PD - 9.1266G IRF7503 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = 30V D2 D2 RDS(on) = 0.135Ω T o p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ,TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 2.4 1.9 14 1.25 10 ± 20 5.0 -55 to + 150 A W mW/°C V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Typ. Max. Units ––– 100 °C/W All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . 8/25/97 IRF7503 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– 1.0 1.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.059 ––– ––– ––– ––– ––– ––– ––– ––– 7.8 1.2 2.5 4.7 10 12 5.3 210 80 32 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.135 VGS = 10V, ID = 1.7A Ω 0.222 VGS = 4.5V, ID = 0.85A ––– V VDS = VGS , ID = 250µA ––– S VDS = 10V, ID = 0.85A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V 12 ID = 1.7A 1.8 nC VDS = 24V 3.8 VGS = 10V, See Fig. 6 and 9 ––– VDD = 15V ––– ID = 1.7A ns ––– RG = 6.1Ω ––– RD = 8.7Ω, See Fig. 10 ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 1.25 ––– ––– 14 ––– ––– ––– ––– 40 48 1.2 60 72 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 1.7A, VGS = 0V TJ = 25°C, IF = 1.7A di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. D G S IRF7503 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP I D , D ra in -to -S o u rce C u rre n t (A ) I D , Dra in -to -S o u rc e C u rre n t (A ) TOP 10 1 3.0 V 20 µs P U LSE W IDTH TJ = 25 °C A 0.1 0.1 1 10 3.0V 1 20 µs P U LSE W IDTH TJ = 15 0°C A 0.1 10 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) 100 TJ = 2 5 ° C 10 T J = 1 5 0 °C 1 V D S = 1 0V 2 0 µ s P U L S E W ID T H 0.1 3.0 3.5 4.0 4.5 5.0 5.5 10 V D S, D rain-to-S ource Voltage (V) 6.0 V G S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics A I D = 1.7A 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T J , Junction T emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7503 V GS C is s C rs s C o ss 300 20 = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d V G S , G a te -to -S o u rc e V o lta g e (V ) C , C a p a c ita n c e (p F ) 400 12 C os s 200 C rs s 0 A 1 V D S = 24 V V D S = 15 V 16 C is s 100 I D = 1 .7 A 10 8 4 FO R TES T C IR CU IT SEE FIG U R E 9 0 100 0 V D S , Drain-to-Source V oltage (V) 4 6 8 10 A 12 Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) I D , D ra in C u rre n t (A ) I S D , R e v e rse D ra in C u rre n t (A ) 2 10 TJ = 150 °C TJ = 2 5°C 1 VG S = 0 V 0.1 0.4 0.8 1.2 1.6 V S D , S ource-to-Drain Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.0 1 0µs 10 100µ s 1 ms 1 10m s T A = 25 °C T J = 15 0°C S ing le Pulse 0.1 1 A 10 100 V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRF7503 VGS 10V QGS RD VDS QG QGD D.U.T. RG + - VDD VG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 10a. Switching Time Test Circuit Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. VDS 90% 50KΩ .2µF 12V .3µF D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7503 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS ISD * IRF7503 Package Outline Micro8 Outline Dimensions are shown in millimeters (inches) L E A D A S S IG N M E N T S IN C H E S D IM D 3 - B - D D D D D1 D1 D2 D2 A M IL LI M E T E R S M IN MAX M IN MAX . 0 36 .0 4 4 0 .9 1 1 . 11 A1 . 0 04 .0 0 8 0 .1 0 0 . 20 B . 0 10 .0 1 4 0 .2 5 0 . 36 C .0 0 5 .0 0 7 0 .1 3 0 .1 8 D .1 1 6 .1 2 0 2 .9 5 3 .0 5 e . 0 25 6 B A S IC 0 .6 5 B A S IC e1 . 0 12 8 B A S IC 0 .3 3 B A S IC E . 1 16 .1 2 0 2. 9 5 3 .0 5 H .1 8 8 .1 9 8 4 .7 8 5. 03 e L . 0 16 .0 2 6 0 .4 1 0 .6 6 6X θ 0° 6° 0° 6° 8 7 6 5 8 7 6 5 8 7 6 5 3 S IN G L E H E - A - 0 .2 5 (.0 1 0 ) M A M 1 2 3 DUAL 4 1 2 3 4 1 2 3 4 S S S G S1 G 1 S2 G2 e 1 R E C O M M E N D E D F O O T P R IN T θ 1 . 04 ( .0 4 1 ) 8X A -C B 0 . 10 (. 00 4 ) A 1 8X 0. 08 (. 00 3 ) M C L 8X A S B S 0 .3 8 8X ( .0 1 5 ) C 8X 3 .2 0 ( .1 2 6 ) 4. 2 4 5 .2 8 ( .1 6 7 ) ( .2 08 ) N OT ES: 1 D IM E N SIO NIN G A ND TO LER AN C IN G P ER AN SI Y14.5M -1982. 2 C ON T RO LLIN G D IM EN SION : IN C H. 0 . 65 6 X ( .0 2 56 ) 3 D IM E N SIO NS DO NO T IN CL UD E M O LD F LAS H. Part Marking Information Micro8 D A T E C O DE (YW W ) A Y = L A ST D IG IT O F YE A R W W = W EE K E X AM P L E : T H IS IS A N IRF 7 5 0 1 451 750 1 P AR T N UM B ER TOP IRF7503 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) T ERM INA L NUM BE R 1 12 .3 ( .484 ) 11 .7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F E ED DIREC T IO N N O TE S : 1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E TE R . 33 0.00 (12.992) M AX. 14.40 ( .566 ) 12.40 ( .488 ) NO T ES : 1. CO NT RO LLIN G DIMEN SIO N : MILLIME T ER. 2. O UT LINE CO NF O RM S T O E IA- 48 1 & EIA-541. 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