eupec FZ1200R33KL2 Hochstzulassige werte / maximum rated value Datasheet

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
vorläufiges Datenblatt
preliminary datasheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T j = 25°C
T j = -25°C
VCES
3300
3300
V
Kollektor-Dauergleichstrom
DC-collector current
T C = 80°C
T C = 25 °C
IC,nom.
1200
A
IC
2300
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, T C = 80°C
ICRM
2400
A
Gesamt-Verlustleistung
total power dissipation
T C=25°C, Transistor
Ptot
14,7
kW
VGES
+/- 20V
V
IF
1200
A
IFRM
2400
A
I2t
440.000
A2s
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, T Vj = 125°C
Spitzenverlustleistung der Diode
maximum power dissipation diode
T j = 125°C
PRQM
1.500
kW
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD £ 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
3,00
3,65
V
-
3,70
4,45
V
VGE(th)
4,2
5,1
6,0
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 1200A, VGE = 15V, Tvj = 25°C
VCE sat
IC = 1200A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 120 mA, VCE = VGE, T vj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
145
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cres
-
8
-
nF
Gateladung
gate charge
VGE = -15V ... + 15V, VCE = 1800V
QG
-
22
-
µC
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 3300V, VGE = 0V, Tvj = 25°C
ICES
-
-
5
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: J. Biermann
date of publication : 2002-04-23
approved by: Christoh Lübke; 2002-04-30
revision: 3
1 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
vorläufiges Datenblatt
preliminary datasheet
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C
Anstiegszeit (induktive Last)
rise time (inductive load)
IC = 1200 A, VCC = 1800V
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
IC = 1200 A, VCC = 1800V
td,on
VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C
tr
VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C
VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C
td,off
VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C
VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C
700
ns
700
ns
-
450
ns
-
450
ns
-
2500
-
ns
-
2700
-
ns
tf
-
220
-
ns
-
330
-
ns
Eon
-
2700
-
mWs
Eoff
-
1590
-
mWs
ISC
-
5200
-
A
LsCE
-
10
-
nH
RCC'+EE'
-
0,12
-
mW
min.
typ.
max.
-
2,60
3,35
V
-
2,45
3,30
V
-
1180
-
A
-
1300
-
A
-
650
-
µAs
-
1200
-
µAs
-
430
-
mWs
-
1150
-
mWs
IC = 1200 A, VCC = 1800V, VGE = 15V
RG = 1,2W, CGE = 330nF, T vj = 125°C, LS = 40nH
IC = 1200 A, VCC = 1800V, VGE = 15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
RG = 2,7W, CGE = 330nF, T vj = 125°C, LS = 40nH
Kurzschlußverhalten
SC Data
T Vj£125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt
tP £ 10µsec, VGE £ 15V
Modulinduktivität
stray inductance module
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
-
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
max.
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
typ.
T = 25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 1200 A, VGE = 0V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
IF = 1200 A, - diF/dt = 4900 A/µsec
VF
IF = 1200 A, VGE = 0V, Tvj = 125°C
VR = 1800V, VGE = -10V, Tvj = 25°C
IRM
VR = 1800V, VGE = -10V, Tvj = 125°C
Sperrverzögerungsladung
recovered charge
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
Qr
VR = 1800V, VGE = -10V, Tvj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
2 (9)
Erec
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
vorläufiges Datenblatt
preliminary datasheet
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,0085
K/W
-
-
0,0170
K/W
RthCK
-
0,006
-
K/W
T vj
-
-
150
°C
Betriebstemperatur
operation temperature
T vj op
-40
-
125
°C
Lagertemperatur
storage temperature
T stg
-40
-
125
°C
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
lPaste = 1 W/m*K / lgrease = 1 W/m*K
RthJC
Diode/Diode, DC
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Material Modulgrundplatte
material of module baseplate
AlSiC
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
32,2
mm
Luftstrecke
clearance
19,1
mm
CTI
comperative tracking index
> 400
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
terminals M4
M1
5
Nm
M2
2
Nm
8 .. 10
Nm
1500
g
terminals M8
Gewicht
weight
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorläufiges Datenblatt
preliminary datasheet
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
VGE = 15V
2400
T = 25°C
2000
T = 125°C
IC [A]
1600
1200
800
400
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
6,0
6,5
7,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
Tvj = 125°C
2400
2000
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
IC [A]
1600
VGE = 15V
VGE = 20V
1200
800
400
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
VCE [V]
4 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorläufiges Datenblatt
preliminary datasheet
IC = f (VGE)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
VCE = 20V
2400
T = 25°C
2000
T = 125°C
IC [A]
1600
1200
800
400
0
5
6
7
8
9
10
11
12
13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
IF = f (VF)
2400
Tj = 25°C
Tj = 125°C
2000
IF [A]
1600
1200
800
400
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VF [V]
5 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorläufiges Datenblatt
preliminary datasheet
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
RGom = 1,2 W, RGoff = 2,7 W, CGE = 330 nF, VCE = 1800V, Tj = 125°C
8000
Eon
7000
Eoff
Erec
E [mJ]
6000
5000
4000
3000
2000
1000
0
0
300
600
900
1200
1500
1800
2100
2400
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 1200 A , CGE = 330 nF, VCE = 1800V , Tj = 125°C
14000
Eon
12000
Eoff
Erec
E [mJ]
10000
8000
6000
4000
2000
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RG [W]
6 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorläufiges Datenblatt
preliminary datasheet
Sicherer Arbeitsbereich IGBT (RBSOA)
Reverse bias safe operation area IGBT (RBSOA)
RG,off = 2,7W, CGE = 330 nF
Tvj= 125°C
3000
2400
IC [A]
1800
1200
IC,Modul
IC,Chip
600
0
0
500
1000
1500
2000
2500
3000
3500
VCE [V]
Sicherer Arbeitsbereich Diode (SOA)
safe operation area Diode (SOA)
Tvj= 125°C
3000
2400
IR [A]
1800
1200
600
0
0
500
1000
1500
2000
2500
3000
3500
VR [V]
7 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorläufiges Datenblatt
preliminary datasheet
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
0,1
Zth:IGBT
Zth:Diode
ZthJC
[K / W]
0,01
0,001
0,0001
0,001
0,01
0,1
1
10
t [sec]
i
ri [K/kW] : IGBT
ti [sec] : IGBT
ri [K/kW] : Diode
ti [sec]
: Diode
1
2
3
4
1,56
4,25
1,26
1,44
0,0068
0,0642
0,3209
2,0212
3,11
8,49
2,52
2,88
0,0068
0,0642
0,3209
2,0212
8 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
vorläufiges Datenblatt
preliminary datasheet
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
9 (9)
FZ1200R33KL2_V Rev3.xls
Similar pages