Infineon IPA60R385CP Coolmos power transistor Datasheet

IPA60R385CP
CoolMOS® Power Transistor
Product Summary
Features
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CoolMOS is specially designed for:
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Type
Package
Ordering Code
Marking
BI9/)K,1.<I
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Maximum ratings, 6IT [ Y
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Parameter
DCI>CJDJH9G6>C 8
JGG: CI+#
Value
Symbol Conditions
I=
T < Y
T < 2')
I =%af]dV
T < Y
K6A6C8
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Unit
+0
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,
9
.)
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v+)
O
v,)
3
f % O
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IPA60R385CP
Maximum ratings, 6IT [ Y
JCA: HHDI=: GL>H: HE: 8
>;>: 9
Parameter
DCI>CJDJH9>D9: ;DGL6G9 8
JGG: CI+#
Value
Symbol Conditions
IL
Unit
2
9
T < Y
!>D9: EJAH: 8
JGG: CI,#
I L%af]dV
+0
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Uv (Ut
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Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
&
&
-
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&
&
1)
B B >C ;GDB 8
6H: ;DG H
&
&
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&
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*
&
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&
Thermal characteristics
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: 69H
Electrical characteristics, 6IT [ Y
D(P
JCA
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Static characteristics
!G6>C HDJG8
: 7G: 6@9DLC KDA
I6<:
V ";K#=LL V @L
3 I = $ 6I: I=G: H=DA9 KDAI6<:
V @L"eY#
V =L6V @L I =
5: GD <6I: KDA
I6<: 9G6>C 8
JGG: CI
I =LL
V =L 3 V @L
T [ Y
3
V =L 3 V @L
T [ Y
3
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&
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R =L"`_#
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&
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&
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IPA60R385CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
&
02)
&
&
,1
&
&
,/
&
Dynamic characteristics
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C `"Vc#
cV]ReVU/#
V @L 3 V =L f * % O
V @L 3 V =L
ID 3
3
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6E68
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t U"`_#
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tc
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&
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&
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&
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&
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&
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&
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&
9
$ 6I:
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V == 3
V @L 3 I = R @ "
_d
=6G68
I: G>HI>8
H
V == 3 I = V @L ID 3
_<
Reverse Diode
!>D9: ;DGL6G9 KDAI6<:
V L=
/ : K: GH: G: 8
DK: GN I>B :
t cc
/ : K: GH: G: 8
DK: GN 8
=6G<:
Q cc
- : 6@G: K: GH: G: 8
DK: GN 8
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I cc^
V @L 3 I ? T [ Y
V K 3 I ?6I L
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: V =L >HG>H>C< ;GDB
ID V =LL'
0#
C `"ec# >H6 ;>M: 9 8
6E68
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1 Power dissipation
2 Safe operating area
P e`e6W"T <#
I =6W"V =L T < Y D 6)
E6G6B : I: G t a
102
35
A>B >I: 9 7N DC HI6I:
cVdZdeR_TV
30
[H
25
1
20
I D [A]
P tot [W]
10
[H
[H
B H
15
100
B H
10
=<
5
0
10
0
40
80
120
-1
160
100
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z eYC<6W"t I#
I =6W"V =L T [ Y
E6G6B : I: G D=t a(T
E6G6B : I: G V @L
101
25
3
3
3
)'.
20
3
Z thJC [K/W]
100
)'+
3
15
I D [A]
)'*
)').
)')+
10-1
3
10
)')*
3
H>C<A: EJAH:
5
3
0
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t p [s]
/: K 0
5
10
15
20
V DS [V]
E6<: IPA60R385CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I =6W"V =L T [ R =L"`_#6W"I = T [ Y
E6G6B : I: G V @L
Y
E6G6B : I: G V @L
2.4
16
3
3
14
3
3
2
3
12
3
8
R DS(on) [ ]
I D [A]
10
3
6
1.6
3
3
3
3
1.2
3
3
4
3
0.8
2
0.4
0
0
5
10
15
0
20
5
10
15
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R =L"`_#6W"T [ I = V @L I =6W"V @L P
V =Ll7+lI =lR =L"`_#^Ri
3
E6G6B : I: G T [
1.2
40
36
Y 1
32
28
24
I D [A]
R DS(on) [ ]
0.8
0.6
Y 16
0.4
20
eja
12
8
0.2
4
0
0
-60
-20
20
60
100
140
180
2
4
6
8
10
V GS [V]
T j [°C]
/: K 0
E6<: IPA60R385CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V @L6W"Q XReV I = EJAH: 9
I ?6W"V L=#
E6G6B : I: G V ==
E6G6B : I: G T [
102
10
8
3
3
101
Y
Y
Y
I F [A]
V GS [V]
6
4
100
Y
2
0
10-1
0
5
10
15
20
0
0.5
1
Q gate [nC]
2
V SD [V]
11 Avalanche energy
E 9L6W"T [ I = V == 1.5
12 Drain-source breakdown voltage
3
V ;K"=LL#6W"T [ I =
250
B 700
200
660
E AS [mJ]
V( BR)DSS [V]
150
100
620
580
50
0
540
20
60
100
140
180
T j [°C]
/: K -60
-20
20
60
100
140
180
T j [°C]
E6<: IPA60R385CP
13 Typ. capacitances
14 Typ. Coss stored energy
C 6W"V =L V @L
E `dd= W(V =L)
3 f * % O
104
6
5
<Zdd
103
E oss [µJ]
C [pF]
4
102
<`dd
3
2
10
1
1
<cdd
100
0
)
*))
+))
,))
-))
.))
V DS [V]
/: K 0
100
200
300
400
500
600
V DS [V]
E6<: IPA60R385CP
Definition of diode switching characteristics
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PG-TO220-3-31/TO220-3-11: Outline/ Fully isolated package (2500VAC; 1 minute)
!>B : CH>DCH>C B B >C8
=: H
/: K E6<: IPA60R385CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
"hhh'Z_WZ_V`_'T`^#'
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
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