IXYS IXA12IF1200PB Easy paralleling due to the positive temperature coefficient of the on-state voltage Datasheet

IXA12IF1200PB
preliminary
XPT IGBT
VCES
=
1200 V
I C25
=
20 A
VCE(sat) =
1.8 V
Copack
Part number
IXA12IF1200PB
Backside: collector
2 (C)
(G) 1
3 (E)
Features / Advantages:
Applications:
Package: TO-220
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
IXA12IF1200PB
preliminary
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
25°C
TC = 25°C
I C100
V
6.5
V
0.1
mA
I C = 0.3 mA; VGE = VCE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
1.8
TVJ = 125 °C
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
600 V; IC =
5.4
5.9
10 A
TVJ = 125 °C
10 A
VGE = ±15 V; R G = 100 Ω
VGE = ±15 V; R G = 100 Ω
short circuit safe operating area
VCEmax = 900 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
R G = 100 Ω; non-repetitive
I SC
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
nA
27
nC
70
ns
40
ns
250
ns
100
ns
1.1
mJ
1.1
mJ
TVJ = 125 °C
VCEmax = 1200 V
SCSOA
short circuit current
mA
0.1
500
inductive load
VCE =
V
2.1
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC =
A
2.1
gate emitter threshold voltage
VGE = ±20 V
V
20
A
VGE(th)
total gate charge
±30
W
IC =
gate emitter leakage current
V
13
collector emitter saturation voltage
Q G(on)
±20
85
VCE(sat)
I GES
Unit
V
TC = 25°C
total power dissipation
10 A; VGE = 15 V
max.
1200
TC = 100 °C
Ptot
I CM
typ.
TVJ = 125 °C
30
A
10
µs
A
40
1.5 K/W
K/W
0.50
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
22
A
TC = 100 °C
14
A
TVJ = 25°C
2.20
V
*
mA
I F 100
10 A
VF
forward voltage
IF =
IR
reverse current
VR = VRRM
TVJ = 125°C
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
TVJ = 25°C
*
mA
1.3
µC
10.5
A
TVJ = 125°C
VR = 600 V
-di F /dt = -250 A/µs
IF =
10 A; VGE = 0 V
TVJ = 125°C
V
1.95
350
ns
0.35
mJ
1.8 K/W
0.50
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20110330a
IXA12IF1200PB
preliminary
Package
Ratings
TO-220
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
35
Unit
A
-40
150
°C
-40
125
°C
150
°C
Weight
2
MD
mounting torque
FC
mounting force with clip
Product Marking
Part Number
0.4
0.6
Nm
20
60
N
Part number
I
X
A
12
IF
1200
PB
XXXXXX
Logo
Assembly Line
Lot #
g
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
TO-220AB (3)
Zyyww
abcdef
Date Code
Ordering
Standard
Part Number
IXA12IF1200PB
Similar Part
IXA12IF1200HB
IXA12IF1200TC
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
IXA12IF1200PB
Package
TO-247AD (3)
TO-268AA (D3Pak) (2)
Delivery Mode
Tube
T VJ = 150 °C
* on die level
IGBT
Diode
threshold voltage
1.1
1.25
R 0 max
slope resistance *
153
85
© 2011 IXYS all rights reserved
Code No.
507428
Voltage class
1200
1200
V 0 max
IXYS reserves the right to change limits, conditions and dimensions.
Quantity
50
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
IXA12IF1200PB
preliminary
Outlines TO-220
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170
0.045
0.090
0.190
0.055
0.110
b
b2
0.64
1.15
1.01
1.65
0.025
0.045
0.040
0.065
C
D
0.35
14.73
0.56
16.00
0.014
0.580
0.022
0.630
E
e
H1
9.91
2.54
5.85
10.66
BSC
6.85
0.390
0.100
0.230
0.420
BSC
0.270
L
L1
12.70
2.79
13.97
5.84
0.500
0.110
0.550
0.230
ØP
Q
3.54
2.54
4.08
3.18
0.139
0.100
0.161
0.125
A
A1
ØP
H1
Q
E
D
4
3
L
3x b2
2
L1
1
3x b
2x e
C
A2
2 (C)
(G) 1
3 (E)
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
IXA12IF1200PB
preliminary
IGBT
20
IC
20
VGE = 15 V
16
16
12
12
IC
TVJ = 25°C
[A]
TVJ = 125°C
8
20
VGE = 15 V
17 V
19 V
13 V
16
11 V
TVJ = 125°C
IC 12
[A] 8
[A] 8
9V
4
4
4
0
0
0
TVJ = 125°C
TVJ = 25°C
0
1
2
3
0
1
2
3
4
5
7
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
3.0
IC = 10 A
VCE = 600 V
15
IC =
10 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
1.6
2.0
E
E
10 11 12 13
Fig. 3 Typ. tranfer characteristics
Eon
VGE
10
9
1.8
RG = 100
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
2.5
8
VGE [V]
Fig. 2 Typ. output characteristics
20
[V]
6
Eoff
1.5
[mJ] 1.0
Eon
1.4
[mJ] 1.2
Eoff
5
1.0
0.5
0
0.0
0
10
20
30
0
8
12
16
IC [A]
QG [nC]
Fig. 4 Typ. turn-on gate charge
4
Fig. 5 Typ. switching energy
vs. collector current
20
0.8
80
120
160
200
240
RG [ ]
Fig. 6 Typ. switching energy
vs. gate resistance
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
IXA12IF1200PB
preliminary
Diode
2.4
20
24
TVJ = 125°C
TVJ = 125°C
VR = 600 V
2.0 20 A
VR = 600 V
15
20 A
20
1.6
IF
Qrr
10
[A]
[μC]
5
IRM
10 A
1.2
0.8
TVJ = 125°C
0.5
1.0
[A]
5A
5A
12
TVJ = 25°C
0
0.0
10 A
16
0.4
1.5
2.0
2.5
0.0
200 250 300 350 400 450 500
3.0
VF [V]
8
200 250 300 350 400 450 500
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 1 Typ. forward current
versus VF
Fig. 2 Typical reverse recov. charge
Qrr versus. diF /dt
500
Fig.3 Typ: peak reverse current
IRR versus diF /dt
0.6
20 A
TVJ = 125°C
TVJ = 125°C
VR = 600 V
0.5
VR = 600 V
20 A
400
10 A
Erec 0.4
trr
300
[ns]
[mJ] 0.3
5A
200
0.2
100
200 250 300 350 400 450 500
diF /dt [A/μs]
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
10 A
Fig. 5 Typ. recovery time
trr versus diF /dt
5A
0.1
200 250 300 350 400 450 500
diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec vs. diF /dt
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
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