isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF633 ·FEATURES ·RDS(on) =0.6Ω ·8A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT 1.67 ℃/W 80 ℃/W Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF633 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 150 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance TYP MAX UNIT V 2 4 V 0.6 Ω ±500 nA VDS= 150V; VGS=0 250 uA IS= 9A; VGS=0 2.0 V VDS=25V,VGS=0V, F=1.0MHz 600 pF 250 pF 80 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr PARAMETER CONDITIONS MAX UNIT 30 ns 50 ns Turn-off Delay Time 50 ns Fall Time 40 ns Turn-on Delay Time Rise Time MIN TYP VDD=90V,ID=9.0A RG=9.1Ω Td(off) Tf isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn