June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features 75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP7052 VDSS Drain-Source Voltage 50 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 50 V VGSS Gate-Source Voltage - Continuous ±20 V - Nonrepetitive (tP < 50 µs) ID Drain Current NDB7052 ±40 - Continuous 75 - Pulsed 225 PD Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Temperature Range Derate above 25°C Units A 150 W 1 W/°C -65 to 175 °C 1 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case Rθ JA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation NDP7052 Rev.B1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 550 mJ 75 A DRAIN-SOURCE AVALANCHE RATINGS (Note) WDSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V o V mV/oC 57 TJ = 125°C 10 µA 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note) ∆VGS(th)/∆TJ Gate Threshold VoltageTemp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 37.5 A 2 TJ = 125°C mV/oC -5.2 1.4 TJ = 125°C 2.2 3 1.55 2.4 0.008 0.01 0.011 0.018 60 V Ω ID(on) On-State Drain Current VGS = 10 V, VDS= 10 V gFS Forward Transconductance VDS = 10 V, ID = 37.5 A 52 A S VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3400 pF 1300 pF 460 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time 15 30 nS tr Turn - On Rise Time 147 250 nS tD(off) Turn - Off Delay Time 85 150 nS tf Turn - Off Fall Time 165 300 nS Qg Total Gate Charge 117 160 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 75 A, VGS = 10 V, RGEN = 5 Ω VDS = 24 V, ID = 37.5 A, VGS = 10 V 12 nC 46 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage 75 A 225 A VGS = 0 V, IS = 13 A (Note) 0.9 1.3 V trr Reverse Recovery Time VGS = 0 V, IF = 37.5 A, 75 150 ns Irr Reverse Recovery Current dIF/dt = 100 A/µs 4 10 A Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7052 Rev.B1 Typical Electrical Characteristics V GS = 10V 7.0 2.5 6.0 5.5 R DS(on) , NORMALIZED 5.0 80 4.5 60 4.0 40 20 0 3.5 0 0.5 V DS 1 1.5 2 , DRAIN-SOURCE VOLTAGE (V) 2.5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 100 V GS =4.0V 2 4.5 5.0 0 20 40 60 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 1.8 ID=37.5A R DS(ON) , ON-RESISTANCE (OHM) V GS = 10V 1.6 1.4 1.2 1 0.8 0.6 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 0.04 0.03 0.02 125°C 0.01 0 175 Figure 3. On-Resistance Variation with Temperature. 25°C 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 60 60 V DS = 10V 50 40 30 20 T = -55°C J 25°C 125°C 10 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 Figure 4. On Resistance Variation with Gate-To- Source Voltage. I S , REVERSE DRAIN CURRENT (A) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10.0 I D =37.5A 0.4 -50 ID , DRAIN CURRENT (A) 8.0 I D , DRAIN CURRENT (A) 2 1 7.0 1 Figure 1. On-Region Characteristics. 0 6.0 6.5 0.5 3 5.5 1.5 4.5 5 VGS =0V 10 5 TJ = 125°C 1 0.5 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP7052 Rev.B1 Typical Electrical Characteristics (continued) 6000 I D = 37.5A VDS = 12V 24V Ciss 48V 8 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 2000 Coss 1000 Crss 500 f = 1 MHz VGS = 0V 2 200 0 0 20 40 60 80 100 120 1 5 140 10 20 50 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 8.Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 2000 400 100 R DS (O N 100 it Lim ) 1ms 10 50 10 20 2 1 ms s VGS = 10V SINGLE PULSE Rθ JC= 1 o C/W TC = 25 °C 0.5 0.5 1 SINGLE PULSE RθJC =1° C/W TC = 25°C 1500 DC 10 5 0m µs POWER (W) I D , DRAIN CURRENT (A) 200 1000 500 3 5 10 20 30 0 0.1 80 0.3 1 3 10 30 100 300 1,000 SINGLE PULSE TIME (mS) V DS , DRAIN-SOURCE VOLTAGE (V)) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 1 0.5 0.3 D = 0.5 R θ JC (t) = r(t) * RθJC RθJC = 1°C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 Duty Cycle, D = t1 /t2 Single Pulse 0.01 0.01 t2 TJ - TC = P * R θJC (t) 0.05 0.1 0.5 1 5 10 50 100 500 1000 t 1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. NDP7052 Rev.B1 NDP7052 Rev.B1 NDP7052 Rev.B1