Fairchild BS270 N-channel enhancement mode field effect transistor Datasheet

April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
T A = 25°C unless otherwise noted
BS270
Units
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50µs)
ID
Drain Current - Continuous
PD
Maximum Power Dissipation
- Pulsed
Derate Above 25°C
±40
400
mA
2000
625
mW
5
mW/°C
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
200
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistacne, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
BS270.SAM
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
TJ = 125oC
1
µA
500
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
10
nA
IGSSF
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-10
nA
2.5
V
1.2
2
Ω
2
3.5
VGS = 4.5 V, ID = 75 mA
1.8
3
VGS = 10 V, ID = 500 mA
0.6
1
0.14
0.225
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 500 mA
1
TJ = 125oC
VDS(ON)
Drain-Source On-Voltage
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, VDS > 2 VDS(on)
2000
2.1
2700
VGS = 4.5 V, VDS > 2 VDS(on)
400
600
VDS > 2 VDS(on), ID = 200 mA
100
320
V
mA
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
20
50
pF
11
25
pF
4
5
pF
10
ns
10
ns
400
mA
2000
mA
1.2
V
SWITCHING CHARACTERISTICS (Note 1)
ton
Turn-On Time
toff
Turn-Off Time
VDD = 30 V, ID = 500 m A,
VGS = 10 V, RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 400 mA (Note 1)
0.88
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS270.SAM
Typical Electrical Characteristics
2
3
9.0
V GS =4.0V
8.0
, DRAIN-SOURCE CURRENT (A)
7.0
RDS(on) , NORMALIZED
1.5
6.0
1
5.0
0.5
I
D
4.0
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5.0
6 .0
2
7.0
8.0
1.5
9.0
10
1
0.5
5
0
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
3
1.75
V GS = 10V
R DS(on) , NORMALIZED
ID = 500mA
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.4
Figure 1. On-Region Characteristics.
V G S = 10V
2.5
TJ = 125°C
2
1.5
25°C
1
-55°C
0.5
0
150
0
Figure 3. On-Resistance Variation
with Temperature.
0.4
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
VDS = 10V
T J = -55°C
25°C
125°C
Vth , NORMALIZED
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
GATE-SOURCE THRESHOLD VOLTAGE
2
ID , DRAIN CURRENT (A)
4.5
2.5
V DS = VGS
I D = 1 mA
1.05
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature.
BS270.SAM
Typical Electrical Characteristics (continued)
2
ID = 10µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0.5
TJ = 125°C
0.1
25°C
0.05
-55°C
0.01
0.005
0.001
0.2
150
0.4
0.6
V SD
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 7. Breakdown Voltage Variation
with Temperature.
10
60
40
V GS , GATE-SOURCE VOLTAGE (V)
20
C oss
10
5
C rss
f = 1 MHz
V GS = 0V
2
V DS = 25V
ID = 5 0 0 m A
C iss
CAPACITANCE (pF)
V GS = 0V
1
1.075
IS , REVERSE DRAIN CURRENT (A)
, NORMALIZED
DSS
BV
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1
8
6
4
2
0
1
2
3
V DS
5
10
20
30
50
0
0.4
0.8
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t on
t d(on)
R GEN
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
Figure 11. Switching Test Circuit.
2
t off
tr
RL
D
VGS
1.6
Figure 10. Gate Charge Characteristics.
VDD
V IN
1.2
Q g , GATE CHARGE (nC)
Inverted
50%
50%
10%
Pulse Width
Figure 12. Switching Waveforms.
BS270.SAM
Typical Electrical Characteristics (continued)
3
2
I D , DRAIN CURRENT (A)
1
RD
S(
ON
im
)L
10
it
1m
0.5
0u
s
s
10
ms
10
0m
s
1s
0.1
10
s
DC
0.05
V GS = 10V
SINGLE PULSE
T A = 25°C
0.01
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60 80
Figure 13. Maximum Safe Operating
Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.1
R θJA (t) = r(t) * R θJA
0.2
0.2
R
θJA = (See Datasheet)
0.1
P(pk)
0.05
0.05
t1
0.02
0.02
0.01
0.0001
Single Pulse
0.001
t2
TJ - T A = P * Rθ
JA (t)
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 14. Transient Thermal Response Curve.
BS270.SAM
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P
Pd
b
Ha
W1
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L
H1 HO
L1
S
WO
t
W2
W
t1
P1 F1
DO
P2
PO
User Direction of Feed
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ITEM DESCRIPTION
SYMBOL
DIMENSION
Base of Package to Lead Bend
b
0.098 (max)
Component Height
Ha
0.928 (+/- 0.025)
Lead Clinch Height
HO
0.630 (+/- 0.020)
Component Base Height
H1
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Component Alignment ( side/side )
Pd
0.040 (max)
Component Alignment ( front/back )
Hd
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P
0.500 (+/- 0.020)
Feed Hole Pitch
PO
0.500 (+/- 0.008)
Hole Center to First Lead
P1
0.150 (+0.009, -0.010)
Hole Center to Component Center
P2
0.247 (+/- 0.007)
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F1/F2
0.104 (+/- 0 .010)
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0.018 (+0.002, -0.003)
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0.360 (+/- 0.025)
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3.100
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2.700
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1.630
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