AVAGO AT-42070 Up to 6 ghz medium power silicon bipolar transistor Datasheet

AT-42070
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-42070 is a general purpose NPN bipolar
transistor that offers excellent high ­frequency performance.
The AT‑42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many
different functions. The 20 emitter finger interdigitated
geometry yields a medium sized transistor with impedances
that are easy to match for low noise and medium power
applications. This device is ­ designed for use in low noise,
wideband amplifier, mixer and oscillator applications in the
VHF, UHF, and microwave frequencies. An optimum noise
match near 50Ω up to 1 GHz, makes this device easy to use
as a low noise amplifier.
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package
The AT-42070 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) ­process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the ­fabrication of this device.
70 mil Package
AT-42070 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance [2,4]:
θjc = 150°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique
results in a higher, though more accurate
determination of θjc than do alternate
methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Min.
Typ.
|S 21E| 2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
10.5
f = 4.0 GHz
11.5
5.5
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dBm21.0
f= 4.0 GHz20.5
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
f = 4.0 GHz
f = 2.0 GHz
dB
f = 4.0 GHz
Max.
1.9
3.0
14.0
10.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
—
30
150270
µA
0.2
µA2.0
pF
0.28
Note:
1. For this test, the emitter is grounded.
Units
8.0
AT-42070 Typical Performance, TA = 25°C
24
2.0 GHz
12
2.0 GHz
20
4.0 GHz
P1dB
16
12
0
10
20
30
40
8
4
50
G1dB
0
10
4.0 GHz
20
IC (mA)
4V
P1dB
12
24
35
21
30
18
GAIN (dB)
MSG
20
MAG
|S21E|2
10
0
GA
15
12
4
9
3
NFO
3
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
0
0.5
1.0
2.0
6V
4V
G1dB
12
0
10
20
30
40
50
IC (mA)
6
5
10 V
14
10
50
Figure 2. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. VCE = 8 V.
40
15
40
IC (mA)
Figure 1. Insertion Power Gain vs. Collector Current
and Frequency. VCE = 8 V.
25
30
2
1
0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
NFO (dB)
0
GAIN (dB)
6V
16
16
G1 dB (dB)
4.0 GHz
4
10 V
20
2.0 GHz
8
G1 dB (dB)
|S21E|2 GAIN (dB)
16
24
P1 dB (dBm)
1.0 GHz
P1 dB (dBm)
20
Figure 3. Output Power and 1 dB Compressed Gain vs.
Collector Current and Voltage. f = 2.0 GHz.
AT-42070 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
0.1
.70
-4928.526.56
154
-36.0
0.5
.69
-13721.5
11.85
105
-29.6
1.0
.69
-165
16.0
6.34
85
-27.2
1.5
.68
-179
12.7
4.33
72
-27.4
2.0
.69
169
10.3
3.26
62
-25.6
2.5
.69
164
8.52.64
56
-25.4
3.0
.70
157
6.92.22
48
-23.8
3.5
.70
151
5.6
1.91
39
-22.4
4.0
.69
144
4.5
1.68
30
-21.4
4.5
.68
137
3.5
1.5022
-20.4
5.0
.68
1282.7
1.37
14
-19.4
5.5
.68
1172.0
1.26
5
-18.3
6.0
.70
107
1.2
1.15
-3
-17.6
S12 S22
Mag.
Ang.
Mag.
.016
77
.91
.033
34
.50
.04429
.40
.043
37
.38
.052
42
.37
.054
46
.37
.065
52
.39
.076
51
.41
.085
55
.43
.096
49
.46
.107
50
.48
.121
45
.48
.132
44
.48
Ang.
-18
-41
-44
-48
-54
-55
-63
-71
-77
-83
-87
-91
-98
S12 S22
Mag.
Ang.
Mag.
.010
50
.77
.019
46
.34
.033
51
.28
.040
59
.27
.053
59
.27
.065
65
.28
.072
65
.28
.086
59
.30
.097
60
.33
.109
54
.36
.126
50
.38
.138
46
.39
.152
40
.38
Ang.
-29
-42
-41
-44
-51
-53
-62
-72
-80
-85
-90
-94
-102
AT-42070 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
0.1
.52
-95
33.4
46.52
139
-40.0
0.5
.66
-16323.1
14.33
95
-34.4
1.0
.67
179
17.3
7.36
80
-29.6
1.5
.67
169
13.9
4.97
69
-28.0
2.0
.68
160
11.4
3.74
60
-27.3
2.5
.69
157
9.6
3.04
55
-23.8
3.0
.69
151
8.12.55
47
-22.8
3.5
.69
145
6.82.20
39
-21.4
4.0
.68
139
5.7
1.9320
-20.2
4.5
.67
132
4.7
1.7422
-19.3
5.0
.67
123
4.0
1.59
13
-18.0
5.5
.67
113
3.2
1.46
5
-17.2
6.0
.69
1032.5
1.34
-4
-16.4
A model for this device is available in the DEVICE MODELS section.
AT-42070 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
0.1
0.5
1.0
2.0
4.0
NFO
dB
1.0
1.1
1.5
1.9
3.0
Γopt
Mag
.05
.06
.10
.23
.45
Ang
15
75
126
172
-145
RN/50
0.13
0.13
0.12
0.11
0.17
Ordering Information
Part Number
AT-42070
No. of Devices
100
70 mil Package Dimensions
.040
1.02
4
EMITTER
.020
.508
BASE
COLLECTOR
3
1
2
.004 ± .002
.10 ± .05
EMITTER
.070
1.78
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2654EN
AV02-1218EN May 5, 2008
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