GOOD-ARK BAS40LP Dfn 1.0x0.6-2l plastic-encapsulate schottky barrier diode Datasheet

BAS40LP
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
FEATURES
MARKETS

Low Forward Voltage Drop

Mobile Handsets

Fast Switching

MP3 Players

Ultra-Small Leadless Surface Mount Package

Digital Camera and Camcorders

PN Junction Guard Ring for Transient and ESD

Notebook PCs & PDAs
Protection

GPS

Totally Lead-Free & Fully RoHS Compliant (Notes 1
& 2)
MECHANICAL DATA

Case: DFN1006-2

Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating
94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: Cathode Dot

Terminals: Finish - NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method
208

Weight: 0.001 grams (approximate)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.goodark.com for more information about Good-Ark’s definitions of Halogen and Antimony-free, "Green" and
Lead-free.
3. For packaging details, go to our website at http://www.goodark.com.
Maximum Ratings (Ta=25℃ unless otherwise specified)
Symbol
VRRM
VRWM
VR
IF
IFSM
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
Forward Continuous Current
200
mA
Forward Surge Current @ t < 1.0s
600
mA
Value
Unit
Power Dissipation (Note 4)
250
mW
Thermal Resistance, Junction to Ambient Air (Note 4)
400
℃/W
Operating Temperature Range
-55~+125
℃
Storage Temperature Range
-65~+150
℃
Thermal Characteristics
Symbol
PD
RθJA
TJ
TSTG
Parameter
1/4
BAS40LP
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Reverse Breakdown Voltage (Note 5)
V(BR)R
Test conditions
IR = 10μA
Min
Typ
Max
Unit
40
-
-
V
-
-
380
1000
mV
Forward Voltage
VF
tp < 300μs, IF = 1.0mA
tp < 300μs, IF = 40mA
Reverse Leakage Current (Note 5)
IR
tp < 300μs, VR = 30V
20
200
nA
Total Capacitance
CT
VR = 0V, f = 1.0MHz
2.3
5.0
pF
Reverse Recovery Time
Trr
IF=10mA through IR= 10mA
to IR = 1.0mA, RL = 100Ω
5.0
nS
Notes:
4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.goodark.com
5. Short duration pulse test used to minimize self-heating effect.
2/4
BAS40LP
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
Electrical characteristic curves (Ta=25℃ unless otherwise specified)
3/4
BAS40LP
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
DFN 1.0X0.6-2L Package Outline Dimensions
Lead finish: NiPdAu
DFN 1.0X0.6-2L Suggested Pad Layout
4/4
Similar pages