100
--
--
85
--
--
ns
ns
0
--
--
0
--
--
Address Valid to End of Write
100
--
--
85
--
--
ns
Write Pulse Width
50
--
--
40
--
--
ns
Address Setup Time
Write recovery Time
(CE1,WE)
0
--
--
0
--
--
ns
Write recovery Time
(CE2)
0
--
--
0
--
--
ns
--
--
40
--
--
35
ns
Data to Write Time Overlap
40
--
--
35
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
--
--
40
--
--
35
ns
10
--
--
10
--
--
ns
Write to Output in High Z
End of Write to Output Active
„ SWITCHING WAVEFORMS (WRITE CYCLE)
t WC
WRITE CYCLE1 (1)
ADDRESS
t
(3)
WR1
OE
(11)
t CW
(5)
CE1
(5)
CE2
t CW
t
WE
(11)
t WR2
AW
t
t AS
(3)
WP
(2)
(4,10)
t OHZ
D OUT
t DH
t DW
D IN
R0201-BS62UV2006
6
Revision 1.1
Jan.
2004
BSI
BS62UV2006
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t
(5)
CW
CE1
CE2
(5)
(11)
t
t CW
AW
t WR2
t WP
(3)
(2)
WE
t AS
(4,10)
t WHZ
D OUT
t
OW
t
DH
(7)
(8)
t DW
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low.
All signals must be active to initiate a write and any one signal can terminate a write by going
inactive. The data input setup and hold timing should be referenced to the second transition edge
of the signal that terminates the write.
3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the
outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input
signals of opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BS62UV2006
7
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ ORDERING INFORMATION
BS62UV2006 X X
Z
YY
SPEED
85: 85ns
10: 100ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
S: SOP
T: TSOP (8mm x 20mm)
ST: Small TSOP (8mm x 13.4mm)
D: DICE
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
„ PACKAGE DIMENSIONS
STSOP - 32
R0201-BS62UV2006
8
Revision 1.1
Jan.
2004
BSI
BS62UV2006
„ PACKAGE DIMENSIONS (continued)
TSOP - 32
WITH PLATING
b
c c1
BASE METAL
b1
SECTION A-A
SOP -32
R0201-BS62UV2006
9
Revision 1.1
Jan.
2004
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