NTE NTE3085 Optoisolator photon coupled bilateral analog fet Datasheet

NTE3085
Optoisolator
Photon Coupled Bilateral Analog FET
Description:
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon
photo detector. The detector is electrically isolated from the input and performs like an ideal isolated
FET designed for distortion–free control of low AC and DC analog signals.
Features:
As A Remote Variable Resistor
D ≤ 100Ω to ≥ 300MΩ
D ≥ 99.9% Linearity
D ≤ 15pF Shunt Capacitance
D ≥ 100GΩ I/O Isolation Resistance
As An Analog Signal Switch
D Extremely Low Offset Voltage
D 60VP–P Signal Capability
D No Charge Injection or Latchup
D ton, toff ≤ 15µs
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 100µs, 100pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Photo Detector
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Breakdow Voltage, V(BR)46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Continouos Detector Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100mA
Total Device
Surge Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1770V
Steady–State Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Infrared Emitting Diode
Forward Voltage
VF
IF = 16mA
–
1.1
1.75
V
Reverse Current
IR
VR = 6V
–
–
10
µA
V = 0, f = 1MHz
–
50
–
pF
30
–
–
V
V46 = 15V, IF = 0
–
–
50
nA
V46 = 15V, IF = 0, TA = +100°C
–
–
50
µA
300
–
–
MΩ
Capacitance
Photo–Detector (Either Polarity)
Breakdown Voltage
V(BR)46 I46 = 10µA, IF = 0
Off–State Dark Current
I46
Off–State Resistance
r46
V46 = 15V, IF = 0
Capacitance
C46
V46 = 0, IF = 0, f = 1MHz
–
–
15
pF
r46
IF = 16mA, I46 = 100µA
–
–
200
Ω
IF = 16mA, I64 = 100µA
–
–
200
Ω
100
–
–
GΩ
V10 = 0, f = 1MHz
–
–
2.5
pF
IF = 16mA, RL = 50Ω, V46 = 5V
–
–
15
µs
–
–
15
µs
–
–
0.1
%
Coupled Electrical Characteristics
On–State Resistance
Isolation Resistance (Input to Output)
VISO
Input to Output Capacitance
Turn–On Time
ton
Turn–Off Time
toff
Resistance, Non–Linearity and
Asymmetry
6
1
5
2
V10 = 500V
IF = 16mA, i46 = 25µARMS,
f = 1kHz
4
3
.260
(6.6)
Max
Anode
1
6 Drain
Cathode
2
5 N.C.
N.C.
3
4 Source
.070 (1.78) Max
.350 (8.89)
Max
.200
(5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)
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