Renesas H5N3003 Silicon n channel mos fet high speed power switching Datasheet

H5N3003P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0007-0200Z
(Previous ADE-208-1547A(Z))
Rev.2.00
Aug.01.2003
Features
• Low on-resistance
• Low leakage current
• High Speed Switching
Outline
TO-3P
D
G
1
S
Rev.2.00, Aug.01.2003, page 1 of 9
2
3
1. Gate
2. Drain (Flange)
3. Source
H5N3003P
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
300
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
40
A
160
A
Note1
Drain peak current
ID (pulse)
Body-drain diode reverse drain
current
IDR
40
A
Body-drain diode reverse
drain peak current
IDR (pulse) Note1
160
A
Avalanche current
IAPNote3
30
A
Note2
Channel dissipation
Pch
150
W
Channel to case Thermal
Impedance
θch-c
0.833
°C /W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Rev.2.00, Aug.01.2003, page 2 of 9
H5N3003P
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
300
—
—
V
ID = 10mA, VGS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 300V, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±30V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
VDS = 10V, ID = 1mA
Forward transfer admittance
|yfs|
20
35
—
S
ID = 20A, VDS = 10VNote4
Static drain to source on state
resistance
RDS(on)
—
0.058
0. 069 Ω
ID = 20A, VGS= 10VNote4
Input capacitance
Ciss
—
5150
—
pF
VDS = 25V
Output capacitance
Coss
—
560
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1MHz
Turn-on delay time
td(on)
—
60
—
ns
ID= 20A
Rise time
tr
—
185
—
ns
RL = 7.5Ω
Turn-off delay time
td(off)
—
220
—
ns
VGS = 10V
Fall time
tf
—
150
—
ns
Rg=10 Ω
Total gate charge
Qg
—
130
—
nC
VDD = 240V
Gate to source charge
Qgs
—
25
—
nC
VGS = 10V
Gate to drain charge
Qgd
—
60
—
nC
ID = 40A
Body–drain diode forward voltage
VDF
—
1.0
1.5
V
IF = 40A, VGS = 0
Body–drain diode reverse recovery trr
time
—
280
—
ns
IF = 40A, VGS = 0
diF/dt=100A/µs
Body–drain diode reverse recovery Qrr
charge
—
2.5
—
µC
Notes: 4. Pulse test
Rev.2.00, Aug.01.2003, page 3 of 9
H5N3003P
Main Characteristics
Power vs. Temperature Derating
ID (A)
300
150
100
50
PW
30
DC
10
er
3
50
100
150
200
1
6V
60
5.5 V
20
0
VGS = 5 V
4
8
12
Drain to Source Voltage
Rev.2.00, Aug.01.2003, page 4 of 9
16
20
VDS (V)
ID (A)
Pulse Test
80
40
ion
s(
1s
c=
ho
t)
(T
25
°C
)
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
7V
m
at
Ta = 25°C
Tc (°C)
Drain Current
ID (A)
Drain Current
10 V
8V
s
limited by RDS(on)
Typical Output Characteristics
100
10
Operation in
0.1
Case Temperature
=
1 this area is
0.3
0
Op
1m
10
µ
0µ s
s
10
100
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
VDS = 10 V
Pulse Test
80
60
40
25°C
Tc = 75°C
20
0
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
H5N3003P
Pulse Test
4
3
I D = 40 A
2
20 A
1
10 A
Static Drain to Source on State Resistance
RDS(on) (Ω)
0.02
0.01
0
12
4
8
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V,15 V
0.1
0.05
V GS = 10 V
I D = 40 A
0.12
20 A
0.08
10 A
0.04
0
–40
0
40
80
120
Case Temperature Tc (°C)
Rev.2.00, Aug.01.2003, page 5 of 9
160
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
5
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
V DS = 10 V
Pulse Test
0.5
0.2
0.2
5
10 20
Drain Current
ID (A)
0.5 1
2
50 100
H5N3003P
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
20000
Capacitance C (pF)
50000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
VGS = 0
f = 1 MHz
10000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Ciss
5000
2000
1000
Coss
500
200
100
Crss
50
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
20
40
60
Drain to Source Voltage
400
300
V DS = 50 V
100 V
240 V
VGS
VDD
200
100
0
16
12
8
V DS = 240 V
100 V
50 V
40
80
120
160
Gate Charge Qg (nC)
Rev.2.00, Aug.01.2003, page 6 of 9
4
0
200
Switching Characteristics
10000
Switching Time t (ns)
I D = 40 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
500
80
100
VDS (V)
V GS = 10 V, V DD = 150 V
PW = 10 µs, duty < 1 %
R G =10 Ω
tf
1000
tr
t d(off)
tf
100
t d(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N3003P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
80
V GS = 0 V
60
40
10 V
20
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
0
50
100
Case Temperature
VSD (V)
Switching Time Test Circuit
150
Waveform
Vout
Monitor
Vin Monitor
200
Tc (°C)
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 150 V
Vout
10%
10%
90%
td(on)
Rev.2.00, Aug.01.2003, page 7 of 9
tr
10%
90%
td(off)
tf
H5N3003P
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
lse
t
ho
T
1s
Rev.2.00, Aug.01.2003, page 8 of 9
PW
T
PW
pu
100 µ
D=
1m
100 m
10 m
Pulse Width PW (s)
1
10
H5N3003P
Package Dimensions
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Aug.01.2003, page 9 of 9
TO-3P
—
Conforms
5.0 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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