ON NID5001N Self−protected fet with temperature and current limit Datasheet

NID5001N
Self−Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
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VDSS
(Clamped)
RDS(ON) TYP
ID MAX
(Limited)
42 V
23 mW @ 10 V
33 A*
*Max current may be limited below this value
depending on input conditions.
Drain
Features
•
•
•
•
•
•
•
•
•
Low RDS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Package is Available
Gate
Input
RG
Overvoltage
Protection
MPWR
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 MW)
VDGR
42
Vdc
Rating
Gate−to−Source Voltage
VGS
Drain Current − Continuous
ID
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
"14
Vdc
Internally Limited
W
64
1.0
1.56
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
1.95
120
80
°C/W
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 4.5 Apk, L = 120 mH, RG = 25 W)
EAS
1215
mJ
Operating and Storage Temperature Range
April, 2006 − Rev. 8
Y
WW
D5001N
G
−55 to 150
°C
1
2
3
= Year
= Work Week
= Device Code
= Pb−Free Package
YWW
D50
01NG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
NID5001NT4
NID5001NT4G
TJ, Tstg
1
DPAK
CASE 369C
STYLE 2
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″ square FR4 board
(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
© Semiconductor Components Industries, LLC, 2006
MARKING
DIAGRAM
Package
Shipping†
DPAK
2500/Tape & Reel
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NID5001N/D
NID5001N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C)
V(BR)DSS
Min
Typ
Max
Unit
42
42
46
44
50
50
Vdc
1.5
6.5
5.0
50
100
mAdc
1.8
5.0
2.0
Vdc
−mV/°C
23
43
29
55
28
50
34
60
VSD
0.80
1.1
V
VGS = 5.0 Vdc, VDD = 25 Vdc
ID = 1.0 Adc, Ext RG = 2.5 W
T(on)
32
40
ms
T(off)
68
75
VGS = 10 Vdc, VDD = 25 Vdc,
ID = 1.0 Adc, Ext RG = 2.5 W
T(on)
11
15
T(off)
86
95
Slew Rate On
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton
0.5
V/ms
Slew−Rate Off
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
0.35
V/ms
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSSF
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C)
RDS(on)
1.0
Source−Drain Forward On Voltage
(IS = 5 A, VGS = 0 V)
mW
mW
SWITCHING CHARACTERISTICS
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
(VGS = 5.0 Vdc)
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
ILIM
30
19
36
30
29
13
41
24
49
31
TLIM(off)
150
175
200
°C
TLIM(on)
135
160
185
°C
TLIM(off)
150
165
185
°C
TLIM(on)
135
150
170
°C
(VGS = 10 Vdc)
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
Temperature Limit
(Circuit Reset)
VGS = 5.0 Vdc
Temperature Limit (Turn−off)
VGS = 10 Vdc
Temperature Limit
(Circuit Reset)
VGS = 10 Vdc
Adc
21
12
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
V
4000
400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NID5001N
TYPICAL PERFORMANCE CURVES
ID, DRAIN CURRENT (AMPS)
VGS = 10 V to 4.2 V
28
4V
3.8 V
24
ID, DRAIN CURRENT (AMPS)
28
3.6 V
20
TJ = 25°C
3.4 V
16
3.2 V
12
3.0 V
8
2.8 V
4
2.6 V
0
20
TC = −55°C
16
12
8
25°C
4
100°C
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
24
0
0
0.2
ID = 5 A
TJ = 25°C
0.15
0.1
0.05
0
2
3
5
4
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
4
0.035
TJ = 25°C
0.03
VGS = 5 V
0.025
VGS = 10 V
0.02
0.015
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
100000
ID = 5 A
VGS = 10 V
VGS = 0 V
1.4
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ 10 V
10000
1.2
1
TJ = 150°C
1000
TJ = 100°C
0.8
0.6
−50
−25
0
25
50
75
100
100
10
15
20
25
30
35
40
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
45
NID5001N
TYPICAL PERFORMANCE CURVES
100
VGS = 0 V
TJ = 25°C
0.12
I D , DRAIN CURRENT (AMPS)
IS, SOURCE CURRENT (AMPS)
0.14
0.1
0.08
0.06
0.04
VGS = 5 V
SINGLE PULSE
TC = 25°C
10
dc
1.0
0.1
0.5
0.6
0.7
0.8
0.1
0.9
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.4
10 ms
1 ms
0.02
0
0.3
Based upon a TJ = 100°C, Steady State.
1.0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
Figure 7. Diode Forward Voltage vs. Current
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4
100
NID5001N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NID5001/D
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