Fairchild FDR4420A Single n-channel, logic level, powertrench mosfet Datasheet

June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V,
RDS(ON) = 0.013 Ω @ VGS = 4.5 V.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
Fast switching speed.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
D
S
D
S
44
20
A
pin 1
SuperSOT TM-8
D
Absolute Maximum Ratings
Symbol
SuperSOTTM-8
SuperSOTTM-6
SOT-23
D
D
G
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
SO-8
SOT-223
SOIC-16
5
4
6
3
7
2
8
1
TA = 25oC unless otherwise noted
Parameter
FDR4420A
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Draint Current - Continuous
(Note 1a)
11
A
PD
Maximum Power Dissipation
(Note 1a)
1.8
(Note 1b)
1
- Pulsed
40
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
W
0.9
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
© 1998 Fairchild Semiconductor Corporation
FDR4420 Rev.D
Electrical Characteristics
Symbol
(TA = 25OC unless otherwise noted )
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 o C
30
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
V
1
µA
10
µA
VGS = 20 V, VDS= 0 V
100
nA
VGS = -20 V, VDS= 0 V
-100
nA
TJ = 55°C
IGSS
Gate - Body Leakage Current
IGSS
Gate - Body Leakage, Reverse
mV /oC
20
ON CHARACTERISTICS (Note 2)
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp.Coefficient
ID = 250 µA, Referenced to 25 o C
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 11A
1
TJ =125°C
VGS = 4.5 V, ID = 9 A
ID(ON)
On-State Drain Current
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V, ID= 11 A
mV /oC
-6
1.4
3
V
0.0075
0.009
Ω
0.0125
0.016
0.01
0.013
30
A
25
S
2560
pF
560
pF
280
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 10V, RGEN = 1 Ω
VDS = 15 V, ID = 9.3 A,
VGS = 5 V
11
20
ns
15
27
ns
25
40
ns
21
34
ns
23
33
nC
7
nC
11
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.5 A
(Note 2)
0.7
1.5
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design
while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 board in still air.
a. 70OC/W on a 1 in2 pad of 2oz
copper.
b. 125OC/W on a 0.026 in2 of pad
of 2oz copper.
c. 135OC/W on a 0.005 in2 of pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR4420 Rev.D
Typical Electrical Characteristics
VGS =10V
3
4.0V
3.5V
6 0V
24
R DS(ON) , NORMALIZED
32 4.5V
3.0V
16
8
2.5V
0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
40
25
2
3.5
0.4
08
1.2
1.6
40
15
4.5
5.0
6.0
10
1
05
0
VGS = 3.0V
2
0
8
16
24
32
40
I D , DRA N CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0 04
16
V GS =10V
R DS(ON) ,(OHM)
1.4
12
1
08
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
ID = 11A
06
-50
I D = 5.5A
0 035
0 03
0 025
0 02
0 015
T A = 125 o C
0 01
25 o C
0 005
Figure 3. On-Resistance Variation
2
4
6
8
VGS ,GATE-SOURCE VOLTAGE (V)
40
IS , REVERSE DRA N CURRENT (A)
50
TJ = -55°C
VDS = 10V
25°C
125°C
40
10
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
with Temperature.
I D , DRAIN CURRENT (A)
R DS(ON) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
18
30
20
10
VGS =0V
5
TJ = 125°C
1
25°C
0.1
-55°C
0 01
0 001
0 0001
0
1
15
V
GS
2
25
3
3.5
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
02
0.4
06
08
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR4420 Rev.D
Typical Electrical Characteristics (continued)
5000
VDS = 5V
I D = 11A
10V
8
3000
15V
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
10
6
4
C iss
2000
1000
C oss
500
f = 1 MHz
V GS = 0V
2
0
200
0.1
0
10
20
30
40
50
C rss
0.3
60
1
3
10
30
VDS , DRA N TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
(O
LI
N)
MIT
100
us
1m
s
10m
s
100
ms
1s
10
s
DC
5
1
0.3
VGS = 10V
SINGLE PULSE
R θJA = 135°C/W
TA = 25°C
0.1
0.03
0.01
0.1
02
0.5
SINGLE PULSE
R θJA= 135°C/W
TA = 25°C
40
POWER (W)
20 RDS
30
20
10
1
2
5
10
30
0
0.0001
50
0.001
0.01
0.1
1
10
100 300
S NGLE PULSE TIME (SEC)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANS ENT THERMAL RESISTANCE
I D , DRA N CURRENT (A)
100
05
D = 0.5
RθJA (t) = r(t) * RθJA
R θJA = 135°C/W
03
02
0.1
0.2
0.1
P(pk)
0.05
t1
0 05
0 03
0 02
0 01
0 0001
0.02
Single Pulse
0 001
t2
TJ - TA = P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
0.01
0.01
0.1
1
10
100
300
t 1, TIME (sec)
Figure 11.Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDR4420 Rev.D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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