PHILIPS BBY39 Uhf variable capacitance double diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D088
BBY39
UHF variable capacitance double
diode
Product specification
Supersedes data of November 1993
1996 May 03
Philips Semiconductors
Product specification
UHF variable capacitance double diode
BBY39
FEATURES
• Excellent linearity
• Small plastic SMD package
• C28: 1.9 pF; ratio: 8.3.
handbook, halfpage
3
3
APPLICATIONS
• Electronic tuning in UHF television
tuners
1
2
• VCO.
1
2
MAM169
DESCRIPTION
The BBY39 is a variable capacitance
double diode with a common cathode,
fabricated in planar technology, and
encapsulated in the SOT23 small
plastic SMD package.
Marking code: S12.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+125
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
IR
PARAMETER
reverse current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VR = 28 V; see Fig.3
−
−
10
nA
VR = 28 V; Tj = 85 °C; see Fig.3
−
−
200
nA
rs
diode series resistance
f = 470 MHz; note 1
−
−
1.2
Ω
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Figs 2 and 4
−
16.5
−
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.6
−
2
pF
f = 1 MHz
−
−
C d ( 1V )
-------------------C d ( 28V )
capacitance ratio
8
Note
1. VR is the value at which Cd = 9 pF.
1996 May 03
2
Philips Semiconductors
Product specification
UHF variable capacitance double diode
BBY39
GRAPHICAL DATA
MBE874
20
handbook, full pagewidth
Cd
(pF)
16
12
8
4
0
10 −1
1
10
10 2
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MLC816
10 3
handbook, halfpage
TC d
(K−1)
IR
(nA)
10 4
102
10
0
50
o
T j ( C)
10 5
10 1
100
Fig.4
Fig.3
MLC815
10 3
handbook, halfpage
Reverse current as a function of junction
temperature; maximum values.
1996 May 03
3
1
10
VR (V)
102
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
UHF variable capacitance double diode
BBY39
PACKAGE OUTLINE
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.55
0.45
B
1.9
0.95
2
1
0.1
max
10 o
max
0.2 M A
A
1.4
1.2
2.5
max
10 o
max
3
1.1
max
30 o
max
0.48
0.38
0.1 M A B
MBC846
TOP VIEW
Dimensions in mm.
Fig.5 SOT23.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03
4
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