Vishay IRFBC40LPBF Power mosfet Datasheet

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Surface Mount (IRFBC40S/SiHFBC40S)
600
RDS(on) (Ω)
VGS = 10 V
RoHS*
• Available in Tape and Reel (IRFBC20S, COMPLIANT
Qg (Max.) (nC)
60
Qgs (nC)
8.3
• Dynamic dV/dt Rating
Qgd (nC)
30
• 150 °C Operating Temperature
Configuration
SiHFBC20S)
Single
• Fast Switching
• Fully Avalanche Rated
D
I2PAK (TO-262)
Available
• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
1.2
• Lead (Pb)-free Available
D2PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L/SiHFBC40L) is available
for low-profile applications.
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
D2PAK (TO-263)
IRFBC40SPbF
SiHFBC40S-E3
IRFBC40S
SiHFBC40S
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
IRFBC40STRLPbFa
SiHFBC40STL-E3a
IRFBC40STRLa
SiHFBC40STLa
I2PAK (TO-262)
IRFBC40LPbF
SiHFBC40L-E3
IRFBC40L
SiHFBC40L
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltagee
VDS
600
Gate-Source Voltagee
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta,e
ID
UNIT
V
6.2
3.9
A
IDM
25
1.0
W/°C
Single Pulse Avalanche Energyb, e
EAS
570
mJ
Repetitive Avalanche Currenta
IAR
6.2
A
13
mJ
Linear Derating Factor
Repetitive Avalanche
Energya
Maximum Power Dissipation
EAR
TC = 25 °C
TA = 25 °C
Peak Diode Recovery dV/dtc, e
PD
dV/dt
130
3.1
3.0
W
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
SYMBOL
LIMIT
UNIT
TJ, Tstg
- 55 to + 150
°C
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12).
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40/SiHFBC40 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
-
40
Maximum Junction-to-Case
RthJC
-
1.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.70
-
V/°C
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
100
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VGS = 10 V
ID = 3.7 Ab
VDS = 100 V, ID = 3.7 Ab
µA
-
-
1.2
Ω
4.7
-
-
S
-
1300
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Source Inductance
LS
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VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 6.2 A, VDS = 3600 V,
see fig. 6 and 13b, c
VDD = 300 V, ID = 6.2 A,
RG = 9.1 Ω, RD = 47 Ω,VGS = 10 V,
see fig. 10b, c
Between lead, and center of die contact
-
160
-
-
30
-
-
-
60
-
-
8.3
-
-
30
-
13
-
-
18
-
-
55
-
-
20
-
-
7.5
-
pF
nC
ns
nH
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
6.2
-
-
25
-
-
1.5
-
450
940
ns
-
3.8
7.9
µC
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRFBC40/SiHFBC40 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
Fig. 2 - Typical Output Characteristics
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
RD
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
I AS
V DD
VDS
10 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91116.
Document Number: 91116
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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