NTE NTE357 Silicon npn transistor rf power output po = 7w @ 175mhz Datasheet

NTE357
Silicon NPN Transistor
RF Power Output
PO = 7W @ 175MHz
Description:
The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in
the 125−175MHz frequency range.
Features:
D Specified 28V, 175MHz Characteristics −
Output Power = 7.0 Watts
Minimum Gain = 8.4dB
Efficiency = 60%
D Characterized from 125 to 175MHz
D Includes Series Equivalent Impedances
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Min
Typ
Max
Unit
Collector−Emitter Breakdown V(BR)CEO IC = 200mAdc, IB = 0,
Voltage
(Note 1)
35
−
−
Vdc
Collector−Emitter Breakdown V(BR)CES IC = 200mAdc, VBE = 0
Voltage
65
−
−
Vdc
Parameter
Symbol
Test Conditions
OFF Characteristics
Note 1. Pulsed through 25mH inductor
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Emitter−Base Breakdown
Voltage
Test Conditions
V(BR)EBO IE = 5mAdc, IC = 0
Collector Cut−Off Current
Min
Typ
Max
Unit
4
−
−
Vdc
mAdc
ICBO
VCB = 30Vdc, IE = 0
−
−
1
hFE
IC = 100mAdc, VCE = 5Vdc
5
−
−
Cob
VCB = 30Vdc, IE = 0,
f = 0.1 to 1.0MHz
−
8.5
15
pf
GPE
POUT = 7W, VCE = 28Vdc,
f = 175MHz
8.4
12.5
−
dB
η
POUT = 7W, VCE = 28Vdc,
f = 175MHz
60
−
−
%
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Functional Test
Common−Emitter Amplifier
Power Gain
Collector Efficiency
1.065 (27.08) Max
.530
(13.46)
C
.220
(5.58)
E
E
.305
(7.75)
.030 (.762)
B
.090 (2.28)
.375 (9.52) Dia
.260 (6.60)
.005 (0.15)
.325 (8.28) Dia
.075
(1.94)
.115 (2.92)
8−32 NC−3A
Wrench Flat
.730
(18.54)
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