Fairchild BAT54SWT1G Schottky diode Datasheet

BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Connection Diagram
BAT54SWT1G
3
BAT54CWT1G
3
1
2
3
2
1
MARKING
SOT-323
2
1
BAT54SWT1G = YB
BAT54CWT1G = YC
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600
mA
TSTG
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
-65 to +125
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Value
Unit
PD
Symbol
Power Dissipation
Parameter
232
mW
RθJA
Thermal Resistance, Junction to Ambient
430
°C/W
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max.
Units
240
320
400
500
0.8
mV
mV
mV
mV
V
VR
Breakdown Voltage
IR = 10µA
VF
Forward Voltage
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
IR
Reverse Leakage
VR = 25V
2
µA
CT
Total Capacitance
VR = 1V, f = 1.0MHz
10
pF
trr
Reverse Recovery Time
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
5.0
ns
©2005 Fairchild Semiconductor Corporation
BAT54SWT1G/BAT54CWT1G Rev. A
1
30
V
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Schottky Diodes
April 2005
Figure 1. Forward Voltage vs Temperature
Figure 2. Reverse Leakage Current
vs Temperature
1E-3
0.1
125 °C
0.01
1E-3
1E-4
1E-5
Reverse Current, IR[A]
Forward Current, IF[A]
1E-4
100 °C
75 °C
25 °C
125 °C
100 °C
1E-5
75 °C
1E-6
1E-7
25 °C
1E-6
0.2
0.4
0.6
1E-8
0.8
0
10
Forward Voltage Drop, VF[V]
20
30
Reverse Voltage, VR[V]
Figure 3. Capacitance vs Reverse Bias Voltage
20
Juntion Capacitance, CJ[pF]
18
15
13
10
8
5
3
0
0
2
4
6
8
10
Reverse Voltage, VR[V]
BAT54SWT1G/BAT54CWT1G Rev. A
2
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Schottky Diodes
Typical Performance Characteristics
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
3
BAT54SWT1G/BAT54CWT1G Rev. A
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Schottky Diodes
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