TSC HERAF1004G 10.0amps. isolated glass passivated high efficient rectifier Datasheet

HERAF1001G - HERAF1008G
CREAT BY ART
Pb
10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
ITO-220AC
RoHS
COMPLIANCE
Features
UL Recognized File # E-326243
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: ITO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Dimensions in inches and (millimeters)
Marking Diagram
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
HERAF100XG
= Specific Device Code
Polarity: As marked
G
= Green Compound
High temperature soldering guaranteed:
260℃/10 secnods/0.25", (6.35mm) from case
Y
= Year
WW
= Work Week
Mounting torque: 5 in-lbs. max
Weight: 1.74 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
50
100
200
300
400
600
800
1000
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified Current
IF(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
150
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 10 A
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
@ T A=25 ℃
@ T A=125 ℃
1.0
1.3
1.7
10
uA
uA
Trr
50
80
Typical Junction Capacitance (Note 3)
Cj
80
60
Operating Temperature Range
Storage Temperature Range
RθJC
V
400
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
V
nS
pF
O
2.0
C/W
TJ
- 65 to + 150
O
C
TSTG
- 65 to + 150
O
C
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E12
RATINGS AND CHARACTERISTIC CURVES (HERAF1001G THRU HERAF1008G)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
10
INSTANTANEOUS REVERSE CURRENT (uA)
AVERAGE FORWARD
CURRENT (A)
12
8
6
4
2
0
0
50
100
150
CASE TEMPERATURE (oC)
TA=125℃
100
10
TA=25℃
1
0.1
150
PEAK FORWARD SURGE
CURRENT (A)
0
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
40
60
80
100
120
140
TA=25℃
120
8.3mS Single Half Sine Wave
JEDEC Method
90
FIG. 5- TYPICAL FORWARD CHARACTERISRICS
60
100
HERAF1001G-04G
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4- TYPICAL JUNCTION CAPACITANCE
180
150
INSTANTANEOUS FORWARD CURRENT (A)
30
0
JUNCTION CAPACITANCE (pF)
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
HERAF1005
1
0.1
HERAF1006G-08G
120
HERAF1001G-05G
90
0.01
0.4
60
HERAF1006G-08G
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
30
0
1
10
100
1000
REVERSE VOLTAGE (V)
Version:E12
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