Fairchild FJP3305H2 High voltage capability Datasheet

FJP3305
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Regulator
1
1.Base
Absolute Maximum Ratings
Symbol
TO-220
2.Collector
3.Emitter
TC = 25°C unless otherwise noted
Parameter
Value
Units
V CBO
Collector-Base Voltage
700
V
V CEO
Collector-Emitter Voltage
400
V
V EBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC = 25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
1
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
October 2008
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
BV CBO
Collector-Base Breakdwon Voltage
IC = 500mA, IE = 0
700
V
BV CEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
BV EBO
Emitter-Base Breakdown Voltage
IE = 500mA, IC = 0
9
V
ICBO
Collector Cut-off Current
VCB = 700V, IE = 0
1
mA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
1
mA
hFE1
hFE2
DC Current Gain *
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
V CE(sat)
Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1.0
V
V
V
V BE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
C ob
Output Capacitance
VCB = 10V, f = 1MHz
tON
Turn On Time
tSTG
Storge Time
tF
Fall Time
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5W
19
8
35
40
4
MHz
65
pF
0.8
ms
4.0
ms
0.9
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
hFE Classification
Classification
H1
H2
hFE1
19 ~ 28
26 ~ 35
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
2
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
VCE = 5V
4.5
IC [A], COLLECTOR CURRENT
O
4.0
IB = 300mA
hFE, DC CURRENT GAIN
3.5
3.0
2.5
IB = 100mA
2.0
1.5
Ta = 75 C
O
IB = 50mA
1.0
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 3. DC Current Gain (O-Grade)
10
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
O
O
Ta = 75 C
hFE, DC CURRENT GAIN
Ta = 125 C
O
Ta = - 25 C
O
Ta = 25 C
10
1
0.01
0.1
1
IC = 4 IB
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
10
0.1
Figure 5. Saturatin Voltage (O-Grade)
10
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.1
1
IC = 4 IB
O
1
Ta = 25 C
O
Ta = - 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
10
IC [A], COLLECTOR CURRENT
0.1
1
10
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
10
Figure 4. Saturation Voltage (R-Grade)
100
0.01
0.01
1
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
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3
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage (O-Grade)
Figure 8. Switching Time
10
10
tF & tSTG [ms], SWITCHING TIME
VCE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
O
O
1 Ta = - 25 C
Ta = 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
0.1
1
tSTG
1
tF
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Reverse Biased Safe Operating Area
Figure 10. Forward Biased Safe Operating Area
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
10
IB1=2A, RB2=0
1
0.1
O
TC = 25 C
Single Pulse
0.01
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
500m s
5ms
IC (DC)
VCC=50V, L=1mH
1
10
1ms
IC (Pulse)
10
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Power Derating
100
PC[W], POWER DISSIPATION
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
4
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
FJP3305 — High Voltage Fast-Switching NPN Power Transistor
Package Dimension
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
FJP3305 Rev. 1.0.0
www.fairchildsemi.com
5
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJP3305 Rev. A1
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6
FJP3305 High Voltage Fast-Switching NPN Power Transistor
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