ASI BM100-28 Npn silicon rf power transistor Datasheet

BM100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM100-28 is Designed for high
power VHF Applications up to 200 MHz.
PACKAGE STYLE .500 6L FLG
FEATURES:
• Common Emitter
• PG = 8.5 dB at 20 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
20 A
VCEO
33 V
VCES
65 V
VEBO
4.0 V
PDISS
270 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
0.65 C/W
O
O
O
O
O
O
CHARACTERISTICS
1 = COLLECTOR
3&4 = EMITTER
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
2 = BASE
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
33
V
BVCES
IC = 100 mA
65
V
BVEBO
IE = 5.0 mA
4.0
V
hFE
VCE = 5.0 V
10
---
CCB
VVB = 28 V
PG
ηC
VCC = 28 V
IC = 1.0 A
f = 1.0 MHz
POUT = 100 W
f = 175 MHz
200
pF
60
dB
%
8.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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