Fairchild MMBT4401-D87Z Npn general pupose amplifier Datasheet

2N4401 / MMBT4401
2N4401
MMBT4401
C
E
C
B
TO-92
SOT-23
E
B
Mark: 2X
NPN General Pupose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
2N4401
625
5.0
83.3
*MMBT4401
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 2001 Fairchild Semiconductor Corporation
2N4401/MMBT4401, Rev A
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
60
V
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
2N4401 / MMBT4401
NPN General Purpose Amplifier
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
20
40
80
100
40
0.75
300
0.4
0.75
0.95
1.2
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small-Signal Current Gain
hoe
Output Admittance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
250
MHz
6.5
pF
30
pF
1.0
15
kΩ
0.1
8.0
x 10
40
500
1.0
30
µmhos
15
ns
ns
-4
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 30 V, VEB = 2 V,
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
20
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
3
(continued)
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C
te
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
2N4401 / MMBT4401
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Turn On and Turn Off Times
vs Collector Current
400
I B1 = I B2 =
Switching Times
vs Collector Current
400
Ic
320
TIME (nS)
V cc = 25 V
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
2N4401 / MMBT4401
NPN General Purpose Amplifier
(continued)
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
h ie
0
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics
8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT I C= 10mA
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
2.4
V CE = 10 V
I C = 10 mA
2
h re
h fe
1.6
hoe
1.2
0.8
0.4
0
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
Common Emitter Characteristics
1.3
I C = 10 mA
T A = 25oC
1.25
h fe
1.2
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
0
5
h ie
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
100
2N4401 / MMBT4401
NPN General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
16 V
Ω
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Timer
6.0 V
- 1.5 V
NOTE: BV EBO = 5.0 V
1k
30 V
Ω
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
37 Ω
2N4401 / MMBT4401
NPN General Purpose Amplifier
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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