IPS70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor IPAKSL CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. tab Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.9 Ω Qg,typ 6.8 nC ID,pulse 12.8 A Eoss @ 400V 0.9 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package IPS70R900P7S PG-TO 251-3 Final Data Sheet Marking 70S900P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.0 3.5 A TC = 20°C TC = 100°C - 12.8 A TC=25°C - - 3.6 A measured with standard leakage inductance of transformer of 5µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 30.5 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 4.1 A TC=25°C IS,pulse - - 12.8 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction Values Min. Typ. Max. RthJC - - 4.1 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6 mm (0.063 in.) from case for 10s 1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.06mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 0.74 1.53 0.90 - Ω VGS=10V,ID=1.1A,Tj=25°C VGS=10V,ID=1.1A,Tj=150°C Gate resistance RG - 1.6 - Ω f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 211 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 13 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 177 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Rise time tr - 4.7 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Fall time tf - 31 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.9 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate to drain charge Qgd - 2.6 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate charge total Qg - 6.8 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.4A,Tj=25°C 160 - ns VR=400V,IF=0.9A,diF/dt=50A/µs - 0.5 - µC VR=400V,IF=0.9A,diF/dt=50A/µs - 7 - A VR=400V,IF=0.9A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 40 35 1 µs 101 10 µs 30 100 µs 100 1 ms ID[A] Ptot[W] 25 20 10 ms 10-1 15 DC 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 µs 10 µs 0.5 100 µs ZthJC[K/W] 100 ID[A] 1 ms 10 ms 10-1 0.2 100 0.1 0.05 0.02 DC 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 14 10 20 V 10 V 8V 20 V 10 V 8V 9 12 7V 10 8 7V 7 6V 6V 5.5 V 6 ID[A] ID[A] 8 6 5.5 V 5 4 5V 3 4 5V 4.5 V 2 2 0 4.5 V 0 5 10 15 1 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 6 2.00 1.80 5 5V 5.5 V 6.5 V 6V 1.60 1.40 4 98% RDS(on)[Ω] RDS(on)[Ω] 1.20 3 7V 10 V 2 1.00 typ 0.80 0.60 0.40 1 0.20 0 0 5 10 15 0.00 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.1A;VGS=10V 7 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 14 10 9 25 °C 12 8 10 7 120 V 6 VGS[V] ID[A] 8 150 °C 6 400 V 5 4 3 4 2 2 1 0 0 2 4 6 8 10 0 12 0 2 4 VGS[V] 6 8 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 °C 125 °C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0.0 0.5 1.0 1.5 2.0 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 2.00 1.80 103 1.60 1.40 Ciss 102 C[pF] Eoss[µJ] 1.20 101 1.00 0.80 Coss 0.60 Crss 100 0.40 0.20 10-1 0 100 200 300 400 500 0.00 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 6PackageOutlines DOCUMENT NO. Z8B00181052 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.20 2.40 0.90 1.14 0.64 0.89 0.65 1.15 5.20 5.50 0.46 0.60 0.46 0.60 5.98 6.22 5.00 5.60 6.35 6.73 4.63 5.21 2.29 4.57 3 3.30 3.60 0.85 1.25 0.88 1.28 INCHES MIN 0.087 0.035 0.025 0.026 0.205 0.018 0.018 0.235 0.197 0.250 0.182 MAX 0.094 0.045 0.035 0.045 0.217 0.024 0.024 0.245 0.220 0.265 0.205 0.090 0.180 3 0.130 0.033 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 06-04-2016 0.142 0.049 0.050 REVISION 01 Figure1OutlinePG-TO251-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSªP7Webpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPS70R900P7S RevisionHistory IPS70R900P7S Revision:2018-02-13,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-11-24 Release of final version 2.1 2018-02-13 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-13