Infineon BTS3134D Smart low side power switch Datasheet

Smart Low Side Power Switch
Power HITFET BTS 3134D
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
42
· Input Protection (ESD)
On-state resistance
RDS(on)
50
m
· Thermal shutdown
Nominal load current
I D(Nom)
3.5
A
• Green product (RoHS compliant)
Clamping energy
EAS
3
J
V
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
P / PG-TO252-3-11
· Analog driving possible
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
μC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
M
Drain
HITFET
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Datasheet
1
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Maximum Ratings at T j = 25 °C, unless otherwise specified 1)
Parameter
Symbol
Value
Drain source voltage
VDS
42
Drain source voltage for short circuit protection
VDS(SC)
30
Unit
V
T j = -40 ... +150 °C
IIN
Continuous input current
mA
-0.2V VIN 10V
no limit
VIN < -0.2V or VIN > 10V
Operating temperature
| IIN | 2
Tj
-40 ... +150
Storage temperature
Tstg
-55 ... +150
Power dissipation 4)
Ptot
W
T C = 85 °C
43
6cm 2
1.1
cooling area , T A = 85 °C
°C
Unclamped single pulse inductive energy 1)
EAS
3
J
Load dump protection VLoadDump2) = V A + VS
VIN = 0 and 10 V, t d = 400 ms, RI = 2 ,
VLD
65
V
2
kV
R L = 4.5 , VA = 13.5 V
Electrostatic discharge voltage (Human Body Model) VESD
according to ANSI/ESDA/JEDEC JS-001
(1.5 kΩ, 100 pF)
Thermal resistance
junction - case:
RthJC
SMD: junction - ambient
RthJA
@ min. footprint
@6
cm2
cooling area
1.5
K/W
115
3)
55
1 Not subject to production test, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
4 Not subject to production test, calculated by R
/R
and maximum allowed junction temperature
thJA
Datasheet
thJC
2
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Electrical Characteristics
Parameter
Symbol
at Tj = 25 °C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
V
-
1.5
10
μA
Characteristics
VDS(AZ)
Drain source clamp voltage
Tj = - 40 ... +150 °C, ID = 10 mA
Off-state drain current Tj = -40 ... +150 °C
IDSS
VDS = 32 V, VIN = 0 V
VIN(th)
Input threshold voltage
V
ID = 1.4 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 1.4 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
RDS(on)
VIN = 5 V, ID = 3 A, Tj = 25 °C
VIN = 5 V, ID = 3 A, Tj = 150 °C
m
-
45
60
-
75
100
VIN = 10 V, ID = 3 A, Tj = 25 °C
-
35
50
VIN = 10 V, ID = 3 A, Tj = 150 °C
-
65
90
RDS(on)
On-state resistance
ID(Nom)
Nominal load current 1)
Tj < 150 °C, VIN = 10 V, TA = 85 °C, SMD
Nominal load current 1)
μA
2)
ID(ISO)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150 °C
Current limit (active if VDS > 2.5 V) 3)
ID(lim)
VIN = 10 V, VDS = 12 V, tm = 200 μs
A
3.5
-
-
7.1
-
-
18
24
30
1 Not subject to production test, calculated by R
/RthJC and RDS(on)
thJA
2 @ 6 cm2 cooling area
3 Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
Datasheet
3
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Electrical Characteristics
Parameter
Symbol
at Tj = 25 °C, unless otherwise specified
Values
Unit
min.
typ.
max.
t on
-
60
100
t off
-
60
100
-dV DS/dt on
-
0.3
1.5
dV DS/dt off
-
0.7
1.5
Dynamic Characteristics
VIN to 90% I D:
R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
Turn-on time
R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V
70 to 50% Vbb:
R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
Slew rate on
R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V
μs
V/μs
Protection Functions1)
Thermal overload trip temperature
Tjt
150
175
-
°C
Input current protection mode
IIN(Prot)
80
160
300
μA
Input current protection mode
IIN(Prot)
-
130
300
EAS
3
-
-
J
VSD
-
1.0
-
V
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 3 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 15 A, tm = 250 μs, VIN = 0 V,
tP = 300 μs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Datasheet
4
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
D
Z
2
I IN
1
D
IN
ID
VDS
Vbb
HITFET
S
S
3
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V
IN
Gate Drive
Input
I
Source/
Ground
IN
I
D
T
t
t
t
j
t
Datasheet
5
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TC) resp.
Ptot = f(TA) @ R thJA=55 K/W
R ON=f(Tj); I D=3A; VIN=10V
3
100
m
max.
W
Rthjc = 1.5 K/W
RDS(on)
80
Ptot
2
SMD @ 6cm2
1.5
70
typ.
60
50
40
1
30
20
0.5
10
0
-50
-25
0
25
50
75
100
°C
0
-50
150
-25
0
25
50
75
100 125 °C
TA;TC
3 On-state resistance
4 Typ. input threshold voltage
R ON=f(Tj); ID =3A; VIN=5V
VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V
2
110
m
V
max.
90
1.6
80
VGS(th)
RDS(on)
175
Tj
typ.
70
1.4
1.2
60
1
50
0.8
40
0.6
30
20
0.4
10
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
6
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
5 Typ. transfer characteristics
6 Typ. short circuit current
ID =f(VIN ); VDS=12V; TJstart=25 °C
I D(lim) = f(Tj); VDS=12V
Parameter: V IN
30
A
A
I D(SC)
30
ID
20
20
Vin=10V
15
15
10
10
5
5
0
0
1
2
3
4
5
6
7
8
V
0
-50
10
5V
-25
0
25
50
75
100 125 °C
VIN
175
Tj
7 Typ. output characteristics
8 Typ. off-state drain current
ID =f(VDS ); TJstart =25 °C
IDSS = f(Tj )
Parameter: V IN
35
11
μA
max.
A
10V
9
7V
25
I DSS
8
ID
6V
7
5V
20
6
4V
5
15
4
10
Vin=3V
3
2
5
typ.
1
0
0
1
2
3
4
V
0
-50
6
VDS
Datasheet
-25
0
25
50
75
100 125 °C
175
Tj
7
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb =12 V, no heatsink
Parameter: Tjstart
Z thJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
40
2
K/W
A
D=0.5
-40°C
10
1
0.2
0.1
ZthJA
I D(lim)
30
25°C
25
0.05
10
0
0.02
0.01
20
85°C
15
10
10
-1
10
-2
150°C
5
0
0
Single pulse
1
2
3
10
5
ms
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
s
10
3
tp
t
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200μs
Parameter: TJstart
40
A
I D(lim)
30
-40°C
25
25°C
20
85°C
15
150°C
10
5
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
Datasheet
8
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Package Outlines
Package Outlines
6.5 +0.15
-0.05
A
0.15 MAX.
per side
2.3 +0.05
-0.10
0.5 +0.08
-0.04
B
(5)
0.9 +0.20
-0.01
0...0.15
0.8 ±0.15
(4.24) 1 ±0.1
9.98 ±0.5
6.22 -0.2
5.4 ±0.1
0.51 MIN.
1
3x
0.75 ±0.1
0.5 +0.08
-0.04
2.28
4.57
0.1 B
0.25
M
A B
All metal surfaces tin plated,
except area of cut.
GPT09277
Figure 1
PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Datasheet
9
Dimensions in mm
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3134D
Revision History
2
Revision History
Version
Rev. 1.4
Date
Changes
2012-03-07
page 2:
- added footnote “Not subject to production test, specified by design” for
chapter/table Maximum Ratings
- added footnote “Not subject to prod. test, calculated ...” for parameter Ptot
- updated ESD HBM standard in chapter “Maximum Ratings”
page 3:
- updated test condition ID for parameter input threshold voltage VIN(th)
- added footnote “Not subject to production test, calculated...” to the parameter
Nominal load current ID(nom), ID(ISO)
Rev. 1.3
2006-12-22
released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
Rev. 1.2
2006-12-11
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1
2006-08-08
released non automotive green version (ITS)
Rev. 1.0
2004-03-05
released production version
Datasheet
10
Rev. 1.4, 2013-03-07
Edition 2013-03-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2013.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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