MCNIX MX26C1000ATC-10 1m-bit [128k x 8] cmos multiple-time-programmable-eprom Datasheet

INDEX
MX26C1000A
1M-BIT [128K x 8] CMOS
MULTIPLE-TIME-PROGRAMMABLE-EPROM
FEATURES
•
•
•
•
•
•
•
128K x 8 organization
+5V operating power supply
+12.75V program/erase voltage
Electric erase instead of UV light erase
Fast access time: 70/90/100/120/150 ns
Totally static operation
Completely TTL compatible
•
•
•
•
Operating current: 30mA
Standby current: 100uA
100 minimum erase/program cycles
Package type:
- 32 pin PDIP
- 32 pin SOP
GY
O
L
- 32 pin PLCC
NO
- 32 pin TSOP(I)
ECH
DT
E
ENT
T
A
P
GENERAL DESCRIPTION
single pulse. The MX26C1000A supports an intelligent
quick pulse programming algorithm which can result in a
programming time of less than 30 seconds.
PIN CONFIGURATIONS
BLOCK DIAGRAM
A7
1
32
CE
30
29
A13
A8
A9
MX26C1000A
9
25
OE
A1
A10
A0
A0~A16
ADDRESS
INPUTS
A11
A2
CE
21
20
Q5
Q4
17
Q7
VCC
GND
.
.
.
.
.
.
.
.
Y-DECODER
X-DECODER
.
.
.
.
.
.
.
.
Y-SELECT
1M BIT
CELL
MAXTRIX
VPP
PIN DESCRIPTION
TSOP
A3
A2
A1
A0
Q0
Q1
Q2
GND
Q3
Q4
Q5
Q6
Q7
CE
A10
OE
Q0~Q7
Q6
13
14
Q3
Q0
OUTPUT
BUFFERS
A14
A5
A4
CONTROL
LOGIC
OE
A6
A3
This MTP EPROMTM is packaged in industry standard 32
pin dual-in-line packages, 32 pinPLCC packages or 32
pin TSOP packages and 32 pin SOP packages.
NC
VCC
A16
A15
4
VPP
5
GND
VCC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
A12
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Q2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Q1
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
PLCC
MX26C1000A
PDIP/SOP
PGM
The MX26C1000A is a 12.75V/5V, 1M-bit MTP
EPROMTM (Multiple Time Programmable Read Only
Memory). It is organized as 128K words by 8 bits per
word, operates from a + 5 volt supply, has a static
standby mode, and features fast address location
programming. It is designed to be reprogrammed and
erased by an EPROM programmer or on-board. All
programming/erasing signals are TTL levels, requiring a
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
P/N: PM0454
MX261000A
Patent#: US#5,526,307
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A4
A5
A6
A7
A12
A15
A16
VPP
VCC
PGM
NC
A14
A13
A8
A9
A11
1
SYMBOL
PIN NAME
A0~A16
Address Input
Q0~Q7
Data Input/Output
CE
Chip Enable Input
OE
Output Enable Input
VPP
Program Supply Voltage
NC
No Internal Connection
VCC
Power Supply Pin (+5V)
GND
Ground Pin
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
FUNCTIONAL DESCRIPTION
ERASE MODE
When the MX26C1000A is delivered, or it is erased, the
chip has all 1000K bits in the "ONE", or HIGH state.
"ZEROs" are loaded into the MX26C1000 through the
procedure of programming.
The MX26C1000A is erased by an EPROM programmer
or in-system. The device is set up in erase mode when
the A9 = VPP = 12.75V are applied, with VCC = 5V and
PGM = VIL.(Algorithm shown in Figure 3). Erase time
is around 1sec. If the erase is not verified, an additional
erase processes will be repeated for a maximum of 200
times.
PROGRAMMING MODE
PROGRAMMING ALGORITHM
The MX26C1000A is programmed by an EPROM
programmer or on-board. The device is set up in the
programming mode when the programming voltage VPP
= 12.75V is applied, with VCC = 5 V and PGM = VIH
(Algorithm shown in Figure 1). Programming is achieved
by applying a single TTL low level 25us pulse to the PGM
input after addresses and data lines are stable. If the
data is not verified, additional pulses are applied for
a maximum of 20 pulses. After the data is verified, one
25us pulse is applied to overprogram the byte so that
program margin is assured. This process is repeated
while sequencing through each address of the device.
When programming is completed, the data at all the
address is verified at VCC = VPP = 5V ± 10%.
PROGRAM INHIBIT MODE
Programming of multiple MX26C1000s in parallel with
different data is also easily accomplished by using the
Program Inhibit Mode. Except for CE and OE, all like
inputs of the parallel MX26C1000 may be common. A
TTL low-level program pulse applied to an MX26C1000A
CE input with VPP = 12.75 ± 0.25 V and PGM LOW will
program that MX26C1000A. A high-level CE input
inhibits the other MX26C1000A from being programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed bits
to determine that they were correctly programmed.
Verification should be performed with OE and CE, at VIL,
PGM at VIH, and VPP at its programming voltage.
The VCC supply of the MXIC On-Board Programming
Algorithm is designed to be 5V ± 10% particularly to
faciliate the programming operation under the on-board
application environment. But it can also be implemented
in an industrial-standard EPROM programmer.
ERASE VERIFY MODE
Verification should be performed on the erased chip to
determine that the whole chip(all bits) was correctly
erased. Verification should be performed with OE and
CE at VIL, PGM at VIH, and VCC = 5V, VPP = 12.5V
COMPATIBILITY WITH MX27C1000 FAST PROGRAMMING
ALGORITHM
Besides the On-Board Programming Algorithm, the Fast
Programming Algorithm of MX27C1000 also applies to
MX26C1000A. MXIC Fast Algorithm is the conventional
EPROM programming algorithm and is available in
industrial-standard EPROM programmers. A user of
industrial-standard EPROM programmer can choose
either of the algorithms base on his preference.
AUTO IDENTIFY MODE
The auto identify mode allows the reading out of a binary
code from an MTP that will identify its manufacturer and
device type. This mode is intended for use by the
programming equipment for the purpose of automatically
matching the device to be programmed with its
corresponding programming algorithm. This mode is
functional in the 25°C ± 5°C ambient temperature range
that is required when programming the MX26C1000A.
The device is set up in the fast programming mode when
the programming voltage VPP = 12.75V is applted, with
VCC = 6.25V and PGM = VIL(or OE = VIH)(Algorithm
is shown in Figure 2). The programming is achieved
by applying a single TTL low level 25~100us pulse is
applied for a maximum of 25 pulses. This process is
repeated while sequencing through each address of the
device. When the programming mode is completed, the
data in all address is verified at VCC = VPP = 5V ± 10%.
P/N: PM0454
Patent#: US#5,526,307
To activate this mode, the programming equipment must
force 12.75V on address line A9 of the device. Two
2
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
identifier bytes may then be sequenced from the device
outputs by toggling address line A0 from VIL to VIH. All
other address lines must be held at VIL during auto
identify mode.
Byte 0 ( A0 = VIL) represents the manufacturer code,
and byte 1 (A0 = VIH), the device identifier code. For
the MX26C1000A, these two identifier bytes are given
in the Mode Select Table. All identifiers for the
manufacturer and device codes will possess odd parity,
with the MSB (DQ7) defined as the parity bit.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions,
transient current peaks are produced on the rising and
falling edges of Chip Enable. The magnitude of these
transient current peaks is dependent on the output
capacitance loading of the device. At a minimum, a 0.1
uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be used
between VCC and GND for each of the eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
READ MODE
The MX26C1000A has two control functions, both of
which must be logically satisfied in order to obtain data
at the outputs. Chip Enable (CE) is the power control
and should be used for device selection. Output Enable
(OE) is the output control and should be used to gate
data to the output pins, independent of device selection.
Assuming that addresses are stable, address access
time (tACC) is equal to the delay from CE to output (tCE).
Data is available at the outputs tOE after the falling edge
of OE, assuming that CE has been LOW and addresses
have been stable for at least tACC - tOE.
STANDBY MODE
The MX26C1000A has a CMOS standby mode which
reduces the maximum VCC current to 100 uA. It is placed
in CMOS standby when CE is at VCC ± 0.3 V. The
MX26C1000A also has a TTL-standby mode which
reduces the maximum VCC current to 1.5 mA. It is placed
in TTL-standby when CE is at VIH. When in standby
mode, the outputs are in a high-impedance state,
independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a twoline control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
P/N: PM0454
Patent#: US#5,526,307
3
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
MODE SELECT TABLE
PINS
MODE
CE
OE
PGM
A0
A9
VPP
OUTPUTS
Read
VIL
VIL
X
X
X
VCC
DOUT
Output Disable
VIL
VIH
X
X
X
VCC
High Z
Standby (TTL)
VIH
X
X
X
X
VCC
High Z
Standby (CMOS)
VCC
X
X
X
X
VCC
High Z
Program
VIL
VIH
VIL
X
X
VPP
DIN
Program Verify
VIL
VIL
VIH
X
X
VPP
DOUT
Erase
VIL
VIH
VIL
X
VPP
VPP
HIGH Z
Erase Verify
VIL
VIL
VIH
X
X
VPP
DOUT
Program Inhibit
VIH
X
X
X
X
VPP
High Z
Manufacturer Code
VIL
VIL
X
VIL
VH
VCC
C2H
Device Code(26C1000)
VIL
VIL
X
VIH
VH
VCC
D2H
NOTES: 1. VH = 12.0 V ± 0.5 V
2. X = Either VIH or VIL(For auto select)
3. A1 - A8 = A10 - A16 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during
programming.
FIGURE 1. PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 5V
VPP = 12.75V
X=0
PROGRAM ONE 25us PULSE
INCREMENT X
INTERACTIVE
SECTION
YES
X = 20 ?
NO
FAIL
VERIFY BYTE
?
PROGRAM ONE 25us PULSE
PASS
NO
LAST ADDRESS
INCREMENT ADDRESS
FAIL
PROGRAM ONE 25us PULSE
YES
VCC = VPP = 5V
VERIFY SECTION
VERIFY ALL BYTES
?
FAIL
DEVICE FAILED
PASS
DEVICE PASSED
P/N: PM0454
Patent#: US#5,526,307
4
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
FIGURE 2. COMPATIBILITY WITH MX27C1000 FAST PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 6.25V
VPP = 12.75V
X=0
PROGRAM ONE 25~100us PULSE
INCREMENT X
INTERACTIVE
SECTION
YES
X = 25?
NO
FAIL
VERIFY BYTE
?
PASS
NO
LAST ADDRESS
INCREMENT ADDRESS
FAIL
YES
VCC = VPP = 5.25V
VERIFY SECTION
VERIFY ALL BYTES
?
FAIL
DEVICE FAILED
PASS
DEVICE PASSED
P/N: PM0454
Patent#: US#5,526,307
5
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
FIGURE 3. ERASING MODE FLOW CHART
START
X=0
PROGRAM ALL "0"
A9 = 12.75V
VCC = 5V
VPP = 12.75V
CHIP ERASE (0.5s)
A9 = VIL or VIH
VCC = 5V
VPP = 12.75V
All Bits Verify
NO
FAIL
ERASE VERIFY ?
INCREMENT X
X = 200 ?
YES
PASS
CHIP ERASE (0.5s)
DEVICE FAILED
DEVICE PASSED
P/N: PM0454
Patent#: US#5,526,307
6
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
SWITCHING TEST CIRCUITS
1.8K ohm
DEVICE
UNDER
+5V
TEST
CL
6.2K ohm
DIODES = IN3064
OR EQUIVALENT
CL = 100 pF including jig capacitance(30pF for 70 ns parts)
SWITCHING TEST WAVEFORMS
3.0V
TEST POINTS
1.5V
1.5V
0V
OUTPUT
INPUT
AC TESTING: (1) Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 10ns.
(2) For MX26C1000A
P/N: PM0454
Patent#: US#5,526,307
7
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
0oC to 70oC
Storage Temperature
-65oC to 125oC
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to VCC + 0.5V
VCC to Ground Potential
-0.5V to 7.0V
A9 & Vpp
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to
change.
DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%
SYMBOL
PARAMETER
MIN.
VOH
Output High Voltage
2.4
VOL
Output Low Voltage
VIH
Input High Voltage
VIL
MAX.
UNIT
CONDITIONS
V
IOH = -0.4mA
0.4
V
IOL = 2.1mA
2.0
VCC + 0.5
V
Input Low Voltage
-0.3
0.8
V
ILI
Input Leakage Current
-10
10
uA
VIN = 0 to 5.5V
ILO
Output Leakage Current
-10
10
uA
VOUT = 0 to 5.5V
ICC3
VCC Power-Down Current
100
uA
CE = VCC ± 0.3V
ICC2
VCC Standby Current
1.5
mA
CE = VIH
ICC1
VCC Active Current
30
mA
CE = VIL, f=5MHz, Iout = 0mA
IPP
VPP Supply Current Read
100
uA
CE = OE = VIL, VPP = 5.5V
CAPACITANCE TA = 25oC, f = 1.0 MHz (Sampled only)
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
CONDITIONS
CIN
Input Capacitance
8
8
pF
VIN = 0V
COUT
Output Capacitance
8
12
pF
VOUT = 0V
CVPP
VPP Capacitance
18
25
pF
VPP = 0V
P/N: PM0454
Patent#: US#5,526,307
8
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V± 10%
26C1000A
26C1000A
-70
-90
SYMBOL
PARAMETER
MIN.
tACC
Address to Output Delay
70
tCE
Chip Enable to Output Delay
70
tOE
tDF
Output Enable to Output Delay
OE High to Output Float,
tOH
or CE High to Output Float
Output Hold from Address,
CE or OE which ever occurred firs
0
MAX.
MIN.
35
20
MAX.
0
0
UNIT
CONDITIONS
90
ns
CE = OE = VIL
90
ns
OE = VIL
40
25
ns
ns
CE = VIL
0
ns
26C1000A
26C1000A
26C1000A
-10
-12
-15
SYMBOL
PARAMETER
MIN.
tACC
Address to Output Delay
100
tCE
Chip Enable to Output Delay
100
tOE
tDF
Output Enable to Output Delay
OE High to Output Float,
tOH
or CE High to Output Float
Output Hold from Address,
0
CE or OE which ever occurred first
0
MAX.
45
30
MIN.
0
MAX.
MIN.
MAX.
UNIT
CONDITIONS
120
150
ns
CE = OE = VIL
120
150
ns
OE = VIL
65
50
ns
ns
CE = VIL
50
35
0
0
0
ns
DC PROGRAMMING CHARACTERISTICS TA = 25oC ± 5°C
SYMBOL
PARAMETER
MIN.
VOH
Output High Voltage
2.4
VOL
Output Low Voltage
VIH
Input High Voltage
VIL
MAX.
UNIT
CONDITIONS
V
IOH = -0.40mA
0.4
V
IOL = 2.1mA
2.0
VCC + 0.5
V
Input Low Voltage
-0.3
0.8
V
ILI
Input Leakage Current
-10
10
uA
VH
A9 Auto Select Voltage
11.5
12.5
V
ICC3
VCC Supply Current (Program/Erase & Verify)
50
mA
IPP2
VPP Supply Current(Program)/Erase
50
mA
VIN = 0 to 5.5V
CE = PGM = VIL,
OE = VIH
VCC2
Programming & Erase Supply Voltage
4.5
6.5
V
VPP2
Programming & Erase Voltage
12.5
13.0
V
IPP A9
A9 Auto Select Current /Erase
1
mA
CE = PGM = VIL,
OE = VIH
P/N: PM0454
Patent#: US#5,526,307
9
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
AC PROGRAMMING CHARACTERISTICS TA = 25oC ± 5oC
SYMBOL
PARAMETER
MIN.
MAX.
tAS
Address Setup Time
2.0
us
tOES
OE Setup Time
2.0
us
tDS
Data Setup Time
2.0
us
tAH
Address Hold Time
0
us
tDH
Data Hold Time
2.0
us
tDFP
CE to Output Float Delay
0
tVPS
VPP Setup Time
2.0
tPW
Program Pulse Width
20
tVCS
VCC Setup Time
2.0
tDV
Data Valid from CE
tCES
CE Setup Time
tOE
Data valid from OE
tER
Erase Recovery Time
0.5
s
tPR
Program Recovery Time
2
us
tEW
Erase Pulse Width
0.5
s
tEV
Erase Verify Time
200
ns
tPV
Program Verify Time
200
ns
tA9S
A9 Setup Time
2.0
us
tPVS
Program Verify Setup
2
us
tEVS
Erase Verify Setup
0.5
s
130
UNIT
CONDITIONS
ns
us
105
us
us
250
2.0
ns
us
150
ns
WAVEFORMS
READ CYCLE
ADDRESS
INPUTS
DATA ADDRESS
tACC
CE
tCE
OE
tDF
DATA
OUT
VALID DATA
tOE
P/N: PM0454
Patent#: US#5,526,307
tOH
10
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
PROGRAMMING WAVEFORMS
PROGRAM
ADDRESS
INPUTS
PROGRAM VERIFY
VIH
VALID ADDRESS
VIL
tAS
DATA
OUT
DATA OUT VALID
DATA IN STABLE
tDH
tDS
VPP
VPP
VCC
tVPS
VCC+1
VCC
VCC
tVCS
tPVS
tPV
VIH
CE
VIL
tCES
VIH
PGM
VIL
tPR
tPW
VIH
OE
VIL
ERASE WAVEFORMS
Erase
VPP
ADDRESS
INPUTS
Erase Verify
A9
VIH
Others Not Care
VIL
DATA
OUT
OUT
VPP
VPP
tVPS
VCC
tEVS
VIH
OE
VIL
tEV
VIH
CE
VIL
PGM
VIH
VIL
P/N: PM0454
tER
tCES
Patent#: US#5,526,307
tEW
11
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
OPERATING CURRENT MAX.(mA)
STANDBY CURRENT MAX.(uA)
PACKAGE
MX26C1000APC-70 70
30
100
32 Pin DIP
MX26C1000AMC-70 70
30
100
32 Pin SOP
MX26C1000AQC-70 70
30
100
32 Pin PLCC
MX26C1000ATC-70 70
30
100
32 Pin TSOP
MX26C1000APC-90 90
30
100
32 Pin DIP
MX26C1000AMC-90 90
30
100
32 Pin SOP
MX26C1000AQC-90 90
30
100
32 Pin PLCC
MX26C1000ATC-90 90
30
100
32 Pin TSOP
MX26C1000APC-10 100
30
100
32 Pin DIP
MX26C1000AMC-10 100
30
100
32 Pin SOP
MX26C1000AQC-10 100
30
100
32 Pin PLCC
MX26C1000ATC-10 100
30
100
32 Pin TSOP
MX26C1000APC-12 120
30
100
32 Pin DIP
MX26C1000AMC-12 120
30
100
32 Pin SOP
MX26C1000AQC-12 120
30
100
32 Pin PLCC
MX26C1000ATC-12 120
30
100
32 Pin TSOP
MX26C1000APC-15 150
30
100
32 Pin DIP
MX26C1000AMC-15 150
30
100
32 Pin SOP
MX26C1000AQC-15 150
30
100
32 Pin PLCC
MX26C1000ATC-15 150
30
100
32 Pin TSOP
P/N: PM0454
ACCESS TIME(ns)
Patent#: US#5,526,307
12
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
PACKAGE INFORMATION
32-PIN PLASTIC DIP(600 mil)
ITEM
MILLIMETERS
INCHES
A
42.13 max.
1.660 max.
B
1.90 [REF]
.075 [REF]
C
2.54 [TP]
.100 [TP]
D
.46 [Typ.]
.018 [Typ.]
E
38.07
1.500
F
1.27 [Typ.]
.050 [Typ.]
G
3.30 ± .25
.130 ± .010
H
.51 [REF]
.020 [REF]
I
3.94 ± .25
.155 ± .010
J
5.33 max.
.210 max.
K
15.22 ± .25
.600 ± .010
L
13.97 ± .25
.550 ± .010
M
.25 [Typ.]
.010 [Typ.]
NOTE:
32
17
1
16
A
K
L
F
D
Each lead centerline is located within .25
mm[.01 inch] of its true position [TP] at
maximum material condition.
C
I
J
H
G
0~15¡
M
B
E
32-PIN PLASTIC LEADED CHIP CARRIER (PLCC)
A
ITEM
MILLIMETERS
INCHES
A
12.44 ± .13
.490 ± .005
B
11.50 ± .13
.453 ± .005
C
14.04 ± .13
.553 ± .005
D
14.98 ± .13
.590 ± .005
E
1.93
.076
F
3.30 ± .25
.130 ± .010
G
2.03 ± .13
.080 ± .005
H
.51 ± .13
.020 ± .005
I
1.27 [Typ.]
.050 [Typ.]
J
.71[REF]
.028[REF]
K
L
.46 [REF]
10.40/12.94
(W) (L)
.018 [REF]
.410/.510
(W) (L)
M
.89 R
.035 R
N
.25 (TYP.)
.010 (TYP.)
NOTE:
B
1
4
32
30
5
29
9
25
13
C
D
21
14
20
17
E
F
G
Each lead centerline is located within .25
mm[.01 inch] of its true position [TP] at
maximum material condition.
N
H
M
I
J
K
L
P/N: PM0454
Patent#: US#5,526,307
13
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
PACKAGE INFORMATION
32-PIN PLASTIC TSOP
ITEM
MILLIMETERS
A
20.0 ± .20
INCHES
.078 ± .006
B
18.40 ± .10
.724 ± .004
C
8.20 max.
.323 max.
D
0.15 [Typ.]
.006 [Typ.]
E
.80 [Typ.]
.031 [Typ.]
F
.20 ± .10
.008 ± .004
G
.30 ± .10
.012 ± .004
H
.50 [Typ.]
.020 [Typ.]
I
.45 max.
.018 max.
J
0 ~ .20
0 ~ .008
K
1.00 ± .10
.039 ± .004
L
1.27 max.
.050 max.
M
.50
.020
N
19.00
.748
O
0~5
.500
NOTE:
A
B
C
O
N
M
K
L
D
E
F
H
G
I
J
Each lead centerline is located within .25
mm[.01 inch] of its true position [TP] at a
maximum material condition.
32-PIN PLASTIC SOP (450 mil)
ITEM
MILLIMETERS
INCHES
A
20.95 max.
.825 max.
B
1.00 [REF]
.039 [REF]
C
1.27 [TP]
.050 [TP]
D
.40 [Typ.]
.016 [Typ.]
E
.05 min.
.002 min.
F
3.05 max.
.120 max.
G
2.69 ± .13
.106 ± .005
H
14.12 ± .25
.556 ± .010
I
11.30 ± .13
.445 ± .005
J
1.42
.056
K
.20 [Typ.]
.008 [Typ.]
L
.79
.031
NOTE:
P/N: PM0454
Each lead centerline is located within .25
mm[.01 inch] of its true position [TP] at
maximum material condition.
Patent#: US#5,526,307
32
17
1
16
H
A
I
G
J
F
K
E
D
C
14
B
L
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
Revision History
Revision #
1.1
1.2
`
1.3
1.4
1.5
Description
Eraseing mode flow chart: Chip erase(5s)---> (1s).
Programming waveforms: CE changed.
MTP ROM----> MTP EPROM
Chip erase(1s)---->0.5s. X = 60?--->200?
Switching Test Waveforms revise.
tEW Erase Pulse Width 1 sec---> 0.5sec
Programming/erase waveforms modifiction.
VPP: from 12.0~13V to 12.5~13V.
Erase Verify Time: 60---->200.
Change Part Name: 26C1000 ---> 26C1000A
Change tPW:Min. 95us --> Min. 20us
Programming flow chart revised.
Date
4/10/1997
5/30/1997
7/25/1997
11/05/1997
2/10/1998
Mode Select Table, Erase Mode A9=VH-->A9=VPP.
Erase flow chart revised.
P/N: PM0454
Patent#: US#5,526,307
15
REV.1.5, FEB 10, 1998
INDEX
MX26C1000A
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-8888
FAX:+886-3-578-8887
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TEL:+32-2-456-8020
FAX:+32-2-456-8021
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FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the rignt to change product and specifications without notice.
16
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