Fuji ESAD83M-006RR Schottky barrier diode Datasheet

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ESAD83M-006RR
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
60
V
Isolating voltage
Viso
Terminals-to-Case, AC.1min
1500
V
Io
50Hz Square wave duty =1/2
Tc = 106˚C
30 *
A
Sine wave, 10ms 1shot
120
A
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
IFSM
Tj
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics
Item
(at Ta=25˚C unless otherwise specified.)
Symbols
Forward voltage***
VF
IF = 12.5 A
0.58
V
Reverse current***
IR
VR =VRRM
20
mA
Thermal resistance
Rth(j-c)
Junction to case
1.7
˚C/W
Conditions
Maximum
Units
Recommended torque
0.4 to 0.6
N•m
-
6
g
Note*** Rating per element
Mechanical characteristics
Item
Mounting torque
Approximate mass
1
ESAD83M-006RR
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
006
006
2
ESAD83M-006RR
FUJI Diode
http://www.fujisemi.com
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
100
Tj=150℃
102
Tj=125℃
Reverse Current(mA)
Tj=150℃
Tj=125℃
Tj=100℃
Tj=25℃
IR
1
IF
Forward Current(A)
10
101
Tj=100℃
100
Tj=25℃
10-1
0.1
10-2
0.01
0.0
10-3
0.1
0.2
0.3
VF
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
10
20
Forward Voltage(V)
Forward Power Dissipation
30
VR
(max.)
40
50
60
70
Reverse Voltage(V)
Reverse Power Dissipation (max.)
22
14
DC
13
360°
20
360°
12
11
Dissipation(W)
16
14
Square wave λ=60°
12
Power
Square wave λ=120°
Sine wave λ=180°
10
Reverse
Square wave λ=180°
DC
8
6
PR
Forward Power Dissipation (W)
λ
WF
VR
I0
18
α
10
9
8
7
α=180°
6
5
4
3
4
2
2
1
Per 1element
0
0
0
2
4
Io
6
8
10
12
14
16
0
Average Output Current(A)
5
10
15
20
VR
3
25
30
35
40
45
50
Reverse Voltage (V)
55
60
65
ESAD83M-006RR
FUJI Diode
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Current Derating
Junction Capacitance Characteristic (typ.)
(Io-Tc) (max.)
10000
160
155
150
145
140
135
DC
120
115
110
Sine wave λ=180°
105
Square wave λ=180°
100
Square wave λ=120°
Tc
95
1000
Cj
Case Temperature(℃)
125
Junction Capacitance (pF)
130
90
85
80
360°
75
I0
70
VR=30V
λ
65
Square wave λ=60°
60
0
5
10
Io
15
20
25
30
35
40
100
45
1
Average Output Current(A)
Surge Capability (max.)
100
IFSM
Peak Half - Wave Current(A)
1000
10
1
10
VR
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
10
Number of Cycles at 50Hz
4
Reverse Voltage (V)
100
ESAD83M-006RR
FUJI Diode
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Transient Thermal Impedance (max.)
1
Transient Thermal Impedance (℃/W)
10
Rth j-c: 1.7 ℃/W
0
10
-1
10
-3
10
-2
10
-1
0
10
10
t
Time
5
(sec)
1
10
2
10
ESAD83M-006RR
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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may arise from the use of the applications described herein.
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