DMTH6005LPS Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary Features NEW PRODUCT BVDSS RDS(ON) max 60V 5.5mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Rated to +175C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimizes power losses Low Qg – minimizes switching losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6005LPSQ) Mechanical Data High Frequency Switching Sync. Rectification DCDC Converters Case: POWERDI®5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI®5060-8 Pin1 Bottom View Top View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH6005LPS-13 Notes: Case POWERDI®5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking H6005LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) H6005LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25C TA = +70C TC = +25C (Note 9) TC = +100C Continuous Drain Current (Note 5) NEW PRODUCT Continuous Drain Current (Note 6) Value 60 ±20 20.6 17.2 ID A 100 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current, L=1mH Avalanche Energy, L=1mH Units V V A IS IDM IAS EAS 90 100 160 14.8 98 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 3.2 47 150 1 -55 to +175 Units W °C/W W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25C TC = +25C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 4.4 5.7 7.7 0.9 3 5.5 7.2 10 - V Static Drain-Source On-Resistance 1 - VDS = VGS, ID = 250μA VGS = 10V, ID = 50A VGS = 6V, ID = 20A VGS = 4.5V, ID = 12.5A VGS = 0V, IS = 50A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR - 2962 965.2 59.8 0.66 47.1 23.1 10.2 12.5 8.3 9.4 22 8.9 40.4 - QRR - 49.7 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 30V, ID = 50A ns VDD = 30V, VGS = 10V, ID = 30A, RG = 3.3Ω ns nC IF = 30A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS 50.0 30 VDS = 5V VGS = 4.0V ID, DRAIN CURRENT (A) 40.0 25 VGS = 5.0V VGS = 4.5V 30.0 20.0 VGS = 3.5V 10.0 20 15 10 125oC 85oC 150oC 5 25oC 175oC -55oC VGS = 3.0V 0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1 5 2 0.009 VGS = 4.5V 0.007 0.006 VGS = 6.0V 0.005 0.004 VGS = 10V 0.003 0.002 0.001 0 5 10 15 20 25 30 35 40 45 50 150oC 175oC 0.008 0.007 0.006 125oC 0.005 85oC 0.004 25oC 0.003 -55oC 0.002 0.001 0 10 20 30 40 50 60 70 80 6 0.05 0.04 0.03 ID = 50A 0.02 ID = 20A 0.01 ID = 12.5A 0 0 4 90 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.01 0.009 5 0.06 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V 4 VGS, GATE-SOURCE VOLTAGE (V) 0.01 0.008 3 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ID, DRAIN CURRENT (A) VGS = 10.0V VGS = 6.0V 100 2 1.8 1.6 VGS = 10V, ID = 50A 1.4 1.2 1 VGS = 4.5V, ID = 12.5A 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature Figure 6. On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 3 of 7 www.diodes.com November 2015 © Diodes Incorporated 0.012 VGS = 4.5V, ID = 12.5A 0.01 0.008 0.006 0.004 VGS = 10V, ID = 50A 0.002 0 -50 -25 0 25 50 75 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.014 3.5 3 ID = 1mA 2.5 2 ID = 250µA 1.5 1 0.5 0 100 125 150 175 -50 -25 25 50 75 100 125 150 175 Figure 8. Gate Threshold Variation vs. Junction Temperature 100 10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 90 IS, SOURCE CURRENT (A) 0 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 80 70 60 50 TJ = 85oC TJ = 125oC 40 TJ = 150oC 30 TJ = 25oC TJ = 175oC 20 TJ = -55oC 10 f=1MHz Ciss 1000 Coss 100 Crss 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 1000 RDS(ON) Limited 9 ID, DRAIN CURRENT (A) 8 7 VGS (V) NEW PRODUCT DMTH6005LPS 6 5 4 VDS = 30V, ID = 50A 3 2 PW =100µs PW =10ms TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite PW =100ms Heatsink PW =1s VGS=10V 10 1 0 5 10 15 20 25 30 35 40 45 50 PW =1µs PW =1ms 100 1 0 PW =10µs 0.1 1 10 100 Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.9 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC = 1℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®5060-8 D Detail A D1 0(4X) NEW PRODUCT c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10º 12º 11º θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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