ADPOW APTGT75TDU60P Triple dual common source trench field stop igbt power module Datasheet

APTGT75TDU60P
Triple Dual Common Source
Trench + Field Stop IGBT®
Power Module
G3
E1
G5
E5
E3
E3/E4
E1/E2
E5/E6
E2
E4
E6
G2
G4
G6
C2
C4
C1
E1/E2
C2
C6
C3
C5
G1
G3
E1
E3
E3/E4
G5
E5/E6
E5
E2
E4
E6
G2
G4
G6
C4
C6
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
100
75
140
±20
250
150A @ 550V
Unit
V
A
May, 2005
G1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C5
C3
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT75TDU60P – Rev 0,
C1
VCES = 600V
IC = 75A @ Tc = 80°C
APTGT75TDU60P
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 75A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Test Conditions
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
Min
5.0
1.5
1.7
5.8
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
4620
300
140
110
45
200
40
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
R G = 12Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
R G = 12Ω
Test Conditions
Typ
pF
ns
120
50
250
60
1.3
2.6
Min
Typ
ns
mJ
Max
600
Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=600V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
trr
Reverse Recovery Time
IF = 75A
VR = 300V
Qrr
Reverse Recovery Charge
di/dt =2000A/µs
APT website – http://www.advancedpower.com
Unit
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
V
250
500
75
1.6
1.5
125
220
3.6
7.6
µA
A
2
V
ns
µC
May, 2005
Symbol Characteristic
2-5
APTGT75TDU60P – Rev 0,
Electrical Characteristics
APTGT75TDU60P
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.60
0.98
Unit
°C/W
V
175
125
100
5
250
°C
N.m
g
Package outline (dimensions in mm)
APT website – http://www.advancedpower.com
3-5
APTGT75TDU60P – Rev 0,
May, 2005
5 places (3:1)
APTGT75TDU60P
Typical Performance Curve
Output Characteristics (VGE =15V)
150
Output Characteristics
150
TJ=25°C
VGE =19V
T J = 150°C
125
125
VGE=13V
100
TJ=150°C
IC (A)
IC (A)
T J=125°C
100
75
VGE=15V
75
50
50
25
25
VGE =9V
T J=25°C
0
0
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
5
T J=25°C
125
E (mJ)
IC (A)
75
T J=125°C
TJ =150°C
25
7
8
9
VGE (V)
3
10
11
25
75
100
125
150
Reverse Bias Safe Operating Area
175
150
Eon
125
IC (A)
E (mJ)
50
IC (A)
Eoff
Eoff
100
75
50
Eon
2
Eon
Er
0
12
6
4
Eoff
0
V CE = 300V
V GE =15V
I C = 75A
T J = 150°C
8
3.5
2
Switching Energy Losses vs Gate Resistance
10
3
Eon
T J=25°C
6
2.5
1
0
5
1.5
2
VCE (V)
VCE = 300V
VGE = 15V
RG = 12Ω
T J = 150°C
4
100
50
1
Energy losses vs Collector Current
Transfert Characteristics
150
0.5
VGE =15V
T J=150°C
RG=12Ω
25
Er
0
0
0
10
20 30 40 50 60
Gate Resistance (ohms)
70
80
0
100
200
300 400
V CE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.5
0.4
0.3
0.2
0.1
IGBT
0.9
0.7
May, 2005
0.6
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT website – http://www.advancedpower.com
4-5
APTGT75TDU60P – Rev 0,
Thermal Impedance (°C/W)
0.7
APTGT75TDU60P
Forward Characteristic of diode
150
100
VCE=300V
D=50%
RG=12Ω
TJ =150°C
ZCS
80
ZVS
125
100
Tc=85°C
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
40
75
T J=125°C
50
Hard
switching
20
25
0
0
TJ =150°C
T J=25°C
0
20
40
60
80
100
0
0.4
0.8
IC (A)
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
1.2
Diode
1
0.8
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT75TDU60P – Rev 0,
May, 2005
0
0.00001
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