AME AME5130

AME, Inc.
AME5130
n General Description
The AME5130 is a fixed off-time step-up DC/DC converter in a small 5-lead SOT-25 package.The AME5130
Micropower Step-Up DC/DC Converter
n Typical Application
L
10µH
V IN
2.5V-4.2V
is ideal for LCD panels requiring low current and high effi-
Option for
6LEDs
D
5
1
ciency as well as LED applications for cellular phone backlighting, PDAS,and other hand-held devices. The low
400ns off-time allows the use of tiny external compo-
V IN
CIN
4.7µF
Ceramic
ILED
SW
COUT
4.7µF
Ceramic
nents.
AME5130
AME5130 can drive up 8 white LEDs from a single Li-
>1.1V 4
Ion battery DC 2V to 5.5V; can be turned on by putting
RUN
0V
more than 1V at pin 4(RUN). To control LED brightness,
3
FB
GND
R2
80Ω
2
the LED current can be pulsed by applying a PWM (pulse
width modulated) signal with a frequency range of 100Hz
to 50KHz to the RUN pin.
* ILED =VFB/R2
n Features
Figure 1： Six White LEDs Application in Li-lon
Battery
l 0.7Ω internal switch
l Uses small surface mount components
l Adjustable output voltage up to 20V
l 2V to 5.5V input range
V IN
2.5V-4.2V
L
15µH
20V
20mA
D
l Input undervoltage lockout
l 0.01µA shutdown current
l Small 5-Lead SOT-25 package
5
1
VIN
CIN
4.7µF
Ceramic
4
R1
510K
SW
AME5130 FB
3
RUN
GND
2
COUT
4.7µF
Ceramic
R2
33K
n Applications
l
White LED Back-Lighting
l
Hand-held Devices
l
Digital Cameras
l
Portable Applications
l
LCD Bias Power
Figure 2： Typical 20V Application
1
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Function Block Diagram
L
D
VIN
CIN
VIN
COUT
SW
V OUT
Vref=1.23
R1
FB
+
Enable
Comp
-
+
CL
Comp
-
R2
400ns one
Shot
Current sensing
Internal
Soft Start
Driver
Under Voltage
Lockout
Logic
control
RUN
Figure 3： AME5130 Block Diagram
2
VOUT
GND
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Pin Configuration
SOT-25
Top View
5
4
AME5130
1. SW
2. GND
AME5130
3. FB
4. RUN
1
2
3
5. VIN
* Epoxy: Conductive
n Pin Description
Pin #
Pin Name
Pin Description
1
SW
Power Switch input.
This is the drain of the internal NMOS power switch. Minimize the metal trace area
connected to this pin to minimize EMI.
2
GND
Ground.
Tie directly to ground plane.
Output voltage feedback input.
Set the output voltage by selecting values for R1 and R2 using:
3
FB
 V

R1 = R 2 out − 1 
 1 . 23V

Connect the ground of the feedback network to an AGND(Analog Ground) plane which
should be tied directly to the GND pin.
4
RUN
Shutdown control input, active low.
The shutdown pin is an active low control. Tie this pin above 1V to enable the device.
Tie this pin below 0.4V to turn off the device.
5
VIN
Analog and Power input.
Input Supply Pin. Bypass this pin with a capacitor as close to the device as possible.
3
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Ordering Information
AME5130 x x x x x x
Special Feature
Output Voltage
Number of Pins
Package Type
Operating Temperature Range
Pin Configuration
Pin
Configuration
A
Operating
Package Type
Temperature Range
Number
of
Pins
Output Voltage
Special Feature
E: -40OC to 85OC
V: 5
ADJ: Adjustable
Z:
1. SW
2. GND
3. FB
4. RUN
5. VIN
E: SOT-2X
Lead free
n Ordering Information
Part Number
Marking*
Output Voltage
Package Operating Temp. Range
AME5130AEEVADJ
BCLww
ADJ
SOT-25
-40OC to +85OC
AME5130AEEVADJZ
BCLww
ADJ
SOT-25
-40OC to +85OC
Note: ww represents the date code and pls refer to Date Code Rule before Package Dimension.
* A line on top of the first letter represents lead free plating such as BCL.
Please consult AME sales office or authorized Rep./Distributor for the availability of package type.
4
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Absolute Maximum Ratings
Parameter
Symbol
Maximum
Unit
VIN
6
V
VRUN ,VFB
VIN
V
SW Voltage
VSW
VOUT+0.3
V
N-Channel Switch Sink Current
ISW
800
mA
Input Supply Voltage
RUN, VFB Voltages
ESD Classification
B
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
n Recommended Operating Conditions
Parameter
Rating
Unit
Ambient Temperature Range
-40 to +85
o
Junction Temperature
-40 to +125
o
C
C
n Thermal Information
Parameter
Package
Die Attached Symbol
Thermal Resistance*
(Junction to Case)
θJC
Maximum
Unit
81
o
C/W
Thermal Resistance
(Junction to Ambient)
SOT-25
Conductive
Internal Power Dissipation
(∆T = 100oC)
θJA
260
PD
400
mW
Maximum Junction Temperature
150
o
Lead Temperature (Soldering 10sec)
300
o
C
C
* The case point of θJC is on the center of Molding Compound.
5
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Electrical Specifications
VIN=2.2V, RUN = VIN, TA = 25oC Unless otherwise noted.
Parameter
Symbol
Device Disabled
Device Enabled
IQ
Shutdown
Test Condition
Typ
Max
FB = 1.3V
64
80
FB = 1.15V
69
90
RUN = 0V
0.01
2
1.199
1.23
1.261
V
490
550
610
mA
0.2
0.7
µA
5.5
V
1.6
Ω
Feedback Trip Point
VFB
Switch Current Limit
ICL
IOUT=20mA, VOUT=20V
FB Pin Bias Current
ΙΒ
FB = 1.23V
Input Voltage Range
VIN
Switch RDSON
Switch Off Time
Min
2
RDSON
0.7
TOFF
o
RUN = VIN , TJ = 25 C
RUN Pin Current
ISD
o
RUN = VIN , TJ = 125 C
RUN = GND
Switch Leakage Current
Input Undervoltage Lockout
Feedback Hysteresis
RUN LOW
(Shutdown)
RUN High
(Enable the device)
6
IL
UVP
Units
µA
400
ns
0
nA
15
nA
0
nA
0.05
ON/OFF Threshold
1.6
V
8
mV
VFB
Hysteresis
5.0
µΑ
VSW = 20V
0.4
V
RUN
Threshold
1
V
AME, Inc.
AME5130
n Electrical Specifications
The AME5130 features a constant off-time control
scheme. Operation can be best understood by referring
to Figure 3. When the voltage at the FB pin is less than
0.9V, the Enable Comp in Figure 3 enables the device
and the NMOS switch is turmed on pulling the SW pin to
ground. When the NMOS switch is on, current is supplied by the output capacitor C OUT. Once the current in
the inductor reaches the peak current limit, the 400ns
One Shot turns off the NMOS switch. The SW voltage
will then rise to the output voltage plus a diode drop and
the inductor current will begin to decrease as shown in
Figure 3. During this time the energy stored in the inductor is transferred to C OUT and the load. After the 400ns
off-time the NMOS switch is turned on and energy is
stored in the inductor again. This energy transfer from
the inductor to the output causes a stepping effect in
the output ripple.
This cycle is continued until the voltage at FB reaches
1.23V. When FB reaches this voltage, the enable comparator then disables the device turning off the NMOS
switch and reducing the Iq of the device to 64 µA. The
load current is then supplied solely by C OUT indicated
by the gradually decreasing slope at the output. When
the FB pin drops slightly below 1.23V, the enable comparator enables the device and begins the cycle described previously. The RUN pin can be used to turn off
the AME5130 and reduce the Iq to 0.01µA. In shutdown
mode the output voltage will be a diode drop lower than
the input voltage.
Micropower Step-Up DC/DC Converter
n Application Information
INDUCTOR SELECTION
The appropriate inductor for a given application is
calculated using the following equation:
 V − VIN(min) + VD 
TOFF
L =  OUT
ICL


Where VD is the schottky diode voltage, I CL is the
switch current limit found in the Typical Performance Characteristics section, and T OFF is the switch off time. When
using this equation be sure to use in minimum input voltage for the application, such as for battery powered applications.
Choosing inductors with low ESR decrease power
lossed and increase efficiency.
Care should be taken when choosing an inductor. For
applications that require an input voltage that approaches
the output voltage, such as when converting a Li-ion battery voltage to 5V, the 400ns off time may not be enough
time to discharge the energy in the inductor and transfer
the energy to the output capacitor and load. This can
cause a ramping effect in the inductor current waveform
and an increased ripple on the output voltage. Using a
smaller inductor will cause the I PK to increase and will
increase the output voltage ripple further. This can be
solved by adding a 4.7pF capacitor across the R1 feedback resistor (Figure 3) and slightly increasing the output capacitor. A smaller inductor can then be used to
ensure proper discharge in the 400ns off time.
DIODE SELECTION
To maintain high efficiency, the average current rating
of the schottky diode should be larger than the peak inductor current, I PK. Schottky diodes with a low forward
drop and fast switching speeds are ideal for increasing
efficiency in portable applications. Choose a reverse breakdown of the schottky diode larger than the output voltage.
7
AME, Inc.
AME5130
CAPACITOR SELECTION
Choose low ESR capacitors for the output to minimize
output voltage ripple. Multilayer ceramic capacitors are the
best choice. For most applications, a 1µF ceramic capacitor is sufficient. For some applications a reduction in output
voltage ripple can be achieved by increasing the output capacitor. Local bypassing for the input is needed on the
AME5130. Multilayer ceramic capacitors are a good choice
for this as well. A 4.7µF capacitor is sufficient for most applications. For additional bypassing, a 100nF ceramic capacitor can be used to shunt high frequency ripple on the input.
LAYOUT CONSIDERATIONS
The input bypass capacitor C IN, as shown in Figure 3,
must be placed close to the IC. This will reduce copper
trace resistance which effects input voltage ripple of the IC.
For additional input voltage filtering, a 100nF bypass capacitor can be placed in parallel with C IN to shunt any high
frequency noise to ground. The output capacitor, C OUT,
should also be placed close to the IC. Any copper trace
connections for the C OUT capacitor can increase the series
resistance, which directly effects output voltage ripple. The
feedback network, resistors R1 and R2, should be kept close
to the FB pin to minimize copper trace connections that
can inject noise into the system. The ground connection for
the feedback resistor network should connect directly to an
analog ground plane. The analog ground plane should tie
directly to the GND pin. If no analog ground plane is available, the ground connection for the feedback network should
tie directly to the GND pin. Trace connections made to the
inductor and schottky diode should be minimized to reduce
power dissipation and increase overall efficiency.
8
Micropower Step-Up DC/DC Converter
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Application Information
L
10µH
VIN
2.5V-4.2V
5
1
VIN
CIN
4.7µF
Ceramic
Option for
8LEDs
D
SW
COUT
1µF
Ceramic
COUT
1µF
Ceramic
AME5130
>1.1V 4
RUN
0V
FB 3
GND
R3
80Ω
R2
80Ω
2
Figure4: Eight White LEDs Application in Li-Ion Battery
L
2.2µH
VIN
2.5V-4.2V
5
1
VIN
C IN
4.7µF
Ceramic
4
R1
1M
SW
AME5130 FB
RUN
GND
5V
120mA
D
3
CF B
4.7pF
C OUT
4.7µF
Ceramic
R2
330k
2
Figure5: Li-Ion 5V Application
9
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Application Information
L
10µH
VIN
2.5V-4.5V
5
1
VIN
C IN
4.7µF
Ceramic
R1
240K
SW
AME5130 FB
4
12V
40mA
D
C OUT
4.7µF
Ceramic
3
RUN
R2
27K
GND
2
Figure6: Li-Ion 12V Application
L
10µH
VIN
5V
5
1
VIN
C IN
4.7µF
Ceramic
4
12V
145mA
D
R1
240K
SW
AME5130 FB
RUN
GND
3
R2
27K
2
Figure7: 5V to 12V Application
10
C OUT
4.7µF
Ceramic
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
Switch Current Limit vs. VIN
Efficiency vs. Load Current
800
90
V IN =4.2V
85
700
V IN =3.3V
80
650
E FFICIENCY (% )
Switch Cur rent Lim it (mA)
750
O
TA=25 C
600
550
500
VIN=2.5V
75
70
65
60
450
VOUT=20V
55
400
50
350
2
2.5
3
3.5
4
4.5
5
5.5
0.5
6
5
10
15
20
VIN(V)
VIN=5V
40
45
85
VIN=3.3V
EFFICIENCY (% )
V IN=2.5V
75
V IN=4.2V
90
V IN=4.2V
80
EFFICIENCY (% )
35
95
85
70
65
60
55
50
VIN=3.3V
80
75
VIN=2.5V
70
65
60
55
50
VOUT =12V
45
40
0.5
VOUT=5V
45
40
4
8
20
40
55
70
80
110 115
140 145
0.5
3
6
9
IOUT (mA)
20
35
50
80 110 140 160 190 220 250
IOUT (mA)
Enable Current vs. VIN (Part Switching)
Disable Current vs. VIN (Part Not Switching)
140
140
130
130
oC
Disable Cur rent (uA)
TA=25
120
Enable Cirrent (uA)
30
Efficiency vs. Load Current
Efficiency vs. Load Current
90
110
100
90
80
TA=85 oC
TA=-40 oC
70
60
TA=25o C
120
110
100
TA=85 oC
90
80
TA=-40 oC
70
60
50
50
40
25
IOUT (mA)
40
2
2
2.5
3
3.5
4
VIN (V)
4.5
5
5.5
6
2.5
3
3.5
4
4.5
5
5.5
6
V IN (V)
11
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
SHDN Threshold vs. VIN
1.05
TA=-40 o C
1.0
1.1
0.95
1
0.9
0.9
oC
T A=25
0.85
0.8
Rdson (Ω )
SHDN THRESHO LD (V )
Switch Rdson vs. VIN
1.2
TA=85 oC
0.75
0.7
0.7
0.6
0.5
0.65
0.6
0.4
0.55
0.3
0.5
TA=85 oC
TA=25 o C
0.8
2
2.5
3
3.5
4
4.5
5
5.5
TA=-40oC
0.2
6
2
VIN (V)
2.5
3
3.5
90
90
85
TA=25oC
85
6 LEDs
80
IOUT = 15mA
75
5.5
6
TA=25oC
80
8 LEDs
IOUT = 30mA
75
70
70
2.5
2
3
3.5
4
4.5
65
5
2
2.5
3
3.5
Vin (V)
0.36
V
0.34
1.23
0.33
0.32
µA
0.31
1.21
0.30
1.20
-40
-20
0
25
5
55
Junction Temperature (o C)
0.29
85
12.4
12.3
OUTPUT VOLTAGE (V)
0.35
1.22
4.5
Output Voltage vs Load Current
Feedback Biascur rent (uA)
1.25
1.24
4
Vin (V)
FB Trip Point and FB Pin Current vs
Temperature
Feedback Trip Point (V)
5
4.5
Efficiency vs. VIN
95
EFFICIENCY(%)
EFFICIENCY(%)
Efficiency vs. VIN
12
4
VIN (V)
VIN =4.2V
C OUT =4.7uF
VOUT=12V
12.2
VIN =2.5V
12.1
V IN =3.3V
VIN =5V
12
11.9
11.8
0.5
4
8
20
40
50
70
IOUT (mA)
80
110 115 145
150
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
Typical Switching Waveform
Typical Switching Waveform
1
1
2
2
3
3
VOUT = 19.4V, VIN = 4.2V； 6 LEDs
VOUT = 13.25V, VIN = 4.2V； 8 LEDs
IOUT = 15mA
IOUT = 30mA
1) VSW, 20V / div, DC
1) VSW, 20V / div, DC
2) Inductor current, 500mA / div, DC
2) Inductor current, 500mA / div, DC
3) VOUT, 100mV / div, AC
3) VOUT, 100mV / div, AC
Start-Up/Shutdown
Start-Up/Shutdown
1
2
3
3
1
2
VOUT = 20V, VIN = 2.5V
VOUT = 20V, VIN = 2.5V
1) Vout, 100mV/div.AC
1) RUN, 1V/div,DC
2) Vsw,20V/div,DC
2) VOUT, 20V/div,DC
3) Inductor Current 500mA/div,DC
3) IL, 200mA/div,DC
T=20µs/div
T=400µs/div
RL=1.3kΩ
13
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Date Code Rule
Marking
Date Code
Year
A
A
A
W
W
xxx0
A
A
A
W
W
xxx1
A
A
A
W
W
xxx2
A
A
A
W
W
xxx3
A
A
A
W
W
xxx4
A
A
A
W
W
xxx5
A
A
A
W
W
xxx6
A
A
A
W
W
xxx7
A
A
A
W
W
xxx8
A
A
A
W
W
xxx9
n Tape and Reel Dimension
SOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
14
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Package Dimension
SOT-25
Top View
Side View
SYMBOLS
D
MILLIMETERS
MAX
MIN
MAX
L
MIN
INCHES
1.20REF
E
θ1
S1
A1
0.00
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
e
H
e
2.60
A
θ1
b
S1
0.07480 BSC
3.00
0.37BSC
L
Front View
0.0472REF
0
o
10
0.95BSC
0.10236 0.11811
0.0146BSC
o
0o
10o
0.0374BSC
A1
H
A
15
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , October 2005
Document: 1015-DS5130-C
Corporate Headquarter
U.S.A. (Subsidiary)
AME, Inc.
Analog Microelectronics, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
3100 De La Cruz Blvd., Suite 201
Taipei 114, Taiwan.
Tel: 886 2 2627-8687
Santa Clara, CA. 95054-2046
Tel : (408) 988-2388
Fax: 886 2 2659-2989
Fax: (408) 988-2489