Excelics EIC1213-8 12.75-13.25 ghz 8-watt internally matched power fet Datasheet

EIC1213-8
12.75-13.25 GHz 8-Watt Internally Matched Power FET
ISSUED 3-19-09
FEATURES
•
•
•
•
•
•
•
Excelics
12.75– 13.25 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
28% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.024
EIC1213-8
.827±.010 .669
.421
.120 MIN
.120 MIN
YYWW
SN
.004
.125
.063
.508±.008
.442
.004
.168±.010
.105±.008
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
IMD3
PAE
Output Power at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈2200mA
Output 3rd Order Intermodulation Distortion
2
∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 13.25 GHz
Power Added Efficiency at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ ≈ 2200mA
Id1dB
Drain Current at 1dB Compression
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
RTH
MIN
TYP
MAX
38.5
39
dBm
5.5
6.5
dB
±0.6
-41
f = 12.75-13.25GHz
dB
-45
dBc
28
%
2200
2600
mA
VDS = 3 V, VGS = 0 V
3.8
4.6
A
VDS = 3 V, IDS = 40 mA
-2.5
-4.0
3
Thermal Resistance
3.5
Note: 1) Tested with 50 Ohm gate resistor.
UNITS
2) S.C.L. = Single Carrier Level.
V
o
3.8
C/W
3) Overall Rth depends on case mounting.
1,2
MAXIMUM RATING AT 25°C
SYMBOLS
Vds
Vgs
Pin
Tch
Tstg
Pt
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage
15
10V
Gate-Source Voltage
-5
-4V
PARAMETERS
Input Power
35dBm
@ 3dB Compression
Channel Temperature
175 oC
175 oC
Storage Temperature
-65 to +175 oC
-65 to +175 oC
Total Power Dissipation
39.5W
39.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revision A1
EIC1213-8
ISSUED 3-19-09
12.75-13.25 GHz 8-Watt Internally Matched Power FET
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
Excelics
EIC1213-8
YYWW
SN
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC.
AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revision A1
Similar pages