Central CP517 Power transistor pnp - darlington chip Datasheet

PROCESS
CP517
Central
Power Transistor
TM
Semiconductor Corp.
PNP - Darlington Chip
PROCESS DETAILS
Process
EPITAXIAL BASE
Die Size
111 X 111 MILS
Die Thickness
10 MILS
Base Bonding Pad Area
20 X 30 MILS
Emitter Bonding Pad Area
20 X 26 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au/Cr/Ni/Au - 6,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
910
PRINCIPAL DEVICE TYPES
2N6040
2N6041
2N6042
2N6299
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP517
Typical Electrical Characteristics
R1 (1-August 2002)
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