Rohm EMB3 Pnp -100ma -50v complex digital transistor Datasheet

EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
lOutline
Parameter
Tr1 and Tr2
VCEO
-50V
-100mA
4.7kW
IC(MAX.)
R1
EMT6
UMT6
(6)
(1)
(2)
(5)
(4)
SMT6
(4)
lFeatures
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
(3)
(2)
(1)
(3)
EMB3
(SC-107C)
1) Built-In Biasing Resistors.
2) Two DTA143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
(6)
(2)
Inverter circuit, Interface circuit, Driver circuit
(4)
(3)
UMB3N
SOT-353 (SC-88)
(5)
(6)
(1)
IMB3A
SOT-457 (SC-74)
lInner circuit
IMB3A
EMB3 / UMB3N
lApplication
(5)
Collector
(6)
Base
(5)
Emitter
(4)
Collector
(4)
Base
(5)
Emitter
(6)
(1)
Emitter
(2)
Base
(3)
Collector
(3)
Emitter
(2)
Base
(1)
Collector
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMB3
EMT6
1616
T2R
180
8
8,000
B3
UMB3N
UMT6
2021
TR
180
8
3,000
B3
IMB3A
SMT6
2928
T108
180
8
3,000
B3
Part No.
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2012.06 - Rev.C
Data Sheet
EMB3 / UMB3N / IMB3A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
IC(MAX.)*1
-100
mA
150 (Total)*3
mW
300 (Total)*4
mW
Tj
150
°C
Tstg
-55 to +150
°C
Collector current
Collector Power dissipation
EMB3 / UMB3N
PD
IMB3A
Junction temperature
Range of storage temperature
*2
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= -50mA
-50
-
-
V
BVCEO
IC= -1mA
-50
-
-
V
BVEBO
IE= -50mA
-5
-
-
V
Collector cut-off current
ICBO
VCB = -50V
-
-
-0.5
mA
Emitter cut-off current
IEBO
VEB = -4V
-
-
-0.5
mA
VCE(sat)
IC / IB= -5mA / -0.25mA
-
-
-0.3
V
DC current gain
hFE
VCE= -5V , IC= -1mA ,
100
250
600
-
Input resistance
R1
-
3.29
4.7
6.11
kW
Transition frequency
fT *1
VCE = -10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
Collector-emitter saturation voltage
Conditions
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.06 - Rev.C
Data Sheet
EMB3 / UMB3N / IMB3A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
-10
-100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE= -5V
-1
-0.1
Ta=100ºC
25ºC
-40ºC
-0.01
-0.001
0
-0.5
-1
-1.5
-2
BASE TO EMITTER VOLTAGE : VBE (V)
IB=
Ta=25ºC
-500μA
-450μA
-80
-400μA
-350μA
-300μA
-60
-250μA
-200μA
-40
-150μA
-100μA
-20
-50μA
0
0
-2
-4
-6
-8
0A
-10
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.C
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
D
EMT6
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas
DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.06 - Rev.C
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
D
A
e
c
x
Lp
A3
S A
e
l1
A1
y S
e1
A
b
HE
E
Q
L1
UMT6
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
MILIMETERS
MIN
MAX
1.55
0.40
0.65
Dimension in mm/inches
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5/6
INCHES
MIN
0
MAX
0.039
0.004
0.01
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.03
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
INCHES
MIN
MAX
0.06
-
0.016
0.026
2012.06 - Rev.C
Data Sheet
EMB3 / UMB3N / IMB3A
lDimensions (Unit : mm)
SMT6
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
6/6
INCHES
MIN
0.039
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
2012.06 - Rev.C
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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