TSC BC817-25RF 300mw, npn small signal transistor Datasheet

BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
SOT-23
Collector
Base
F
A
Emitter
Features
—Low power loss, high current capability, low VF
B
—Surface device type mounting
E
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
C
G
D
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
Min
Max
—Case : SOT- 23 small outline plastic package
A
1.50
1.70
0.059
0.067
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
3.55
3.85
0.140
0.152
C
0.45
0.65
0.018
0.026
—High temperature soldering guaranteed: 260°C/10s
D
2.60
2.80
0.102
0.11
—Weight : 0.008gram (approximately)
E
1.05
1.25
0.041
0.049
F
0.08
0.15
0.003
0.006
G
0.02 REF
0.50 REF
Ordering Information
Part No.
Package
Packing
BC817-16/-25/-40 RF
SOT-23
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Power Dissipation
BC817-16
BC817-25
BC817-40
Units
PD
300
mW
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
IC
500
mA
RθJA
388
°C/W
TJ, TSTG
-55 to + 150
°C
Collector Current
Thermal Resistance (Junction to Ambient)
(Note 1)
Junction and Storage Temperature Range
Electrical Characteristics
Type Number
Symbol
BC817-16
BC817-25
BC817-40
Units
Collector-Base Breakdown Voltage
IC= 10μA
IE= 0
V(BR)CBO
50
V
Collector-Emitter Breakdown Voltage
IC= 10mA
IB= 0
V(BR)CEO
45
V
Emitter-Base Breakdown Voltage
IE= 1μA
IC= 0
V(BR)EBO
5
V
Collector Cut-off Current
VCB= 45V
IE= 0
ICBO
0.1
μA
Emitter Cut-offCurrent
VEB= 4V
IC= 0
IEBO
0.1
μA
Collector-Emitter saturation voltage IC= 500mA
IB= 50mA
VCE(sat)
0.7
V
IC= 500mA
IB= 50mA
VBE(sat)
1.2
V
fT
100
MHz
Base-Emitter saturation voltage
Transition frequency
Junction Capacitance
DC current gain
DC current gain
VCE= 5V IC= 10mA f= 100MHz
VR=0V, f=1.0MHz
VCE= 1V
IC= 100mA
VCE= 1V
IC= 100mA
CJ
hFE
hFE
pF
10
100
-
600
>40
>40
>40
100-250
160-400
250-600
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : C09
BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Collector-Emitter Saturation Voltage vs
Collector Current
FIG 1 Typical Pulsed Current Gain vs
Collector Current
10
Ic, Collector Current (mA)
Ic, Collector Current (A)
10
o
25 C
1
0.1
0.01
VCE=5
0.001
1
o
25 C
0.1
0.01
0
100
200
300
400
500
0
0.1
hFE
0.4
0.5
0.6
FIG 4 Base-Emitter on Voltage vs
Collector Current
1
Ic, Collector Current (A)
1000
Ic, Collector Current (mA)
0.3
VCE(sat), Collector-Emitter Voltage (V)
FIG 3 Base-Emitter Saturation Voltage vs
Collector Current
25oC
100
10
1
0
0.2
Ambient Temperature (°C)
0.4
0.6
0.8
1
25o
0.1
0.01
0.001
1.2
1.4
VBE(sat),Base-Emitter Voltage (V)
Collector-Base Capactiance (pF)
0.2
0
0.2
0.4
Reverse Voltage (V)
0.6
0.8
1
1.2
1.4
VBE(sat),Base-Emitter on Voltage (V)
FIG 5 Collector-Base Capacitance vs
Collector-Base Voltage
40
30
20
10
0
0
4
8
12
16
20
24
28
VCB,Collector-Base Voltage (V)
Version : C09
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