MOTOROLA MJE243 4 ampere power transistors complementary silicon 100 volts 15 watt Datasheet

 Order this document
by MJE243/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for low power audio amplifier and low–current, high–speed switching
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc
hFE = 40 – 200
hFE = 40 – 120 — MJE243, MJE253
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
*Motorola Preferred Device
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4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate @ 25_C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
VCB
100
Vdc
100
Vdc
VEB
IC
7.0
Vdc
4.0
8.0
Adc
IB
PD
10
Adc
15
0.12
Watts
W/ac
PD
1.5
0.012
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
θJA
8.34
_C/W
83.4
_C/W
CASE 77–08
TO–225AA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
140
TA
PD, POWER DISSIPATION (WATTS)
TC
PD, POWER DISSIPATION (WATTS)
Thermal Resistance, Junction to Ambient
0
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
—
Vdc
—
—
0.1
0.1
—
0.1
40
15
180
—
—
—
0.3
0.6
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCE = 100 Vdc, IE = 0, TC = 125_C)
ICBO
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
IEBO
µAdc
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
—
1.8
Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.5
Vdc
fT
40
—
MHz
Cob
—
50
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
VCC
+ 30 V
1K
SCOPE
RB
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
Figure 2. Switching Time Test Circuit
2
tr
100
0
t, TIME (ns)
+11 V
– 9.0 V
500
300
200
RC
25 µs
50
30
20
td
10
5
3
2
1
0.01
NPN MJE243
PNP MJE253
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (AMPS)
3
5
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
10
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
P(pk)
θJC(t) = r(t) θJC
θJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0.1
0.07
0.05
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
100 µs
5.0
2.0
1.0 ms
1.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.5
0.2
0.1
0.05
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
500 µs
5.0 ms
v
0.02
0.01
1.0
MJE243/MJE253
50 70 100
2.0 3.0
5.0 7.0 10
20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
10K
200
ts
t, TIME (ns)
1K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
TJ = 25°C
100
C, CAPACITANCE (pF)
5K
3K
2K
500
300
200
100
50
30
20
10
0.01
Cib
70
50
30
Cob
20
tf
MJE243 (NPN)
MJE253 (PNP)
NPN MJE243
PNP MJE253
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
3
5
10
10
1.0
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
50 70 100
Figure 7. Capacitance
3
NPN
MJE243
PNP
MJE253
500
VCE = 1.0 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
300
200
200
TJ = 150°C
25°C
100
70
50
– 55°C
30
20
10
7.0
5.0
0.04 0.06
0.1
1.0
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
25°C
– 55°C
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
4.0
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
100
70
50
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 8. DC Current Gain
1.4
1.4
TJ = 25°C
1.2
1.2
1.0
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
IC/IB = 10
0.4
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
0.4
IC/IB = 10
5.0
5.0
0.2
0.2
VCE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
VCE(sat)
0
0.04 0.06
0.1
4.0
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
0.6
1.0
2.0
4.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
+ 2.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
+ 2.5
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 1.0
+ 0.5
*θVC FOR VCE(sat)
0
– 55°C to 25°C
– 0.5
– 1.0
– 1.5
– 2.0
25°C to 150°C
25°C to 150°C
θVB FOR VBE
– 2.5
0.04 0.06
0.1
– 55°C to 25°C
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
+ 2.5
+ 2.0
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 1.0
+ 0.5
25°C to 150°C
*θVC FOR VCE(sat)
0
– 55°C to 25°C
– 0.5
– 1.0
– 1.5
25°C to 150°C
θVB FOR VBE
– 55°C to 25°C
– 2.0
– 2.5
0.04 0.06
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA
ISSUE V
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJE243/D*
MJE243/D
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