ASI AUR300 Npn silicon rf power transistor Datasheet

AUR300
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The AUR 300 is Designed for
PACKAGE STYLE .400 BAL FLG (A)
A
B
FEATURES:
FULL R
4X.060 R
• Input Matching Network
•
• Omnigold™ Metalization System
C
E
P
D
F
H
K
J
G
I
N
MAXIMUM RATINGS
L M
21.6 A
IC
65 V
VCBO
VCES
65 V
VEBO
3.5 V
PDISS
875 W @ TC = 25 OC
-65 OC to +200 OC
TJ
O
O
TSTG
-65 C to +150 C
θ JC
0.20 OC/W
CHARACTERISTICS
SYMBOL
DIM
MINIMUM
inches / mm
inches / mm
A
.210 / 5.33
.230 / 5.84
B
.045 / 1.14
.055 / 1.40
C
.125 / 3.18
.135 / 3.43
D
.380 / 9.65
.390 / 9.91
E
.770 / 19.56
.830 / 21.08
F
.070 / 1.78
.080 / 2.03
G
.215 / 5.46
.235 / 5.97
H
.420 / 10.67
.430 / 10.92
MAXIMUM
I
.645 / 16.38
.655 / 16.64
J
.895 / 22.73
.905 / 22.99
K
.002 / 0.05
.006 / 0.15
L
.058 / 1.47
.065 / 1.65
M
.115 / 2.92
.130 / 3.30
.395 / 10.03
.405 / 10.29
.230 / 5.84
N
P
ORDER CODE: ASI10549
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 50 mA
65
V
BVCEO
IC = 50 mA
28
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 30 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 40 V
IC = 5.0 A
POUT = 300 W
10
f = 425 MHz
7.5
mA
100
---
9.5
dB
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Similar pages